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Researcher profile

S. Amirthapandian

S. Amirthapandian contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.chem-ph

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Published work

9 published item(s)

preprint2016arXiv

Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition from amorphous at RT, nanocrystalline at 300oC to microcrystalline at 400oC has been observed by Transmission Electron Microscopy (TEM). Average surface roughness (Ra) and morphology has been explored by using Atomic Force Microscopy (AFM). UV-VIS spectrophotometry has been employed to probe the substrate temperature induced changes in optical band-gap (Eg) of grown thin films in reflectance mode. It was found that Eg was increased from 5.08 to 5.21 eV as substrate temperature was increased from RT to 500oC. Urbach energy tail (Eu) along with weak absorption tail (WAT) energy (Et) have been estimated to account for the optical disorder which was found to decrease with associated increase in Eg.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS) method in a chemical vapour deposition technique for the first time. Mg incorporation is confirmed using X-ray photoelectron (XPS) and electron energy loss spectroscopic (EELS) measurements. Energy filtered transmission electron microscopic (EFTEM) studies are used for finding the Mg incorporation pathway in the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires along with the electrical characterization on heterojunction formed between nanowires and n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaN nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Growth of InN quantum dots to nanorods: A competition between nucleation and growth rates

Growth evolution of InN nanostructures via a chemical vapor deposition technique is reported using In_2O_3 as precursor material and NH_3 as reactive gas in the temperature range of 550-700 ^oC. Morphology of the nanostructures solely depends on the growth temperature, evolving from quantum dot sized nanoparticles to nanorods. It is found that 630 ^oC is the threshold temperature for nanorod growth. At 630 ^oC, nucleation starts with multifaceted particle having {10-12} surface planes. Subsequently, hexagonal polyhedral NRs are grown along the [0001] direction with non-polar surfaces of m-planes {10-10}. A comprehensive study is carried out to understand the evolution of nanorods as a function of growth parameters like temperature, time and gas flow rate. Change in the morphology of nanostructures is explained based on the nucleation rate and the growth rates during the phase formation. Raman studies of these nanostructures show that a biaxial strain is developed because of unintentional impurity doping with the increase in growth temperature.

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preprint2015arXiv

Influence of oxygen in architecting large scale nonpolar GaN nanowires

Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of exceptionally high structural and optical quality nonpolar GaN nanowires with controlled and uniform surface morphology and size distribution, for large scale production. The role of O contamination (~1-10^5 ppm) in the surface architecture of these nanowires is investigated with the possible mechanism involved. Nonpolar GaN nanowires grown in O rich condition show the inhomogeneous surface morphologies and sizes (50 - 150 nm) while nanowires are having precise sizes of 40(5) nm and uniform surface morphology, for the samples grown in O reduced condition. Relative O contents are estimated using electron energy loss spectroscopy studies. Size-selective growth of uniform nanowires is also demonstrated, in the O reduced condition, using different catalyst sizes. Photoluminescence studies along with the observation of single-mode waveguide formation, as far field bright violet multiple emission spots, reveal the high optical quality of the nonpolar GaN nanowires grown in the O reduced condition.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Novel single phase vanadium dioxide nanostructured films for methane sensing near room temperature

Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation in O_2 atmosphere at 550 ^oC. The partial pressure of O_2 is controlled to obtain stoichiometric VO_2 with the samples showing rutile monoclinic crystalline symmetry and regions of rod shaped nano-architectures. These nanostructured films exhibit a reversible semiconductor to metal transition in the temperature range of 60-70 ^oC. Gas sensing experiments are carried out in the temperature span from 25 ^oC to 200 ^oC in presence of CH_4. These experiments reveal that the films respond very well at temperatures as low as 50 ^oC, in the semiconducting state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optical Properties of Mono-Dispersed AlGaN Nanowires in the Single-Prong Growth Mechanism

Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of AlGaN nanowires are discussed. These variations in the morphology of the nanowires are understood invoking Ostwald ripening of Au catalyst nanoparticles at high temperature followed by the effect of single and multi-prong growth mechanism. Energy-filtered transmission electron microscopy is used as an evidence for the presence of Al in the as-prepared samples. A significant blue shift of the band gap, in the absence of quantum confinement effect in the nanowires with diameter about 100 nm, is used as a supportive evidence for the AlGaN alloy formation. Polarized resonance Raman spectroscopy with strong electron-phonon coupling along with optical confinement due to the dielectric contrast of nanowire with respect to that of surrounding media are adopted to understand the crystalline orientation of a single nanowire in the sub-diffraction limit of about 100 nm using 325 nm wavelength, for the first time. The results are compared with the structural analysis using high resolution transmission microscopic study.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photoluminescence of oxygen vacancies and hydroxyl group surface functionalized SnO_2 nanoparticles

We report, for the first time, the luminescence property of the hydroxyl group surface functionalized quantum dots (QDs) and nanoparticles (NPs) of SnO_2 using low energy excitations of 2.54 eV (488 nm) and 2.42 eV (514.5 nm). This luminescence is in addition to generally observed luminescence from 'O' defects. The as-prepared SnO_2 quantum dots (QDs) are annealed at different temperatures in ambient conditions to create varied NPs in size. Subsequently, average size of the NPs is calculated from the acoustic vibrations observed at low frequencies in the Raman spectra and by the transmission electron microscopic measurements. Detailed photoluminescence studies with 3.815 eV (325 nm) excitation reveal the nature of in-plane and bridging 'O' vacancies as well as adsorption and desorption occurred at different annealing temperatures. X-ray photoelectron spectroscopy studies also support this observation. Defect level related to the surface -OH functional groups shows a broad luminescence peak around 1.96 eV in SnO_2 NPs which is elaborated with the help of temperature dependent studies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor

Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In the present study, we have grown the GaN nanowires at a temperature, as low as 700 ^oC. Role of indium in the reduction of growth temperature is discussed in the ambit of Raoult's law. Indium is used to increase the vapor pressure of the Ga sufficiently to evaporate even at low temperature initiating the growth of GaN nanowires. In addition to the studies related to structural and vibrational properties, optical properties of the grown nanowires are also reported for detailed structural analysis.

0 citations0 reviewsNo code linkedOpen access