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Run-Wei Li

Run-Wei Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

10 published item(s)

preprint2022arXiv

Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic

Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, thereby it is highly desirable to develop new material platforms. Here we report epitaxial growth of La2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with different crystalline orientations fabricated by sequential two-target ablation process using pulsed laser deposition. The LSMIO films exhibit high crystalline quality with homogeneous mixture of LSMO and SIO at atomic level. Ferrimagnetic and insulating transport characteristics are observed, with the temperature-dependent electric resistivity well fitted by Mott variable-range-hopping model. Moreover, the LSMIO films show strong PMA. Through further constructing all perovskite oxide heterostructures of the ferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer, pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Hall effect (SH-AHE) were observed. These results illustrate the potential application of the ferrimagnetic insulator LSMIO in developing all-oxide ultralow-dissipation spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cooperative control of perpendicular magnetic anisotropy via crystal structure and orientation in single-crystal flexible SrRuO3 membranes

Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy (PMA) are highly desirable for developing flexible high-performance spintronic devices. However, it is still challenge to fabricate PMA films through current techniques of direct deposition on polymers. Here, we report a facile method for synthesizing single-crystal freestanding SrRuO3 (SRO) membranes with controlled crystal structure and orientation using water-soluble Ca3-xSrxAl2O6 sacrificial layers. Through cooperative effect of crystal structure and orientation engineering, flexible SrRuO3 membranes reveal highly tunable magnetic anisotropy from in-plane to our-of-plane with a remarkable PMA energy of 7.34*106 erg/cm3. Based on the first-principles calculations, it reveals that the underlying mechanism of PMA modulation is intimately correlated with structure-controlled Ru 4d-orbital occupation, as well as the spin-orbital matrix element differences, dependent on the crystal orientation. In addition, there are no obvious changes of the magnetism after 10,000 bending cycles, indicating an excellent magnetism reliability in the prepared films. This work provides a feasible approach to prepare the flexible oxide films with strong and controllable PMA.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Isostructural Metal-Insulator Transition Driven by Dimensional-Crossover in SrIrO3 Heterostructures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Lateral modulation of magnetic anisotropy in tricolor 3d-5d oxide superlattices

Manipulating magnetic anisotropy (MA) purposefully in transition metal oxides (TMOs) enables the development of oxide-based spintronic devices with practical applications. Here, we report a pathway to reversibly switch the lateral magnetic easy-axis via interfacial oxygen octahedral coupling (OOC) effects in 3d-5d tricolor superlattices, i.e. [SrIrO3,mRTiO3,SrIrO3,2La0.67Sr0.33MnO3]10 (RTiO3: SrTiO3 and CaTiO3). In the heterostructures, the anisotropy energy (MAE) is enhanced over one magnitude to ~106 erg/cm3 compared to La0.67Sr0.33MnO3 films. Moreover, the magnetic easy-axis is reversibly reoriented between (100)- and (110)-directions by changing the RTiO3. Using first-principles density functional theory calculations, we find that the SrIrO3 owns a large single-ion anisotropy due to its strong spin-orbit interaction. This anisotropy can be reversibly controlled by the OOC, then reorient the easy-axis of the superlattices. Additionally, it enlarges the MAE of the films via the cooperation with a robust orbital hybridization between the Ir and Mn atoms. Our results indicate that the tricolor superlattices consisting of 3d and 5d oxides provide a powerful platform to study the MA and develop oxide-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50 m$Ω$ and unconventional magnetoresistance (UCMR) ratio $Δ$$ρ$/$ρ_0$ about $1.2 \times 10^{-4}$, accompanied by the conventional magnetoresistance (CMR). The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y$_3$Fe$_5$O$_{12}$-based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Multi-Fields Modulation of Physical Properties of Oxide Thin Films

Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity, etc. More importantly, the exhibited multifunctionality could be tuned by various external fields, which has enabled demonstration of novel electronic devices. In this article, recent studies of the multi-fields modulation of physical properties in oxide thin films have been reviewed. Some of the key issues and prospects about this field are also addressed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fabrication, properties, and applications of flexible magnetic films

Flexible magnetic devices, i.e., magnetic devices fabricated on flexible substrates, are very attractive in application of detecting magnetic field in arbitrary surface, non-contact actuators, and microwave devices due to the stretchable, biocompatible, light-weight, portable, and low cost properties. Flexible magnetic films are essential for the realization of various functionalities of flexible magnetic devices. To give a comprehensive understanding for flexible magnetic films and related devices, we have reviewed recent advances in the studies of flexible magnetic films including fabrication methods, magnetic and transport properties of flexible magnetic films, and their applications in magnetic sensors, actuators, and microwave devices. Three typical methods were introduced to prepare the flexible magnetic films. Stretching or bending the flexible magnetic films offers a good way to apply mechanical strain on magnetic films, so that magnetic anisotropy, exchanged bias, coercivity, and magnetoresistance can be effectively manipulated. Finally, a series of examples were shown to demonstrate the great potential of flexible magnetic films for future applications.

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