Researcher profile

S. Bandyopadhyay

S. Bandyopadhyay contributes to research discovery and scholarly infrastructure.

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Published work

13 published item(s)

preprint2021arXiv

Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal

We report bulk Rashba spin splitting (RSS) and associated Dirac surface state in (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$, exhibiting dominant $p$-type conductivity. We argue from the synchrotron diffraction studies that origin of the bulk RSS is due to a structural transition to a non-centrosymmetric $R3m$ phase below $\sim$ 30 K. The Shubnikov-de Haas Van (SdH) oscillations observed in the magnetoresistance curves at low temperature and the Landau level fan diagram, as obtained from these oscillations, confirm the presence of nontrivial Dirac surface state. The magnetization data at low temperature exhibit substantial orbital magnetization consistent with the bulk RSS. The existance of both the bulk RSS and Dirac surface states are confirmed by first principles density functional theory calculations. Coexistence of orbital magnetism, bulk RSS, and Dirac surface state is unique for $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$, making it an ideal candidate for spintronic applications.

preprint2019arXiv

Quantum Pairing Time Orders

We propose the concept of the time-independent correlators for the even- and odd-frequency pairing states that can be defined for both bosonic and fermionic quasiparticles. These correlators explicitly capture the existence of two distinct classes of pairing states and provide a direct probe of the hidden Berezinskii order. This concept is illustrated in the cases of pairings for Majorana fermions and quasiparticles in Dirac semimetals. It is shown that the time-independent correlator is able to effectively capture the energy scale relevant for pairing.

preprint2013arXiv

Correlation between defect and magnetism of Ar9+ implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

Sol-gel derived thin films of Zn0.95Mn0.05O have been implanted with Ar9+ ions with doses viz. 5x10e14 ions/cm2 (low), 1x10e15 ions/cm2 (intermediate) and 1x10e16 ions/cm2 (high). Structural, morphological, optical and magnetic properties of the films have been investigated. Structural study confirmed single phase, wurtzite structure of the films. The absence of impurity phase has been confirmed from several measurements. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit well above room temperature (RT) intrinsic ferromagnetism (FM) as evidenced from field and temperature dependent magnetization measurements. The magnetization attains the maximum value for high dose of Ar9+ ion implanted film. It shows RT saturation magnetization (MS) value of 0.69emu/gm. The observed FM has been correlated with proportion of intrinsic defects, such as, zinc and oxygen vacancies and the values of MS. Defect induced formation of bound magnetic polaron actually controls the FM. The utility of these films in transparent spin electronic device has also been exhibited.

preprint2012arXiv

Modification of structural and magnetic properties of Zn0.96 Mn0.04O samples by Li3+ ion irradiation

Zn0.96Mn0.04O samples were synthesized by solid state reaction technique to explore their magnetic behavior. Structural, morphological and magnetic properties of the samples have been found to be modified by 50 MeV Li+3 ion beam irradiation. The samples exhibit impurity phase and upon irradiation it disappears. Rietveld refinement analysis indicates that substitutional incorporation of Mn in the host lattice increases with irradiation. Grain size decreases with irradiation. Field dependent magnetization (M-H) measurement explicitly indicates ferromagnetic (FM) nature. It has been established from temperature dependent magnetization (M-T) measurement (500 Oe) and ac susceptibility (χ-T) measurement that ferromagnetism in the system seems to be mainly intrinsic; though superparamagnetic Mn nanoparticles also has a minor role. The analysis of M-T data at comparatively high field (5000-Oe) provides an estimation of antiferromagnetic (AFM) exchange, which acts as a reducing agent for observed magnetic moment. The value of saturation magnetization has been increased upon irradiation and is highly correlated with dissolution of impurity phase. Actually structural property has been modified with ion irradiation and this modification may cause some definite positive change in magnetic property.

preprint2011arXiv

An ultrasensitive spintronic strain sensor

We propose a spintronic strain sensor capable of sensing strain with a sensitivity of 1E-13/sqrt{Hz} at room temperature with an active sensing area of 1 cmE2 and power dissipation of 1 watt. This device measures strain by monitoring the change in the spin-polarized current in a parallel array of free standing nanowire spin valves when the array is subjected to compressive or tensile stress along the wires' length. The change in the current is linearly proportional to the strain, which makes the sensor relatively distortion-free. Such a sensor can be fabricated using a variety of techniques involving nanolithography, self assembly and epitaxial growth.

preprint2011arXiv

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn doped ZnO

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state reaction method and have been irradiated with 50 MeV Li3+ ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. XRD result shows single phase wurtzite structure for Zn0.98Mn0.02O, whereas for Zn0.96Mn0.04O sample an impurity phase has been found apart from the usual peaks of ZnO. Ion irradiation dissolves this impurity peak. Grain size of the samples found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (RhoRT) with irradiation is consistent with the lowering of FWHM of the XRD peaks. However for Zn0.96Mn0.04O, RhoRT decreases for initial fluence but increases for further increase of fluence. All the irradiated Zn0.98Mn0.02O samples show metal-semiconductor transition in temperature dependent resistivity measurement at low temperature. But all the irradiated Zn0.96Mn0.04O samples show semiconducting nature in the whole range of temperature. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

preprint2010arXiv

Bennett clocking of nanomagnetic logic using electrically induced rotation of magnetization in multiferroic single-domain nanomagnets

The authors show that it is possible to rotate the magnetization of a multiferroic (strain-coupled two-layer magnetostrictive-piezoelectric) nanomagnet by a large angle with a small electrostatic potential. This can implement Bennett clocking in nanomagnetic logic arrays resulting in unidirectional propagation of logic bits from one stage to another. This method of Bennett clocking is superior to using spin-transfer torque or local magnetic fields for magnetization rotation. For realistic parameters, it is shown that a potential of ~ 0.2 V applied to a multiferroic nanomagnet can rotate its magnetization by nearly 900 to implement Bennett clocking.

preprint2010arXiv

Equivalence Checking in Embedded Systems Design Verification

In this report we focus on some aspects related to modeling and formal verification of embedded systems. Many models have been proposed to represent embedded systems. These models encompass a broad range of styles, characteristics, and application domains and include the extensions of finite state machines, data flow graphs, communication processes and Petri nets. In this report, we have used a PRES+ model (Petri net based Representation for Embedded Systems) as an extension of classical Petri net model that captures concurrency, timing behaviour of embedded systems; it allows systems to be representative in different levels of abstraction and improves expressiveness by allowing the token to carry information. Modeling using PRES+, as discussed above, may be convenient for specifying the input behaviour because it supports concurrency. However, there is no equivalence checking method reported in the literature for PRES+ models to the best of our knowledge. In contrast, equivalence checking of FSMD models exist. As a first step, therefore, we seek to devise an algorithm to translate PRES+ models to FSMD models.

preprint2009arXiv

Synthesis and characterization of single phase Mn doped ZnO

Different samples of Zn1-xMnxO series have been prepared by conventional solid state sintering method. It has been identified, up to what extent of doping enable us to synthesize single-phase polycrystalline Mn doped ZnO samples which is one of the prerequisite for dilute magnetic semiconductor and we have analyzed its certain other physical aspects. In synthesizing the samples proportion of Mn varies from 1 at% to 5 at%. However the milling times have been varied (6, 12, 24, 48 & 96 hours) for only 2 at% Mn doped samples while for other samples (1, 3, 4 & 5 at% Mn doped) the milling time has been kept fixed at 96 hours. Room temperature X-Ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, no segregation of Mn and/or its oxides has been found. The 4 at% Mn doped samples show a weak peak of ZnMn2O4 apart from usual other peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping single-phase behavior is destroyed. Band gap for all the 2 at% Mn doped samples have been estimated as between 3.21 to 3.19 eV and reason for this low band gap values has been explained through the grain boundary trapping model. The room temperature resistivity measurement shows increase of resistivity up to 48 hours of milling and with further milling it saturates. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (tau 1), at defect site (tau 2) and average (tau av) increases with milling time.

preprint2006arXiv

Infrared absorption in a quantum wire in the presence of spin-orbit coupling: a technique to measure different types of spin-orbit interaction strengths

We show that the dominant absorption peak due to inter-subband transition in a gated quantum wire, with two occupied subbands, will split into a main peak and two satellite peaks if both Rashba and Dresselhaus spin-orbit interactions are present. One satellite peak will be red-shifted, and the other blue-shifted. From the relative intensity of either satellite peak, and the magnitude of the red- or blue-shift, we can determine both Rashba and Dresselhaus interaction strengths separately, if we also carry out a Hall measurement to determine the carrier concentration and a quantized conductance step measurement to determine the energy separation between subbands. This method may be a convenient alternative to usual magneto-transport measurements used to measure spin orbit interaction strengths. It is also more powerful because it allows us to measure the strengths of the two types of interactions separately.

preprint2004arXiv

Are spin junction transistors suitable for signal processing?

A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing functionality. Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing. This is primarily because of a large output ac conductance and poor isolation between input and output. The latter also hinders unidirectional propagation of logic signal from the input of a logic gate to the output. Other versions of these transistors appear to have better gain and isolation, but not better than those of a conventional transistor. Therefore, these devices may not improve state-of-the-art signal processing capability, although they may provide additional functionality by offering non-volatile storage. They may also have niche applications in non-linear circuits.

preprint2004arXiv

Computing with spins: From classical to quantum computing

This article traces a brief history of the use of single electron spins to compute. In classical computing schemes, a binary bit is represented by the spin polarization of a single electron confined in a quantum dot. If a weak magnetic field is present, the spin orientation becomes a binary variable which can encode logic 0 and logic 1. Coherent superposition of these two polarizations represent a qubit. By engineering the exchange interaction between closely spaced spins in neighboring quantum dots, it is possible to implement either classical or quantum logic gates.

preprint2003arXiv

The Effect of Ramsauer Type Transmission Resonances on the Conductance Modulation of Spin Interferometers

We use a mean field approach to study the conductance modulation of gate controlled semiconductor spin interferometers based on the Rashba spin-orbit coupling effect. The conductance modulation is found to be mostly due to Ramsauer type transmission resonances rather than the Rashba effect in typical structures. This is because of significant reflections at the interferometer's contacts due to large potential barriers and effective mass mismatch between the contact material and the semiconductor. Thus, unless particular care is taken to eliminate these reflections, any observed conductance modulation of spin interferometers may have its origin in the Ramsauer resonances (which is unrelated to spin) rather than the Rashba effect.