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M. Y. Chou

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Published work

6 published item(s)

preprint2015arXiv

Topological semi-metals with line nodes and drumhead surface states

In an ordinary three-dimensional metal the Fermi surface forms a two-dimensional closed sheet separating the filled from the empty states. Topological semimetals, on the other hand, can exhibit protected one-dimensional Fermi lines or zero-dimensional Fermi points, which arise due to an intricate interplay between symmetry and topology of the electronic wavefunctions. Here, we study how reflection symmetry, time-reversal symmetry, SU(2) spin-rotation symmetry, and inversion symmetry lead to the topological protection of line nodes in three-dimensional semi-metals. We obtain the crystalline invariants that guarantee the stability of the line nodes in the bulk and show that a quantized Berry phase leads to the appearance of protected surfaces states with a nearly flat dispersion. By deriving a relation between the crystalline invariants and the Berry phase, we establish a direct connection between the stability of the line nodes and the topological surface states. As a representative example of a topological semimetal with line nodes, we consider Ca$_3$P$_2$ and discuss the topological properties of its Fermi line in terms of a low-energy effective theory and a tight-binding model, derived from ab initio DFT calculations. Due to the bulk-boundary correspondence, Ca$_3$P$_2$ displays nearly dispersionless surface states, which take the shape of a drumhead. These surface states could potentially give rise to novel topological response phenomena and provide an avenue for exotic correlation physics at the surface.

preprint2013arXiv

Charge transport through graphene junctions with wetting metal leads

Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and extraction processes. We have performed transport calculations for graphene junctions with wetting metal leads (metal leads that bind covalently to graphene) using nonequilibrium Green's functions and density functional theory. Quantitative information is provided on the increased resistance with respect to ideal contacts and on the statistics of current fluctuations. We find that charge transport through the studied two-terminal graphene junction with Ti contacts is pseudo-diffusive up to surprisingly high energies.

preprint2013arXiv

Electron-Phonon Coupling in Two-Dimensional Silicene and Germanene

Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled (LB) monolayer silicene and germanene. Despite of the similar honeycomb atomic arrangement and linear band dispersion, the EPC matrix-element squares of the $Γ$-$E_g$ and K-$A_1$ modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicene compensates this reduction by providing a larger joint electronic density of states near the Dirac point. We predict that Kohn anomalies associated with these two optical modes are significant in silicene. In addition, the EPC-induced frequency shift and linewidth of the Raman-active $Γ$-$E_g$ mode in silicene are calculated as a function of doping. The results are comparable to those in graphene, indicating a similar non-adiabatic dynamical origin. In contrast, the EPC in germanene is found to be much reduced.

preprint2012arXiv

Optical Phonon Anomaly in Bilayer Graphene with Ultrahigh Carrier Densities

Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both are shown to have distinct EPC-induced phonon linewidths and frequency shifts as a function of the Fermi level $E_F$. We find that the AS mode has a strong coupling with the lowest two conduction bands when the Fermi level $E_F$ is nearly 0.5 eV above the neutrality point, giving rise to a giant linewidth (more than 100 cm$^{-1}$) and a significant frequency softening ($\sim$ 60 cm$^{-1}$). Our \emph{ab initio} calculations show that the origin of the dramatic change arises from the unusual band structure in BLG. The results highlight the band structure effects on the EPC in BLG in the high carrier density regime.

preprint2011arXiv

Enhanced Optical Conductivity Induced by Surface States in ABC-stacked Few-Layer Graphene

The surface states of ABC-stacked few-layer graphene (FLG) are studied based on density-functional theory. These states form flat bands near the Fermi level, with the k-space range increasing with the layer number. Based on a tight-binding model, the characteristics of these surface states and their evolution with respect to the number of layers are examined. The infrared optical conductivity is then calculated within the single-particle excitation picture. We show that the surface states introduce unique peaks at around 0.3 eV in the optical conductivity spectra of ABC-stacked FLG when the polarization is parallel to the sheets, in good agreement with recent experimental measurement. Furthermore, as the layer number increases, the absorption amplitude is greatly enhanced and the peak position red-shifts, which provides a feasible way to identify the number of layers for ABC-stacked FLG using optical conductivity measurements.

preprint2011arXiv

Lattice Vibrational Modes and their Frequency Shifts in Semiconductor Nanowires

We have performed first-principles calculations to study the lattice vibrational modes and their Raman activities in silicon nanowires (SiNWs). Two types of characteristic vibrational modes are examined: high-frequency optical modes and low-frequency confined modes. Their frequencies have opposite size dependence with a red shift for the optical modes and a blue shift for the confined modes as the diameter of SiNWs decreases. In addition, our calculations show that these vibrational modes can be detected by Raman scattering measurements, providing an efficient way to estimate the size of SiNWs.