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Source author record

S. Bala Kumar

S. Bala Kumar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

14 published item(s)

preprint2012arXiv

Chiral tunneling in trilayer graphene

We study the effect of chiral-tunneling in Bernal and Rombhohedral stacked trilayer-graphene (3LG). Based on the chirality of the electronic bands, at the K-point, (Rombhohedral) Bernal-3LG exhibits 100% (50%) transparency across a heterojunction. Utilizing this property, we further investigate the effect of electron collimation in 3LG. Due to the difference in the Berry's phase, we show that, Rombhohedral-3LG is a better electron collimator, compared to monolayer and Bernal-bilayer graphene. Since, Bernal-3LG can be decomposed into two separate channels consisting of a monolayer and a modified Bernal-bilayer graphene; the Bernal-3LG is weaker electron collimator, compared to Rombhohedral-3LG.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High magnetoresistance in graphene nanoribbon heterojunction

We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the SC-aGNR and M-aGNR is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and electron energy. Finally, we design a magnetic-field-effect-transistor which yields a MR of close to 100%(85%) at low(room) temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Modeling of a vertical tunneling graphene heterojunction field-effect transistor

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work function deference between the graphene contact and the tunneling channel material. Modulation of the bottom-graphene-contact plays an important role in determining the switching characteristic of the device. Due to the electrostatic short-channel-effects stemming from the vertical-FET structure, the output I-V characteristics do not saturate. The scaling behaviors the vertical-FET as a function of the gate insulator thickness and the thickness of the tunneling channel material are examined.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

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preprint2012arXiv

Strain induced conductance modulation in graphene grain boundary

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topological structure of the GB. The transport gap of certain GBs can be significantly widened by strain, which is useful for improving the on-off ratio in potential transistor applications and for applications as monolayer strain sensors

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preprint2011arXiv

Conductance modulation in graphene nanoribbon under transver-se asymmetric electric potential

We theoretically study the effect of transverse electric potentials on the transport properties of armchair graphene nanoribbons (AGNRs), formed by pairs of asymme-tric gates placed along the side of the ribbon. Single pair and dual pair configurations are considered. We also examine the effect of hollows (spatial regions void of carbon atoms) in the AGNR channels. We find that the use of hollowed AGNRs in the dual pair configuration allows for a significant modulation of the transport gap, when the two pairs have opposite polarity of gate bias. Furthermore, we show that for the dual-gate system, hollowed AGNR channels exhibit the optimal ratio of ON-state to OFF-state conductance, due to the smaller OFF-state conductance compared with spatially homogenous AGNR channels. Our results indicate that transverse gate technology coupled with careful engineering of hollow geometry may lead to possible applications in graphene-based electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B=0T is greatly decreased while the current at B>0T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at room-temperature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multilayer graphene nanoribbon under vertical electric field

We study the effect of vertical electric-field (E-field) on the electronic properties of the multilayer armchair graphene nanoribbon (aGNR). Under E-field, the band structure of a bilayer aGNR undergoes interesting transformations such as change in the electron velocity, sign of the electron effective mass, band gap, the position of the band gap in the momentum space. Depending on the width of the aGNR and the applied E-field, the band gap of the aGNR may either be increased or decreased. When the applied E-field is above a critical value, the band gap of the bilayer aGNR is identical to that of the bilayer graphene, independent of the width. We also show that, for semiconducting multilayer aGNR with more than two layers, the band gap decreases with increasing E-field, resulting in a semiconductor-to-metallic transition. This can be utilized to enhance the performance of a graphene based transistor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multilayer graphene under vertical electric field

We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-state of a bilayer graphene are modified under the E-field. We also study the transformation of the band structure of multilayer graphenes. E-field induces finite (zero) bandgap in the even (odd)-layer ABA-stacking graphene. On the other hand, finite bandgap is induced in all ABC-stacking graphene. We also identify the optimum E-field to obtain the maximum bandgap in the multilayer graphenes. Finally we compare our results with the experimental results of a field-effect-transistor.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide (MX2). We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared to the silicon transistors if thin high-κ gate insulator is used. This makes monolayer MX2 promising 2D materials for future nanoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transversal electric field effect in multilayer graphene nanoribbon

We study the effect of transversal electric-field (E-field) on the electronic properties of multilayer armchair-graphene-nanoribbon (AGNR). The bandgap in multilayer-AGNRs can be reversibly modulated with the application of E-field. At optimized widths, we obtain a semiconductor (SC) to metallic (M), as well as M-SC transition. The AGNR electronic bands undergo vivid transformations due to the E-field, leading to phenomena such as increase in electron velocity, change in the sign of the electron effective mass, and the formation of linear dispersion with massless Dirac fermions similar to 2D-graphene. These effects are very useful and can be utilized for device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation

The electronic properties of armchair graphene nanoribbons (AGNRs) can be significantly modified from semiconducting to metallic states, by applying a uniform perpendicular magnetic field (B-field). Here, we theoretically study the bandgap modulation induced by a perpendicular B-field. The applied B-field causes the lowest conduction subband and the top-most valence subband to move closer to one another to form the n=0 Landau level. We exploit this effect to realize a device relevant MR modulation. Unlike in conventional spin-valves, this intrinsic MR effect is realized without the use of any ferromagnetic leads. The AGNRs with number of dimers, Na=3p+1 [p=1,2,3,...] show the most promising behavior for MR applications, with large conductance modulation and hence, high MR ratio at the optimal source-drain bias. However, the MR is suppressed at higher temperature due to the spread of the Fermi function distribution. We also investigate the importance of the source-drain bias in optimizing the MR. Lastly, we show that edge roughness of AGNRs has the unexpected effect of improving the magnetic sensitivity of the device and thus increasing the MR ratio.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons

We developed a unified mesoscopic transport model for graphene nanoribbons, which combines the non-equilibrium Green's function (NEGF) formalism with the real-space π-orbital model. Based on this model, we probe the spatial distributions of electrons under a magnetic field, in order to obtain insights into the various signature Hall effects in disordered armchair graphene nanoribbons (AGNR). In the presence of a uniform perpendicular magnetic field (B\perp-field), a perfect AGNR shows three distinct spatial current profiles at equilibrium, depending on its width. Under non-equilibrium conditions (i.e. in the presence of an applied bias), the net electron flow is restricted to the edges and occurs in opposite directions depending on whether the Fermi level lies within the valence or conduction band. For electrons at energy level below the conduction window, the B\perp-field gives rise to local electron flux circulation, although the global flux is zero. Our study also reveals the suppression of electron backscattering as a result of the edge transport which is induced by the B\perp-field. This phenomenon can potentially mitigate the undesired effects of disorders, such as the bulk and edge vacancies, on the transport properties of AGNR. Lastly, we show that the effect of B\perp-field on electronic transport is less significant in the multimode compared to the single mode electron transport.

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