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Ryan Stein

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2 publications

preprint2015arXiv

Tuning the electronic structures of silicene and germanene by biaxial strain and electric field

We present a first-principles study of effects of small biaxial strain (∣ε∣≤5%|\varepsilon|\le 5\%) and perpendicular electric field (E-field) on the electronic and phonon properties of low-buckled silicene and germanene. With an increase of the biaxial strain, the conduction bands at the high symmetric ΓΓ and MM points of the first Brillouin zone shift significantly towards the Fermi level in both silicene and germanene. In contrast, the E-field changes the band dispersions near the ΓΓ and open a small band gap at the K point in silicene. We found that the field-induced gap opening in silicene could be enhanced by a compressive strain while mitigated by a tensile strain. This result highlights the tunability of the electronic structures of silicene by combining the mechanical strain and the electric field.

preprint2013arXiv

Electron-Phonon Coupling in Two-Dimensional Silicene and Germanene

Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled (LB) monolayer silicene and germanene. Despite of the similar honeycomb atomic arrangement and linear band dispersion, the EPC matrix-element squares of the ΓΓ-EgE_g and K-A1A_1 modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicene compensates this reduction by providing a larger joint electronic density of states near the Dirac point. We predict that Kohn anomalies associated with these two optical modes are significant in silicene. In addition, the EPC-induced frequency shift and linewidth of the Raman-active ΓΓ-EgE_g mode in silicene are calculated as a function of doping. The results are comparable to those in graphene, indicating a similar non-adiabatic dynamical origin. In contrast, the EPC in germanene is found to be much reduced.

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