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Zhicheng Zhong

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Published work

32 published item(s)

preprint2022arXiv

Large-scale atomistic simulation of dislocation core structure in face-centered cubic metal with Deep Potential method

The core structure of dislocations is critical to their mobility, cross slip, and other plastic behaviors. Atomistic simulation of the core structure is limited by the size of first-principles density functional theory (DFT) calculation and the accuracy of classical molecular dynamics with empirical interatomic potentials. Here, we utilize a Deep Potential (DP) method learned from DFT calculations to investigate the dislocations of face-centered cubic copper on a large scale and obtain their core structures and energies. The validity of the DP description of the core structure and elastic strain from dislocation is confirmed by a fully discrete Peierls model. Moreover, the DP method can be further extended easily to dislocations with defects such as surface or vacancy, and our study will pave a way in the large-scale atomistic simulation of dislocation on the DFT level.

preprint2022arXiv

Magnetism in doped infinite-layer NdNiO2 studied by combined density functional theory and dynamical mean-field theory

The recent observation of superconductivity in infinite-layer nickelates has brought intense debate on the established knowledge of unconventional superconductivity based on the cuprates. Despite many similarities, the nickelates differ from the cuprates in many characteristics, the most notable one among which is the magnetism. Instead of a canonical antiferromagnetic Mott insulator as the undoped cuprates, from which the superconductivity is generally believed to arise upon doping, the undoped nickelates show no sign of magnetic ordering in experiments. Through a combined density functional theory, dynamical mean-field theory, and model study, we show that although the increased energy splitting between O-$p$ orbital and Cu/Ni-$d$ orbital ($Δ_{dp}$) results in larger magnetic moment in nickelates, it also leads to stronger antiferromagnetism/ferromagnetism competition, and weaker magnetic exchange coupling. Meanwhile, the self-doping effect caused by Nd-$d$ orbital screens the magnetic moment of Ni. The Janus-faced effect of $Δ_{dp}$ and self-doping effect together give a systematic understanding of magnetic behavior in nickelates and explain recent experimental observations.

preprint2022arXiv

Phase diagram of nickelate superconductors calculated by dynamical vertex approximation

We review the electronic structure of nickelate superconductors with and without effects of electronic correlations. As a minimal model we identify the one-band Hubbard model for the Ni 3$d_{x^2-y^2}$ orbital plus a pocket around the $A$-momentum. The latter however merely acts as a decoupled electron reservoir. This reservoir makes a careful translation from {nominal} Sr-doping to the doping of the one-band Hubbard model mandatory. Our dynamical mean-field theory calculations, in part already supported by experiment, indicate that the $Γ$ pocket, Nd 4$f$ orbitals, oxygen 2$p$ and {the} other Ni 3$d$ orbitals are not relevant in the superconducting doping regime. The physics is completely different if topotactic hydrogen is present or the oxygen reduction is incomplete. Then, a two-band physics hosted by the Ni 3$d_{x^2-y^2}$ and 3$d_{3z^2-r^2}$ orbitals emerges. Based on our minimal modeling we calculated the superconducting $T_c$ vs. Sr-doping $x$ phase diagram prior to experiment using the dynamical vertex approximation. For such a notoriously difficult to determine quantity as $T_c$, the agreement with experiment is astonishingly good. The prediction that $T_c$ is enhanced with pressure or compressive strain, has been confirmed experimentally as well. This supports that the one-band Hubbard model plus an electron reservoir is the appropriate minimal model.

preprint2022arXiv

Strain-tunable Dzyaloshinskii--Moriya interaction and skyrmions in two-dimensional Janus Cr$_{2}$X$_{3}$Y$_{3}$ (X, Y = Cl, Br, I, X $\neq$ Y) trihalide monolayers

Recently, great effort has been devoted to the search for two-dimensional (2D) ferromagnetic materials with inherent strong Dzyaloshinskii--Moriya interaction (DMI). Here, through a first-principles approach, we systematically investigate the effect of biaxial strain on the DMI, the Heisenberg exchange interaction, and the magnetic anisotropy energy (MAE) of Janus Cr$_{2}$X$_{3}$Y$_{3}$ (X, Y = Cl, Br, I, X $\neq$ Y) monolayers. Both DMI and MAE can be significantly enhanced by tensile strain, while a reversal of the chirality of DMI in Cr$_{2}$Cl$_{3}$Br$_{3}$ and a switch of MAE from off-plane to in-plane in Cr$_{2}$I$_{3}$Cl$_{3}$ are induced by a compressive strain of $2\%$. Microscopically, DMI and MAE are associated mainly with the large spin--orbit coupling of the heavy nonmagnetic halogen atoms rather than that of the magnetic Cr atoms. In particular, the peculiar magnetic transition of Cr$_{2}$I$_{3}$Cl$_{3}$ is explained by competition between direct exchange and superexchange interactions. Micromagnetic simulations show that a small external magnetic field of 65~mT stabilizes a skyrmion with a diameter of 9.8~nm in the Cr$_2$I$_3$Cl$_3$ monolayer. Our results will provide guidance for further research on DMI and skyrmions in 2D Janus materials, as well as a basis for the potential applications in spintronic devices.

preprint2022arXiv

Structural Phase Transitions in SrTiO3 from Deep Potential Molecular Dynamics

Strontium titanate (SrTiO3) is regarded as an essential material for oxide electronics. One of its many remarkable features is subtle structural phase transition, driven by antiferrodistortive lattice mode, from a high-temperature cubic phase to a low-temperature tetragonal phase. Classical molecular dynamics (MD) simulation is an efficient technique to reveal atomistic features of phase transition, but its application is often limited by the accuracy of empirical interatomic potentials. Here, we develop an accurate deep potential (DP) model of SrTiO3 based on a machine learning method using data from first-principles density functional theory (DFT) calculations. The DP model has DFT-level accuracy, capable of performing efficient MD simulations and accurate property predictions. Using the DP model, we investigate the temperature-driven cubic-to-tetragonal phase transition and construct the in-plane biaxial strain-temperature phase diagram of SrTiO3. The simulations demonstrate that strain-induced ferroelectric phase is characterized by two order parameters, ferroelectric distortion and antiferrodistortion, and the ferroelectric phase transition has both displacive and order-disorder characters. This works lays the foundation for the development of accurate DP models of other complex perovskite materials.

preprint2022arXiv

Ultrafast switching dynamics of the ferroelectric order in stacking-engineered ferroelectrics

The recently discovered ferroelectricity of van der Waals bilayers offers an unconventional route to improve the performance of devices. Key parameters such as switching field and speed depend on the static and dynamic properties of domain walls (DWs). Here we theoretically explore the properties of textures in stacking-engineered ferroelectrics from first principles. Employing a machine-learning potential model, we present results of large-scale atomistic simulations of stacking DWs and Moiré structure of boron nitride bilayers. We predict that the competition between the switching barrier of stable ferroelectric states and the in-plane lattice distortion leads to a DW width of the order of ten nanometers. DWs motion reduces the critical ferroelectric switching field of a monodomain by two orders of magnitude, while high domain-wall velocities allow domain switching on a picosecond-timescale. The superior performance compared to conventional ferroelectrics (or ferromagnets) may enable ultrafast and power-saving non-volatile memories. By twisting the bilayer into a stacking Moiré structure, the ferroelectric transforms into a super-paraelectric since DWs move under ultralow electric fields.

preprint2021arXiv

Cooperative control of perpendicular magnetic anisotropy via crystal structure and orientation in single-crystal flexible SrRuO3 membranes

Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy (PMA) are highly desirable for developing flexible high-performance spintronic devices. However, it is still challenge to fabricate PMA films through current techniques of direct deposition on polymers. Here, we report a facile method for synthesizing single-crystal freestanding SrRuO3 (SRO) membranes with controlled crystal structure and orientation using water-soluble Ca3-xSrxAl2O6 sacrificial layers. Through cooperative effect of crystal structure and orientation engineering, flexible SrRuO3 membranes reveal highly tunable magnetic anisotropy from in-plane to our-of-plane with a remarkable PMA energy of 7.34*106 erg/cm3. Based on the first-principles calculations, it reveals that the underlying mechanism of PMA modulation is intimately correlated with structure-controlled Ru 4d-orbital occupation, as well as the spin-orbital matrix element differences, dependent on the crystal orientation. In addition, there are no obvious changes of the magnetism after 10,000 bending cycles, indicating an excellent magnetism reliability in the prepared films. This work provides a feasible approach to prepare the flexible oxide films with strong and controllable PMA.

preprint2021arXiv

Isostructural Metal-Insulator Transition Driven by Dimensional-Crossover in SrIrO3 Heterostructures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

preprint2021arXiv

Lateral modulation of magnetic anisotropy in tricolor 3d-5d oxide superlattices

Manipulating magnetic anisotropy (MA) purposefully in transition metal oxides (TMOs) enables the development of oxide-based spintronic devices with practical applications. Here, we report a pathway to reversibly switch the lateral magnetic easy-axis via interfacial oxygen octahedral coupling (OOC) effects in 3d-5d tricolor superlattices, i.e. [SrIrO3,mRTiO3,SrIrO3,2La0.67Sr0.33MnO3]10 (RTiO3: SrTiO3 and CaTiO3). In the heterostructures, the anisotropy energy (MAE) is enhanced over one magnitude to ~106 erg/cm3 compared to La0.67Sr0.33MnO3 films. Moreover, the magnetic easy-axis is reversibly reoriented between (100)- and (110)-directions by changing the RTiO3. Using first-principles density functional theory calculations, we find that the SrIrO3 owns a large single-ion anisotropy due to its strong spin-orbit interaction. This anisotropy can be reversibly controlled by the OOC, then reorient the easy-axis of the superlattices. Additionally, it enlarges the MAE of the films via the cooperation with a robust orbital hybridization between the Ir and Mn atoms. Our results indicate that the tricolor superlattices consisting of 3d and 5d oxides provide a powerful platform to study the MA and develop oxide-based spintronic devices.

preprint2021arXiv

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

preprint2020arXiv

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

preprint2020arXiv

Nickelate superconductors -- a renaissance of the one-band Hubbard model

Following the discovery of superconductivity in the cuprates and the seminal work by Anderson, the theoretical efforts to understand high-temperature superconductivity have been focusing to a large extent on a simple model: the one-band Hubbard model. However, superconducting cuprates need to be doped, and the doped holes go into the oxygen orbitals. This requires a more elaborate multi-band model such as the three-orbital Emery model. The recently discovered nickelate superconductors appear, at first glance, to be even more complicated multi-orbital systems. Here, we analyse this multi-orbital system and find that it is instead the nickelates which can be described by a one-band Hubbard model, albeit with an additional electron reservoir and only around the superconducting regime. Our calculations of the critical temperature Tc are in good agreement with experiment, and show that optimal doping is slightly below the 20% Sr-doping of Ref. 11. Even more promising than 3d nickelates are 4d palladates.

preprint2020arXiv

Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

preprint2020arXiv

Polarity induced electronic and atomic reconstruction at NdNiO2/SrTiO3 interfaces

Superconductivity has recently been observed in Sr-doped NdNiO2 films grown on SrTiO3. Whether it is caused by or related to the interface remains an open question. To address this issue, we use density functional theory calculation and charge transfer self-consistent model to study the effects of polar discontinuity on the electronic and atomic reconstruction at the NdNiO2/SrTiO3 interface. We find that sharp interface with pure electronic reconstruction only is energetically unfavorable, and atomic reconstruction is unavoidable. We further propose a possible interface configuration that contain residual apical oxygen. These oxygen atoms lead to hybrids of dz2 and dx2-y2 states at the Fermi level, which weaken the single-band feature and may be detrimental to superconductivity.

preprint2020arXiv

Topotactic hydrogen in nickelate superconductors and akin infinite-layer oxides ABO2

Superconducting nickelates appear to be difficult to synthesize. Since the chemical reduction of ABO3 (A: rare earth; B transition metal) with CaH2 may result in both, ABO2 and ABO2H, we calculate the topotactic H binding energy by density functional theory (DFT). We find intercalating H is energetically favorable for LaNiO2 but not for Sr-doped NdNiO2. This has dramatic consequences for the electronic structure as determined by DFT+dynamical mean field theory: that of 3d9 LaNiO2 is similar to (doped) cuprates, 3d8 LaNiO2H is a two-orbital Mott insulator. Topotactical H might hence explain why some nickelates are superconducting and others are not.

preprint2019arXiv

Emergent magnetic state in (111)-oriented quasi-two-dimensional spinel oxides

We report on the emergent magnetic state of (111)-oriented CoCr2O4 ultrathin films sandwiched by Al2O3 in the quantum confined geometry. At the two-dimensional crossover, polarized neutron reflectometry reveals an anomalous enhancement of the total magnetization compared to the bulk value. Synchrotron x-ray magnetic circular dichroism (XMCD) demonstrates the appearance of long-range ferromagnetic ordering of spins on both Co and Cr sublattices. Brillouin function analyses further corroborates that the observed phenomena are due to the strongly altered magnetic frustration, manifested by the onset of a Yafet-Kittel type ordering as the new ground state in the ultrathin limit, which is unattainable in the bulk.

preprint2016arXiv

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

preprint2016arXiv

Tuning the work function in transition metal oxides and their heterostructures

The development of novel functional materials in experimental labs combined with computer-based compound simulation brings the vision of materials design on a microscopic scale continuously closer to reality. For many applications interface and surface phenomena rather than bulk properties are key. One of the most fundamental qualities of a material-vacuum interface is the energy required to transfer an electron across this boundary, i.e. the work function. It is a crucial parameter for numerous applications, including organic electronics, field electron emitters, and thermionic energy converters. Being generally very resistant to degradation at high temperatures, transition metal oxides present a promising materials class for such devices. We have performed a systematic study for perovskite oxides that provides reference values and, equally important, reports on materials trends and the tunability of work functions. Our results identify and classify dependencies of the work function on several parameters including specific surface termination, surface reconstructions, oxygen vacancies, and heterostructuring.

preprint2015arXiv

A route to room temperature ferromagnetic ultrathin SrRuO$_3$ films

Experimental efforts to stabilize ferromagnetism in ultrathin films of transition metal oxides have so far failed, despite expectations based on density functional theory (DFT) and DFT+U. Here, we investigate one of the most promising materials, SrRuO$_3$, and include correlation effects beyond DFT by means of dynamical mean field theory. In agreement with experiment we find an intrinsic thickness limitation for metallic ferromagnetism in SrRuO$_3$ thin films. Indeed, we demonstrate that the realization of ultrathin ferromagnetic films is out of reach of standard thin-film techniques. Proposing charge carrier doping as a new route to manipulate thin films, we predict room temperature ferromagnetism in electron-doped SrRuO$_3$ ultra thin films.

preprint2015arXiv

Giant switchable Rashba effect in oxide heterostructures

One of the most fundamental phenomena and a reminder of the electron's relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction, hardly discernible in experiment. Interfacing a ferroelectric, BaTiO$_3$, and a heavy 5$d$ metal with a large spin-orbit coupling, Ba(Os,Ir)O$_3$, we show that giant Rashba spin splittings are indeed possible and even fully controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, also induces a large Os-O distortion. The BaTiO$_3$/BaOsO$_3$ heterostructure is hence the ideal test station for studying the fundamentals of the Rashba effect. It allows intriguing application such as the Datta-Das transistor to operate at room temperature.

preprint2014arXiv

First Principles Prediction of Topological Phases in Thin Films of Pyrochlore Iridates

Topological phases have attracted much interest in recent years. While there are a number of three-dimensional materials exhibiting topological properties, there are relatively few two-dimensional examples aside from the well-known quantum Hall systems. Here we make materials-specific predictions for topological phases using density functional theory combined with Hartree-Fock theory that includes the full orbital structure of the relevant iridum $d$-orbitals and the strong but finite spin-orbit coupling strength. We find Y$_2$Ir$_2$O$_7$ bilayer and trilayer films grown along the [111] direction can support topological metallic phases with a direct gap of up to 0.02 eV, which could potentially bring transition metal oxides to the fore as a new class of topological materials with potential applications in oxide electronics.

preprint2013arXiv

Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer

Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a 2DEG -the SrTiO3(110)-(4 x 1) surface, natively terminated with one monolayer of chemically-inert titania. Oxygen vacancies induced by synchrotron radiation migrate under- neath this overlayer, this leads to a confining potential and electron doping such that a 2DEG develops. Our angular resolved photoemission spectroscopy (ARPES) and theoretical results show that confinement along (110) is strikingly different from a (001) crystal orientation. In particular the quantized subbands show a surprising "semi-heavy" band, in contrast to the analogue in the bulk, and a high electronic anisotropy. This anisotropy and even the effective mass of the (110) 2DEG is tunable by doping, offering a high flexibility to engineer the properties of this system.

preprint2013arXiv

Electronics with correlated oxides: SrVO$_3$/SrTiO$_3$ as a Mott transistor

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn triggers a Mott-Hubbard transition. Two layers of SrVO$_3$ are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also turn the insulator into a metal, so that a transistor with ideal on-off (metal-insulator) switching properties is realized.

preprint2013arXiv

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.

preprint2013arXiv

Quantum confinement in perovskite oxide heterostructures: tight binding instead of nearly free electron picture

Most recently, orbital-selective quantum well states of $d$ electrons have been experimentally observed in SrVO$_3$ ultrathin films [K. Yoshimatsu et. al., Science 333, 319 (2011)] and SrTiO$_3$ surfaces [A. F. Santander-Syro et. al., Nature 469, 189 (2011)]. Hitherto, one tries to explain these experiments by a nearly free electron (NFE) model, an approach widely used for delocalized electrons in semiconductor heterostructures and simple metal films. We show that a tight binding (TB) model is more suitable for describing heterostructures with more localized $d$ electrons. In this paper, we construct from first principles simple TB models for perovskite oxide heterostructures and surfaces. We show that the TB model provides a simple intuitive physical picture and yields, already with only two parameters, quantitatively much more reliable results, consistent with experiment.

preprint2013arXiv

Rock-salt SnS and SnSe: Native Topological Crystalline Insulators

Unlike time-reversal topological insulators, surface metallic states with Dirac cone dispersion in the recently discovered topological crystalline insulators (TCIs) are protected by crystal symmetry. To date, TCI behaviors have been observed in SnTe and the related alloys Pb$_{1-x}$Sn$_{x}$Se/Te, which incorporate heavy elements with large spin-orbit coupling (SOC). Here, by combining first-principles and {\it ab initio} tight-binding calculations, we report the formation of a TCI in the relatively lighter rock-salt SnS and SnSe. This TCI is characterized by an even number of Dirac cones at the high-symmetry (001), (110) and (111) surfaces, which are protected by the reflection symmetry with respect to the ($\bar{1}$10) mirror plane. We find that both SnS and SnSe have an intrinsically inverted band structure and the SOC is necessary only to open the bulk band gap. The bulk band gap evolution upon volume expansion reveals a topological transition from an ambient pressure TCI to a topologically trivial insulator. Our results indicate that the SOC alone is not sufficient to drive the topological transition.

preprint2013arXiv

Structural, Magnetic, and Electrical Properties of Li2Ir1-xRuxO3

The crystal structure, resistivity, and magnetic susceptibility of the Li2Ir1-xRuxO3 (x = 0-1) polycrystals have been investigated. We found that the parent antiferromagnetic phase disappears for x > 0.2 and bond dimers appear in the averaged structure for x > 0.5 and likely fluctuate for much smaller x. Unexpectedly, this system remains insulating for all the doping levels, in sharp contrast with the robust metallic state found in Sr2Ir1-xRuxO4. These results demonstrate that the essential physics of the doped A2IrO3 (A = Li, Na) system deviates significantly from the common one-band jeff=1/2 spin-orbit model.

preprint2012arXiv

Microscopic understanding of the orbital splitting and its tuning at oxide interfaces

By means of a Wannier projection within the framework of density functional theory, we are able to identify the modified c-axis hopping and the energy mismatch between the cation bands as the main source of the $t_{2g}$ splitting around the $Γ$ point for oxide heterostructures, excluding previously proposed mechanisms such as Jahn-Teller distortions or electric field asymmetries. Interfacing LaAlO$_3$, LaVO$_3$, SrVO$_3$ and SrNbO$_3$ with SrTiO$_3$ we show how to tune this orbital splitting, designing heterostructures with more $d_{xy}$ electrons at the interface. Such an "orbital engineering" is the key for controlling the physical properties at the interface of oxide heterostructures.

preprint2012arXiv

Prediction of thickness limits of ideal polar ultrathin films

Competition between electronic and atomic reconstruction is a constantly recurring theme in transition-metal oxides. We use density functional theory calculations to study this competition for a model system consisting of a thin film of the polar, infinite-layer structure ACuO2 (A=Ca, Sr, Ba) grown on a nonpolar, perovskite SrTiO3 substrate. A transition from the bulk planar structure to a chain-type thin film accompanied by substantial changes to the electronic structure is predicted for a SrCuO2 film fewer than five unit cells thick. An analytical model explains why atomic reconstruction becomes more favorable than electronic reconstruction as the film becomes thinner, and suggests that similar considerations should be valid for other polar films.

preprint2012arXiv

Theory of spin-orbit coupling at LaAlO3/SrTiO3 interfaces and SrTiO3 surfaces

The theoretical understanding of the spin-orbit coupling (SOC) effects at LaAlO$_{3}$/SrTiO$_{3}$ interfaces and SrTiO$_{3}$ surfaces is still in its infancy. We perform first-principles density-functional-theory calculations and derive from these a simple tight-binding Hamiltonian, through a Wannier function projection and group theoretical analysis. We find striking differences to the standard Rashba theory for spin-orbit coupling in semiconductor heterostructures due to multi-orbital effects: by far the biggest SOC effect is at the crossing point of the $xy$ and $yz$ (or $zx$) orbitals; and around the $Γ$ point a Rashba spin splitting with a cubic dependence on the wave vector $\vec{k}$ is possible.

preprint2011arXiv

Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

preprint2010arXiv

Polarity-induced oxygen vacancies at LaAlO3|SrTiO3 interfaces

Using first-principles density functional theory calculations, we find a strong position and thickness dependence of the formation energy of oxygen vacancies in LaAlO3|SrTiO3 (LAO|STO) multilayers and interpret this with an analytical capacitor model. Oxygen vacancies are preferentially formed at p-type SrO|AlO2 rather than at n-type LaO|TiO2 interfaces; the excess electrons introduced by the oxygen vacancies reduce their energy by moving to the n-type interface. This asymmetric behavior makes an important contribution to the conducting (insulating) nature of n-type (p-type) interfaces while providing a natural explanation for the failure to detect evidence for the polar catastrophe in the form of core level shifts.