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Rohan Mishra

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.ao-ph quant-ph

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preprint2026arXiv

Unveiling the Shortwave Absorption Spectra of Alumina Aerosols: Implications for Solar Radiation Modification

Alumina is proposed for Stratospheric Aerosol Injection (SAI)-based solar radiation modification due to its presumed ability to scatter sunlight strongly while absorbing weakly. Alumina is assigned negligible solar shortwave absorption in climate models; this assumption is not validated owing to technological challenges in quantifying its weak absorption signals. We report alumina's shortwave imaginary refractive index $k$, a determinant of its absorption strength, using sensitive in situ photoacoustic spectrometry, finding values ranging from $1.4 \times 10^{-4}$ to $1.2 \times 10^{-3}$. Particle-scale electron energy-loss spectroscopy provided independent validation and revealed that the non-ideal absorption arises from oxygen vacancy defects in the alumina's crystal structure. Aerosol chemistry climate model simulations to evaluate shortwave absorption radiative effects revealed insignificant impacts on radiative forcing and stratospheric warming. Our findings indicate that alumina's shortwave absorption, previously reported as a source of uncertainty, is unlikely to affect SAI impact calculations.

preprint2021arXiv

Modeling Temperature, Frequency, and Strain Effects on the Linear Electro-Optic Coefficients of Ferroelectric Oxides

An electro-optic modulator offers the function of modulating the propagation of light in a material with electric field and enables seamless connection between electronics-based computing and photonics-based communication. The search for materials with large electro-optic coefficients and low optical loss is critical to increase the efficiency and minimize the size of electro-optic devices. We present a semi-empirical method to compute the electro-optic coefficients of ferroelectric materials by combining first-principles density-functional theory calculations with Landau-Devonshire phenomenological modeling. We apply the method to study the electro-optic constants, also called Pockels coefficients, of three paradigmatic ferroelectric oxides: BaTiO3, LiNbO3, and LiTaO3. We present their temperature-, frequency- and strain-dependent electro-optic tensors calculated using our method. The predicted electro-optic constants agree with the experimental results, where available, and provide benchmarks for experimental verification.

preprint2020arXiv

Highly tunable polarization-engineered two-dimensional electron gas in $ε$-AlGaO3 / $ε$-Ga2O3 heterostructures

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$-Ga2O3/$ε$-AlGaO3/$ε$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $ε$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.

preprint2020arXiv

Machine learning formation enthalpies of intermetallics

Developing fast and accurate methods to discover intermetallic compounds is relevant for alloy design. While density-functional-theory (DFT)-based methods have accelerated design of binary and ternary alloys by providing rapid access to the energy and properties of the stable intermetallics, they are not amenable for rapidly screening the vast combinatorial space of multi-principal element alloys (MPEAs). Here, a machine-learning model is presented for predicting the formation enthalpy of binary intermetallics and used to identify new ones. The model uses easily accessible elemental properties as descriptors and has a mean absolute error (MAE) of 0.025 eV/atom in predicting the formation enthalpy of stable binary intermetallics reported in the Materials Project database. The model further predicts stable intermetallics to form in 112 binary alloy systems that do not have any stable intermetallics reported in the Materials Project database. DFT calculations confirm one such stable intermetallic identified by the model, NbV2 to be on the convex hull. The model trained with binary intermetallics can also predict ternary intermetallics with similar accuracy as DFT, which suggests that it could be extended to identify compositionally complex intermetallics that may form in MPEAs.

preprint2016arXiv

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched STiO$_3$ barrier, reaching values of up to 350% at T=5 K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T>200 K. Our results suggest that by employing a better lattice matched ferromagnetic electrode and thus reducing the structural defects in the strontium stannate barrier even larger TMR ratios might be possible in the future.

preprint2013arXiv

p-type doping in CVD grown MoS2 using Nb

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

preprint2011arXiv

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.