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Researcher profile

Ryo Ohshima

Ryo Ohshima contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2020arXiv

Modulation of spin conversion in a 1.5 nm-thick Pd film by ionic gating

Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd film, which was corroborated by suppression of the resistivity in the Pd. Electromotive forces arising from the inverse spin Hall effect in Pd under spin pumping were substantially modulated by the gating, in consequence of the modulation of the spin Hall conductivity of Pd as in an ultrathin Pt film. The same experiment using a thin Cu film, for which the band structure is largely different from Pd and Pt and its SOI is quite small, provides further results supporting our claim. The results obtained help in developing a holistic understanding of the gate-tunable SOI in solids and confirm a previous explanation of the significant modulation of the spin Hall conductivity in an ultrathin Pt film by gating.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical visualization of the enhanced spin Hall effect in bismuth doped silicon

Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.

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preprint2020arXiv

Spin transport in a lateral spin valve with a suspended Cu channel

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decrease in the spin diffusion length in the suspended Cu channel is attributed to an increase in spin scattering originating from naturally oxidized Cu at the bottom of the Cu channel.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Investigation of gating effect in Si spin MOSFET

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.

0 citations0 reviewsNo code linkedOpen access