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S. Adam

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Published work

8 published item(s)

preprint2020arXiv

Response to Comment on "The role of electron-electron interactions in two-dimensional Dirac fermions"

Hesselmann {\it et al}.~question one of our conclusions, namely, the suppression of Fermi velocity at the Gross-Neveu critical point for the specific case of vanishing long-range interactions and at zero energy. The possibility they raise could occur in any finite-size extrapolation of numerical data. While we cannot definitively rule out this possibility, we provide mathematical bounds on its likelihood.

preprint2015arXiv

Charge Puddles in Graphene Near the Dirac Point

The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near charge neutrality, a markedly distinct property from conventional two-dimensional electron gases. By performing scanning tunneling microscopy/spectroscopy on a mesoscopic graphene device, we directly observe the puddles' growth, both in spatial extent and in amplitude, as the Dirac point is approached. Self-consistent screening theory provides a unified description of both the macroscopic transport properties and the microscopically observed charge disorder.

preprint2015arXiv

Interaction driven metal-insulator transition in strained graphene

The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between $π$-electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that without strain, graphene remains metallic and changing the substrate from SiO$_2$ to suspended samples hardly makes any difference. In contrast, applying a rather large -- but experimentally realistic -- uniform and isotropic strain of about $15\%$ seems to be a promising route to making graphene an antiferromagnetic Mott insulator.

preprint2015arXiv

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism.

preprint2012arXiv

2D transport and screening in topological insulator surface states

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged disorder in the environment result in electron and hole puddles that dominate the electronic properties of these materials. By calculating the polarizability of the surface state using the random phase approximation, and determining the characteristics of puddles using the self-consistent approximation, we find that band asymmetry plays a crucial role in determining experimentally measured quantities including the conductivity and the puddle autocorrelation length.

preprint2011arXiv

Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.

preprint2011arXiv

Semiclassical Boltzmann transport theory for graphene multilayers

We calculate the conductivity of arbitrarily stacked multilayer graphene sheets within a relaxation time approximation, considering both short-range and long-range impurities. We theoretically investigate the feasibility of identifying the stacking order of these multilayers using transport measurements. For relatively clean samples, the conductivities of the various stacking configurations depend on the carrier density as a power-law for over two decades. This dependence arises from a low density decomposition of the multilayer band structure into a sum of chiral Hamiltonians. For dirty samples, the simple power-law relationship no longer holds. Nonetheless, identification of the number of layers and stacking sequence is still possible by careful comparison of experimental data to the results presented here.

preprint2002arXiv

Exchange and spin-fluctuation superconducting pairing in cuprates

We propose a microscopical theory of superconductivity in CuO$_2$ layer within the effective two-band Hubbard model in the strong correlation limit. By applying a projection technique for the matrix Green function in terms of the Hubbard operators, the Dyson equation is derived. It is proved that in the mean-field approximation d-wave superconducting pairing mediated by the conventional exchange interaction occurs. Allowing for the self-energy corrections due to kinematic interaction, a spin-fluctuation d-wave pairing is also obtained. $T\sb{c}$ dependence on the hole concentration and $\bf k$-dependence of the gap function are derived. The results show that the exchange interaction (which stems from the interband hopping) prevails over the kinematic interaction (which stems from the intraband hopping).