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Researcher profile

S. Adam

S. Adam contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2020arXiv

Response to Comment on "The role of electron-electron interactions in two-dimensional Dirac fermions"

Hesselmann {\it et al}.~question one of our conclusions, namely, the suppression of Fermi velocity at the Gross-Neveu critical point for the specific case of vanishing long-range interactions and at zero energy. The possibility they raise could occur in any finite-size extrapolation of numerical data. While we cannot definitively rule out this possibility, we provide mathematical bounds on its likelihood.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

2D transport and screening in topological insulator surface states

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged disorder in the environment result in electron and hole puddles that dominate the electronic properties of these materials. By calculating the polarizability of the surface state using the random phase approximation, and determining the characteristics of puddles using the self-consistent approximation, we find that band asymmetry plays a crucial role in determining experimentally measured quantities including the conductivity and the puddle autocorrelation length.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Semiclassical Boltzmann transport theory for graphene multilayers

We calculate the conductivity of arbitrarily stacked multilayer graphene sheets within a relaxation time approximation, considering both short-range and long-range impurities. We theoretically investigate the feasibility of identifying the stacking order of these multilayers using transport measurements. For relatively clean samples, the conductivities of the various stacking configurations depend on the carrier density as a power-law for over two decades. This dependence arises from a low density decomposition of the multilayer band structure into a sum of chiral Hamiltonians. For dirty samples, the simple power-law relationship no longer holds. Nonetheless, identification of the number of layers and stacking sequence is still possible by careful comparison of experimental data to the results presented here.

0 citations0 reviewsNo code linkedOpen access