Researcher profile

M. B. A. Jalil

M. B. A. Jalil contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2010arXiv

Charge fractionalization in biased bilayer graphene

We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a bosonic field with nontrivial topology allowing for the exploration of Dirac-like dynamics at higher particle momenta. It also induces an odd number of zero modes, which, together with the conjugation symmetry between positive and negative energy states, are the requisite conditions for charge fractionalization. A self-conjugate, localized zero mode is constructed for a semi-infinite graphene sheet with zigzag edge; scenarios can occur readily where one sublattice component (pseudospin) dominates. While the other valley also has a similar zero mode, a layer asymmetry can be invoked to lift this degeneracy allowing for detection of distinguishable charge-1/2 edge states per valley.

preprint2010arXiv

Local spin polarization of Landau levels under Rashba spin-orbit coupling

We investigate the local spin polarization texture of Landau levels under Rashba spin-orbit coupling in bulk two-dimensional electron gas (2DEG) systems. In order to analyze the spin polarization as a function of two-dimensional coordinates within the 2DEG, we first solve the system eigenstates in the symmetric gauge. Our exact analytical wavefunction solutions are shown to be gauge invariant with solutions obtained in the commonly used Landau gauge. We illustrate the two-dimensional spatial spin profile for a single Landau level and suggest means to measure and utilize the local polarization in practice.

preprint2010arXiv

Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation

The electronic properties of armchair graphene nanoribbons (AGNRs) can be significantly modified from semiconducting to metallic states, by applying a uniform perpendicular magnetic field (B-field). Here, we theoretically study the bandgap modulation induced by a perpendicular B-field. The applied B-field causes the lowest conduction subband and the top-most valence subband to move closer to one another to form the n=0 Landau level. We exploit this effect to realize a device relevant MR modulation. Unlike in conventional spin-valves, this intrinsic MR effect is realized without the use of any ferromagnetic leads. The AGNRs with number of dimers, Na=3p+1 [p=1,2,3,...] show the most promising behavior for MR applications, with large conductance modulation and hence, high MR ratio at the optimal source-drain bias. However, the MR is suppressed at higher temperature due to the spread of the Fermi function distribution. We also investigate the importance of the source-drain bias in optimizing the MR. Lastly, we show that edge roughness of AGNRs has the unexpected effect of improving the magnetic sensitivity of the device and thus increasing the MR ratio.

preprint2010arXiv

The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons

We developed a unified mesoscopic transport model for graphene nanoribbons, which combines the non-equilibrium Green's function (NEGF) formalism with the real-space π-orbital model. Based on this model, we probe the spatial distributions of electrons under a magnetic field, in order to obtain insights into the various signature Hall effects in disordered armchair graphene nanoribbons (AGNR). In the presence of a uniform perpendicular magnetic field (B\perp-field), a perfect AGNR shows three distinct spatial current profiles at equilibrium, depending on its width. Under non-equilibrium conditions (i.e. in the presence of an applied bias), the net electron flow is restricted to the edges and occurs in opposite directions depending on whether the Fermi level lies within the valence or conduction band. For electrons at energy level below the conduction window, the B\perp-field gives rise to local electron flux circulation, although the global flux is zero. Our study also reveals the suppression of electron backscattering as a result of the edge transport which is induced by the B\perp-field. This phenomenon can potentially mitigate the undesired effects of disorders, such as the bulk and edge vacancies, on the transport properties of AGNR. Lastly, we show that the effect of B\perp-field on electronic transport is less significant in the multimode compared to the single mode electron transport.

preprint2010arXiv

Valley filter in strain engineered graphene

We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic gates. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters.

preprint2009arXiv

Unified Description of the Intrinsic Spin-Hall Effects

The intrinsic spin-Hall effects (SHE) in $p$-doped semiconductors [S. Murakami et al., Science 301, 1348 (2003)] and two-dimensional electron gases with Rashba spin-orbit coupling [J. Sinova et al., Phys. Rev. Lett. 92, 126603 (2004)] have been the subject of many theoretical studies, but their driving mechanisms have yet to be described in a unified manner. The former effect arises from the adiabatic topological curvature of momentum space, from which holes acquire a spin-dependent anomalous velocity. The SHE in the Rashba system, on the other hand, results from the momentum-dependent spin dynamics in the presence of an external electric field. The two effects clearly appear to originate from distinct mechanisms. Our motivation for this article is to address this apparent disparity and, in particular, to seek a unifying description of the effects. In this endeavor, we consider the explicit time-dependence of SHE systems starting with a general spin-orbit model. We find that by performing a gauge transformation of the general model with respect to time, a well-defined gauge field appears in time space which has the physical significance of an effective magnetic field. This magnetic field is shown to precisely account for the SHE in the Rashba system in the adiabatic limit. Remarkably, by carefully analyzing the equation of motion of the general model, this field component is also found to be the origin of the anomalous velocity due to the momentum space curvature. Our study therefore unifies the two seemingly disparate intrinsic SHEs under a common adiabatic framework.

preprint2009arXiv

Unified Semi-Classical Description of Intrinsic Spin-Hall Effect in Spintronic, Optical, and Graphene Systems

A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we construct an intuitive expression for the spin-Hall current and conductivity. Our method makes transparent the physical mechanism which drives the effect, and unifies the SHE across several spintronic and optical systems. Finally, we propose an analogous effect in bilayer graphene.