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Researcher profile

E. Tutis

E. Tutis contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-matcond-mat.mtrl-scisupr-concond-mat.othercond-mat.str-el

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Published work

4 published item(s)

preprint2016arXiv

Metallicity and conductivity crossover in white light illuminated CH$_3$NH$_3$PbI$_3$ perovskite

The intrinsic d.c. electrical resistivity ($ρ$) - measurable on single crystals only - is often the quantity first revealing the properties of a given material. In the case of CH$_3$NH$_3$PbI$_3$ perovskite measuring $ρ$ under white light illumination provides insight into the coexistence of extended and shallow localized states (0.1 eV below the conduction band). The former ones dominate the electrical conduction while the latter, coming from neutral defects, serve as a long-lifetime charge carrier reservoir accessible for charge transport by thermal excitation. Remarkably, in the best crystals the electrical resistivity shows a metallic behaviour under illumination up to room temperature, giving a new dimension to the material in basic physical studies.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Diffusion of triplet excitons in an operational Organic Light Emitting Diode

Measurements of the diffusion length L for triplet excitons in small molecular-weight organic semiconductors are commonly carried out using a technique in which a phosphorescent-doped probe layer is set in the vicinity of a supposed exciton generation zone. However, analyses commonly used to retrieve $L$ ignore microcavity effects that may induce a strong modulation of the emitted light as the position of the exciton probe is shifted. The present paper investigates in detail how this technique may be improved to obtain more accurate results for L. The example of 4,4'-bis(carbazol-9-yl)1,1'-biphenyl (CBP) is taken, for which a triplet diffusion length of L=16 +/- 4 nm (at 3 mA/cm2) is inferred from experiments. The influence of triplet-triplet annihilation, responsible for an apparent decrease of L at high current densities, is theoretically investigated, as well as the 'invasiveness' of the thin probe layer on the exciton distribution. The interplay of microcavity effects and direct recombinations is demonstrated experimentally with the archetypal trilayer structure [N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)]-4,4'-diaminobiphenyl (NPB)/CBP/ 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (named bathocuproine, BCP). It is shown that in this device holes do cross the NPB/CBP junction, without the assistance of electrons and despite the high energetic barrier imposed by the shift between the HOMO levels. The use of the variable-thickness doped layer technique in this case is then discussed. Finally, some guidelines are given for improving the measure of the diffusion length of triplet excitons in operational OLEDs, applicable to virtually any small molecular-weight material.

0 citations0 reviewsNo code linkedOpen access
preprint1995arXiv

Raman spectrum and charge fluctuations in the copper-oxide superconductors

The effect of the charge fluctuations on the electronic spectrum and the Raman spectrum of high temperature superconductors is examined within the slave boson approach. Instead of using the saddle point approximation for slave bosons, we confine ourselves to the non-crossing approximation (NCA) in summing the diagrams for the Green functions, thus obtaining the renormalized hole spectrum and its lifetime on equal footing. The electronic Raman spectrum is calculated, showing the characteristic featureless behaviour up to the frequency of the order of renormalized $Δ_{pd}$ parameter. The dependence on the polarization of the incident and the scattered light agrees with experiments.

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preprint1995arXiv

The effect of large $U_d$ on the Raman spectrum in the copper-oxide superconductors

The effect of the charge fluctuations on the electronic and Raman spectrum of high temperature superconductors is examined, using the slave boson approach to the large Coulomb repulsion $U_d$ on the copper site. Instead of the saddle point approximation $\srv{b}\ne 0$ for the slave boson, characteristic for various $N\ide\infty$ approaches, we confine ourselves to the non-crossing approximation (NCA) diagrams for the Green functions. In this way the effects of charge fluctuations and of the constraint of no double occupancy on the copper site on the shape of the electronic spectrum are studied primarily, while the slave boson diagrams responsible for copper-copper spin correlations are intentionally not included. The novel feature of the charge fluctuation dynamics shows up in the slave boson spectrum as the plateau extending over the range of 1eV below $ω=0$. This is further reflected in the electronic Raman spectrum that we calculate for various combinations of the polarization of the incoming and scattered light. The Raman spectrum shows the characteristic featureless behaviour up to frequencies of the order of 1eV while the polarization dependence is also in qualitative agreement with experiment.

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