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Runze Qi

Runze Qi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.opticscond-mat.str-elhep-thquant-ph

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Published work

3 published item(s)

preprint2019arXiv

Generalizations of Reflected Entropy and the Holographic Dual

We introduce a new class of quantum and classical correlation measures by generalizing the reflected entropy to multipartite states. We define the new measures for quantum systems in one spatial dimension. For quantum systems having gravity duals, we show that the holographic duals of these new measures are various types of minimal surfaces consist of different entanglement wedge cross sections. One special generalized reflected entropy is $Δ_R$, with the holographic dual proportional to the so called multipartite entanglement wedge cross section $Δ_W$ defined before. We then perform a large $c$ computation of $Δ_R$ and find precise agreement with the holographic computation of 2$Δ_{W}$. This agreement shows another candidate $Δ_R$ as the dual of $Δ_W$ and also supports our holographic conjecture of the new class of generalized reflected entropies.

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preprint2012arXiv

The transition from amorphous to crystalline in Al/Zr multilayers

The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of complementary measurements including grazing incidence X-ray reflectometry, atomic force microscopy, X-ray diffraction and high-resolution transmission electron microscopy. The Al layer thickness transition exhibits the Si doped in Al could not only disfavor the crystallization of Al, but also influence the changing trends of surface roughness and diffraction peak position of phase Al<111>. An interesting feature of the presence of Si in Al layer is that Si could influence the transition process in Al(1%wtSi) layer, in which the critical thickness (1.6 nm) of Al(Pure) layer in Al(Pure)/Zr shifts to 1.8 nm of Al(1.0%wtSi) layer in Al(1.0%wtSi)/Zr multilayer. We also found that the Zr-on-Al interlayer is wider than the Al-on-Zr interlayer in both systems, and the Al layers do not have specific crystal orientation in the directions vertical to the layer from SAED patterns below the thickness (3.0 nm) of Al layers. Above the thickness (3.0 nm) of Al layers, the Al layers are highly oriented in Al<111>, so that the transformation from asymmetrical to symmetrical interlayers can be observed. Based on the analysis of all measurements, we build up a model with four steps, which could explain the Al layer thickness transition process in terms of a critical thickness for the nucleation of Al(Pure) and Al(1%wtSi) crystallites.

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preprint2012arXiv

Thermally induced structural modification in the Al/Zr multilayers

The effect of increasing temperature on the structural stability and interactions of two kinds of Al/Zr (Al(1%wtSi)/Zr and Al(Pure)/Zr) multilayer mirrors are investigated. All Al/Zr multilayers annealed from 200^{\circ}C to 500^{\circ}C, were deposited on Si wafers by using direct-current magnetron sputtering technology. A detailed and consistent picture of the thermally induced changes in the microstructure is obtained using an array of complementary measurements including grazing incidence X-ray reflectance, atomic force microscope, X-ray diffraction and high-resolution transmission electron microscopy. The first significant structural changes of two systems are observed at 250^{\circ}C, characterized by asymmetric interlayers appears at interface. At 290^{\circ}C, the interface consisted of amorphous Al-Zr alloy is transformed to amorphous Al-Zr alloy and cubic ZrAl3 in both systems. By 298^{\circ}C of Al(1%wtSi)/Zr and 295^{\circ}C of Al(Pure)/Zr multilayers, the interfacial phases of Al-Zr alloy transform completely into polycrystalline mixtures of hcp-ZrAl2 and cubic-ZrAl3, which smooth the interface boundary and lower the surface roughness in the multilayers. Up to 500^{\circ}C, the multilayer structure still exists in both systems, and the differences between the asymmetric interlayers are much larger in the multilayers. Finally, we discuss the transformation from symmetric to asymmetric in the annealing process for other systems.

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