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Jia-An Yan

Jia-An Yan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scimath.OCphysics.comp-ph

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Published work

12 published item(s)

preprint2016arXiv

Interlayer breathing and shear modes in NbSe2 atomic layers

Atomically thin NbSe2 is a metallic layered transition metal dichalcogenide (TMD) with considerably different crystallographic structure and electronic properties from other TMDs, such as MoS2, MoSe2, WS2 and WSe2. Properties of TMD atomic layers are sensitive to interlayer coupling. Here we investigate the interlayer phonons of few-layer NbSe2 by ultralow-frequency Raman spectroscopy. We observe both the interlayer breathing modes and shear modes at frequencies below 40 cm-1 for samples of 2 to 15 layers. Their frequency, Raman activity, and environmental instability depend systematically on the layer number. We account for these results utilizing a combination of the linear-chain model, group-theory analysis and first-principles calculations. Although NbSe2 possesses different stacking order from MoS2, MoSe2, WS2 and WSe2, it exhibits the same symmetry and Raman selection rules, as well as similar interlayer coupling strength and thickness dependence of interlayer phonon modes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy

We investigate the ultralow-frequency Raman response of atomically thin ReS2, a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and few-layer ReS2 exhibit rich Raman spectra at frequencies below 50 cm-1, where a panoply of interlayer shear and breathing modes are observed. The emergence of these interlayer phonon modes indicate that the ReS2 layers are coupled and stacked orderly, in contrast to the general belief that the ReS2 layers are decoupled from one another. While the interlayer breathing modes can be described by a linear chain model as in other 2D layered crystals, the shear modes exhibit distinctive behavior due to the in-plane lattice distortion. In particular, the two shear modes in bilayer ReS2 are non-degenerate and well separated in the Raman spectrum, in contrast to the doubly degenerate shear modes in other 2D materials. By carrying out comprehensive first-principles calculations, we can account for the frequency and Raman intensity of the interlayer modes, and determine the stacking order in bilayer ReS2.

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preprint2015arXiv

Probing the uniaxial strains in MoS$_2$ using polarized Raman spectroscopy: A first-principles study

Characterization of strain in two-dimensional (2D) crystals is important for understanding their properties and performance. Using first-principles calculations, we study the effects of uniaxial strain on the Raman-active modes in monolayer MoS$_2$. We show that the in-plane $E'$ mode at 384 cm$^{-1}$ and the out-of-plane $A_1'$ mode at 403 cm$^{-1}$ can serve as fingerprints for the uniaxial strain in this 2D material. Specifically, under a uniaxial strain, the doubly degenerate $E'$ mode splits into two non-degenerate modes: one is $E_{\parallel}'$ mode in which atoms vibrate in parallel to the strain direction, and the other is $E_\perp'$ mode in which atoms vibrate perpendicular to the strain direction. The frequency of the $E_{\parallel}'$ mode blue-shifts for a compressive strain, but red-shifts for a tensile strain. In addition, due to the strain-induced anisotropy in the MoS$_2$ lattice, the polarized Raman spectra of the $E_{\parallel}'$ and $E_{\perp}'$ modes exhibit distinct angular dependence for specific laser polarization setups, allowing for a precise determination of the direction of the uniaxial strain with respect to the crystallographic orientation. Furthermore, we find that the polarized Raman intensity of the $A_1'$ mode also shows evident dependence on the applied strain, providing additional effective clues for determining the direction of the strain even without knowledge of the crystallographic orientation. Thus, polarized Raman spectroscopy offers an efficient non-destructive way to characterize the uniaxial strains in monolayer MoS$_2$.

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preprint2015arXiv

Strain-tunable topological quantum phase transition in buckled honeycomb lattices

Low-buckled silicene is a prototypical quantum spin Hall insulator with the topological quantum phase transition controlled by an out-of-plane electric field. We show that this field-induced electronic transition can be further tuned by an in-plane hydrostatic biaxial strain $\varepsilon$, owing to the curvature-dependent spin-orbit coupling (SOC): There is a $Z_2$ = 1 topological insulator phase for biaxial strain $|\varepsilon|$ smaller than 0.07, and the band gap can be tuned from 0.7 meV for $\varepsilon = +0.07$ up to a fourfold 3.0 meV for $\varepsilon = -0.07$. First-principles calculations also show that the critical field strength $E_c$ can be tuned by more than 113\%, with the absolute values nearly 10 times stronger than the theoretical predictions based on a tight-binding model. The buckling structure of the honeycomb lattice thus enhances the tunability of both the quantum phase transition and the SOC-induced band gap, which are crucial for the design of topological field-effect transistors based on two-dimensional materials.

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preprint2015arXiv

Tuning the electronic structures of silicene and germanene by biaxial strain and electric field

We present a first-principles study of effects of small biaxial strain ($|\varepsilon|\le 5\%$) and perpendicular electric field (E-field) on the electronic and phonon properties of low-buckled silicene and germanene. With an increase of the biaxial strain, the conduction bands at the high symmetric $Γ$ and $M$ points of the first Brillouin zone shift significantly towards the Fermi level in both silicene and germanene. In contrast, the E-field changes the band dispersions near the $Γ$ and open a small band gap at the K point in silicene. We found that the field-induced gap opening in silicene could be enhanced by a compressive strain while mitigated by a tensile strain. This result highlights the tunability of the electronic structures of silicene by combining the mechanical strain and the electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A Note on the Monge-Kantorovich Problem in the Plane

The Monge-Kantorovich mass-transportation problem has been shown to be fundamental for various basic problems in analysis and geometry in recent years. Shen and Zheng (2010) proposed a probability method to transform the celebrated Monge-Kantorovich problem in a bounded region of the Euclidean plane into a Dirichlet boundary problem associated to a nonlinear elliptic equation. Their results are original and sound, however, their arguments leading to the main results are skipped and difficult to follow. In the present paper, we adopt a different approach and give a short and easy-followed detailed proof for their main results.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene

Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such devices are quantified by the dimensionless thermoelectric figure of merit (ZT), which is proportional to the ratio of a device's electrical conductance to its thermal conductance. High ZT (>2) has been achieved in materials via all-scale hierarchical architecturing. This efficiency holds at high temperatures (700K~900K) but quickly diminishes at lower temperatures. In this paper, a recently-fabricated two-dimensional (2D) semiconductor called phosphorene (monolayer black phosphorus) is assessed for its thermoelectric capabilities. First-principles and model calculations reveal that phosphorene possesses spatially-anisotropic electrical and thermal conductances. The prominent electrical and thermal conducting directions are orthogonal to one another, enhancing the ratio of these conductances. As a result, ZT can reach 2.5 (the criterion for commercial deployment) along the armchair direction of phosphorene at T=500K and is greater than 1 even at room temperature given moderate doping (~2 x 10^16 m-2). Ultimately, phosphorene stands out as an environmentally sound thermoelectric material with unprecedented qualities: intrinsically, it is a mechanically flexible material that converts heat energy with high efficiency at low temperatures (~ 300K) - one whose performance does not require any sophisticated engineering techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Stability and properties of high-buckled two-dimensional tin and lead

In realizing practical non-trivial topological electronic phases stable structures need to be determined first. Tin and lead do stabilize an optimal two-dimensional high-buckled phase --a hexagonal-close packed bilayer structure with nine-fold atomic coordination-- and they do not stabilize topological fullerenes, as demonstrated by energetics, phonon dispersion curves, and the structural optimization of finite-size samples. The high-buckled phases are metallic due to their high atomic coordination. The optimal structure of fluorinated tin lacks three-fold symmetry and it stabilizes small samples too. It develops two oblate conical valleys on the first Brillouin zone coupling valley, sublattice, and spin degrees of freedom with a novel $τ_zσ_xs_x$ term, thus making it a new 2D platform for valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electric Field Effects on the Optical Vibrations in AB-Stacked Bilayer Graphene

Using first-principles methods, we show that an applied perpendicular electric field $E$ breaks the inversion symmetry of AB-stacked bilayer graphene (BLG), thereby slightly mixing the two in-plane high-energy optical vibrations ($E_g$ and $E_u$ modes). The mixed amplitudes increase parabolically with respect to the field strength when $E$$<$2.0 V/nm, and then exhibit linear dependence when $E$$>$2.0 V/nm. In contrast, the mixing effect on the out-of-plane vibrations ($A_{1g}$ and $A_{2u}$ modes) is found to be much stronger, with the mixed amplitudes nearly an order of magnitude larger than those for the in-plane modes. For the two in-plane modes, we then calculate their phonon linewidths and frequency shifts as a function of the electric field as well as the Fermi level. Our results reveal delicate interplay between electrons and phonons in BLG, tunable by the applied fields and charge carrier densities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron-Phonon Coupling in Two-Dimensional Silicene and Germanene

Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled (LB) monolayer silicene and germanene. Despite of the similar honeycomb atomic arrangement and linear band dispersion, the EPC matrix-element squares of the $Γ$-$E_g$ and K-$A_1$ modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicene compensates this reduction by providing a larger joint electronic density of states near the Dirac point. We predict that Kohn anomalies associated with these two optical modes are significant in silicene. In addition, the EPC-induced frequency shift and linewidth of the Raman-active $Γ$-$E_g$ mode in silicene are calculated as a function of doping. The results are comparable to those in graphene, indicating a similar non-adiabatic dynamical origin. In contrast, the EPC in germanene is found to be much reduced.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optical Phonon Anomaly in Bilayer Graphene with Ultrahigh Carrier Densities

Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both are shown to have distinct EPC-induced phonon linewidths and frequency shifts as a function of the Fermi level $E_F$. We find that the AS mode has a strong coupling with the lowest two conduction bands when the Fermi level $E_F$ is nearly 0.5 eV above the neutrality point, giving rise to a giant linewidth (more than 100 cm$^{-1}$) and a significant frequency softening ($\sim$ 60 cm$^{-1}$). Our \emph{ab initio} calculations show that the origin of the dramatic change arises from the unusual band structure in BLG. The results highlight the band structure effects on the EPC in BLG in the high carrier density regime.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhanced Optical Conductivity Induced by Surface States in ABC-stacked Few-Layer Graphene

The surface states of ABC-stacked few-layer graphene (FLG) are studied based on density-functional theory. These states form flat bands near the Fermi level, with the k-space range increasing with the layer number. Based on a tight-binding model, the characteristics of these surface states and their evolution with respect to the number of layers are examined. The infrared optical conductivity is then calculated within the single-particle excitation picture. We show that the surface states introduce unique peaks at around 0.3 eV in the optical conductivity spectra of ABC-stacked FLG when the polarization is parallel to the sheets, in good agreement with recent experimental measurement. Furthermore, as the layer number increases, the absorption amplitude is greatly enhanced and the peak position red-shifts, which provides a feasible way to identify the number of layers for ABC-stacked FLG using optical conductivity measurements.

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