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Rostam Moradian

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Published work

10 published item(s)

preprint2020arXiv

Comment on: Locally self-consistent embedding approach for disordered electronic systems

We comment on article by Yi Zhang , Hanna Terletska, Ka-Ming Tam, Yang Wang, Markus Eisenbach, Liviu Chioncel, and Mark Jarrell [Phys. Rev. B {\bf 100}, 054205 (2019)]\cite{Zhang} in which to study substitution disordered systems, they presented an embedding scheme for the locally self-consistent method. Here we show that their methods is a truncated case of our super-cell approximation, achieved by neglecting super-cell wave vectors dependence on self-energy $Σ_{sc}({\bf K}_{n},E)$ and replacing them by a local on-site self-energy, $Σ_{sc}({\bf K}_{n},E)=Σ_{sc}(L,L,E)$ in our articles\cite{Moradian01, Moradian02, Moradian03}. Also their real and k-space self-energies in the limit of the number of super-cell sites, $N_{c}$, approaching the number of lattice sites, N, do not recover exact self-energies $Σ(l, l', E)$ and $Σ({\bf k}, E)$. For highlighting advantages of our methods with respect to other approximations such as dynamical cluster approximation (DCA)\cite{Jarrell} in capturing electron localization, we apply our real space super-cell approximation (SCA), and super-cell local self-energy approximation (SCLSA) to one and two dimensional substitution disorder alloy systems. Our electron localization probability calculations for these systems determine non zero values that indicate electrons localization.

preprint2020arXiv

One-step fabrication of flexible, cost/time effective and high energy storage graphene-based supercapacitor

The advances in micro-size and in-plane supercapacitors lead to produce the miniaturizing energy storage devices in portable and bendable electronics. Micro-supercapacitors have unique electrochemical performance, such as high power density, fast charging, long cycle life, and high safety. The reduction time and cost in the fabrication processes of micro-supercapacitors are important factors in micro-fabrication technology. In this work, a simple, scalable and cost-effective fabrication of interdigitated reduced graphene oxide@polyaniline flexible micro-supercapacitors is presented. We found that in fabricating the interdigitated microelectrode patterns on PET substrate; the reduction of graphene oxide and growth of conducting polymer are rapidly performed simultaneously in one step by laser irradiation. The capacitance was 72 mF/cm2 at 0.035mA/cm2 current density. These high capacitance micro-supercapacitors demonstrate good stability and more than 93.5% of the capacitance retain after 1000 cycles at 0.7 mA/cm2 current density.

preprint2020arXiv

Superconducting Symmetry Phases and Dominant bands in (Ca-) Intercalated AA- Bilayer Graphene

Built on a realistic multiband tight-binding model, mirror symmetry is used to map a calcium-intercalated bilayer graphene Hamiltonian into two independent single layer graphene-like Hamiltonians with renormalized hopping. The quasiparticles exhibit two types of chirality. Here a quasi-particle consists of two electrons from opposing layers where possess an additional quantum number called "cone index" which can be regarded as the eigenvalue of mirror symmetry operations. To obtain tight-binding parameters, both effective monolayer Schrodinger equations are solved analytically and fitted to first-principles band structure results. Two quasi-particles (four electrons) can team up to build a Cooper pair with even or odd chirality. Treatment of the pairing Hamiltonian leads to two decoupled gap equations. The pairing of quasi-particles with different cone indexes is forbidden. The decoupled gap equations are solved analytically to obtain all the possible superconducting phases. Two nearly "flat bands" crossing the Fermi energy, each related to the graphene-like structures, are responsible for two distinct superconductivity gaps that emerge. Depending on how much these bands are affected by the intercalant and which is closer to the Fermi energy, distorted s-wave or d-wave superconductivity may become dominant. Numerical calculations reveal that d-wave superconductivity is dominant in both sectors. For these two dominant phases, within the range of 0-6 K which superconductivity has been observed, numerically the transition from single-gap to dual-gap superconductivity is possible. Adopting the two-gap viewpoint of superconductivity in C$_6$CaC$_6$, the dominant $d$-wave states should have the same critical temperature. Around $T_c=2K$ these two relations intersect, otherwise, superconductivity has been realized just in one of these two sectors and disappears in the other one.

preprint2014arXiv

Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r^3 power law decay for the long-distance behavior of the screened coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of biased AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when $μ$ exceeds $\sqrt{2}γ$, are similar to that of doped SLG only depending on doping. While for $μ<\sqrt{2}γ$, its screening properties are a combination of SLG and AA-stacked screening properties and they are determined by doping and the interlayer hopping energy.

preprint2014arXiv

Local moment formation in bilayer graphene

The local properties of bilayer graphene (BLG) due to the spatial inhomogeneity of its sublattices are of interest. We apply Anderson impurity model to consider the local moment formation on a magnetic impurity which could be adsorbed on different sublattices of BLG. We find different features for the impurity magnetization when it is adsorbed A and B sublattices. The impurity adsorbed on A sublattice can magnetize even when the impurity level is above the Fermi level and the on-site coulomb energy is very small. But when the impurity is adsorbed on B sublattice the magnetization is possible for limited values of the impurity level and the on-site coulomb energy. This is due to different local density of the low energy states at A and B sublattices which originates from their spatial inhomogeneity. Also we show that electrical controlling the magnetization of adatoms besides it's inhomogeneity in BLG allow for possibility of using BLG in spintronic devices with higher potential than graphene.

preprint2014arXiv

Magnetism of an adatom on biased AA-stacked bilayer graphene

We study magnetism of an adatom adsorbed on AA-stacked bilayer graphene (BLG) in both unbiased and biased cases, using the Anderson impurity model. We find different magnetic phase diagrams for the adatom, depending on the energy level of the adatom, which varies from the magnetic phase diagram of adatom in normal metals to that in graphene. This is due to the individual energy dependence of the density of states (DOS) of AA-stacked BLG and anomalous broadening of the adatom energy level. Furthermore we investigate the effect of a bias voltage on DOS of AA-stacked and show that the magnetization of the adatom can be controlled by applying the bias voltage. This allows for possibility of using AA-stacked BLG in spintronic devices.

preprint2014arXiv

RKKY interaction in bilayer graphene

We study the RKKY interaction between two magnetic impurities located on same layer (intralayer case) or on different layers (interlayer case) in undoped bilayer graphene in the four-bands model, by directly calculating the Green functions in the eigenvalues and eigenvectors representation. Our results show that both intra- and interlayer RKKY interactions between two magnetic impurities located on same (opposite) sublattice are always ferromagnetic (antiferromagnetic). Furthermore we find unusual long-distance decay of the RKKY interaction in BLG. The intralyer RKKY interactions between two magnetic impurities located on same sublattice, $J^{A_{n}A_{n}}(\mathbf{R})$ and $J^{B_{n}B_{n}}(\mathbf{R)}$, decay closely as $1/R^{6}$ and $1/R^{2}$ at large impurity distances respectively, but when they are located on opposite sublattices the RKKY interactions exhibit $1/R^{4}$ decays approximately. In the interlayer case, the RKKY interactions between two magnetic impurities located on same sublattice show a decay close to $1/R^{4}$ at large impurity distances, but if two magnetic impurities be on opposite sublattices the RKKY interactions, $J^{A_{1}B_{2}}(\mathbf{R})$ and $J^{B_{1}A_{2}}(\mathbf{R)}$, decay closely as $1/R^{6}$ and $1/R^{2}$ respectively. Both intra- and interlayer RKKY interactions have anisotropic oscillatory factors which for intralayer case is equal to that for single layer graphene. Our results at weak and strong interlayer coupling limits reduce to the RKKY interaction of SLG and that of BLG in the two-bands approximation respectively.

preprint2005arXiv

Ferromagnetic semiconductor single wall carbon nanotube

Possibility of a ferromagnetic semiconductor single wall carbon nanotube (SWCNT), where ferromagnetism is due to coupling between doped magnetic impurity on a zigzag SWCNT and electrons spin, is investigate. We found, in the weak impurity-spin couplings, at low impurity concentrations the spin up electrons density of states remain semiconductor while the spin down electrons density of states shows a metallic behavior. By increasing impurity concentrations the semiconducting gap of spin up electrons in the density of states is closed, hence a semiconductor to metallic phase transition is take place. In contrast, for the case of strong coupling, spin up electrons density of states remain semiconductor and spin down electron has metallic behavior. Also by increasing impurity spin magnitude, the semiconducting gap of spin up electrons is increased.

preprint2005arXiv

Validity of Anderson's theorem for s-wave superconductors

We investigate validity of Anderson's theorem (AT) for disordered s-wave superconductors in a negative U Hubbard model with random on-site energies, $ε_{i}$. The superconducting critical temperature, $T_{c}$, is calculated in the coherent potential approximation (CPA) as a function of impurity concentration, $c$, the random potentials for different band filling. In contradiction to Anderson's theorem, we found that $T_{c}$ is dramatically sensitive with respect to $c$ and $ε_{i}$. Our results shows that for low impurity concentrations and weak on-site energies, $ε_{i}$, the AT is valid, while in the strong scattering limit even for low impurity concentration, $T_{c}$ is very small with respect to the clean system and by increasing $c$ it is completely suppressed, hence AT is violated in this regime.

preprint2004arXiv

Disordered Carbon nanotube alloys in the Effect Medium Super Cell Approximation

We investigate a disordered single-walled carbon nanotube (SWCNT) in an effective medium super cell approximation (EMSCA). First type of disorder that we consider is the presence of vacancies. Our results show that the vacancies induce some bound states on their neighbor host sites, leading to the creation of a band around the Fermi energy in the SWCNT average density of states.Second type of disorder considered is a substitutional $B_{cb}N_{cn}C_{1-cb-cn}$ alloy due to it's applications in hetrojunctions. We found that for a fixed boron (nitrogen) concentration, by increasing the nitrogen (boron) concentration the averaged semiconducting gap, $E_{g}$, decreases and at a critical concentration it disappears. A consequence of our results for nano electronic devices is that by changing the boron(nitrogen) concentration, one can make a semiconductor SWCNT with a pre-determined energy gap.