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Arunava Gupta

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Published work

12 published item(s)

preprint2016arXiv

Detection of DC currents and resistance measurements in longitudinal spin Seebeck effect experiments on Pt/YIG and Pt/NFO

In this work we investigated thin films of the ferrimagnetic insulators YIG and NFO capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage is the quantity investigated in LSSE measurements (in the range of μV). Here, we present the directly detected DC current (in the range of nA) as an alternative quantity. Furthermore, we investigate the resistance of the Pt layer in the LSSE configuration. We found an influence of the test current on the resistance. The typical shape of the LSSE curve varies for increasing test currents.

preprint2016arXiv

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched STiO$_3$ barrier, reaching values of up to 350% at T=5 K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T>200 K. Our results suggest that by employing a better lattice matched ferromagnetic electrode and thus reducing the structural defects in the strontium stannate barrier even larger TMR ratios might be possible in the future.

preprint2016arXiv

The role of spin fluctuations in the conductivity of CrO$_2$

We present a time-resolved terahertz spectroscopic study of the half-metallic ferromagnet CrO$_2$. The ultrafast conductivity dynamics excited by an optical pump displays a very short (several picoseconds) and a very long (several hundred picoseconds) characteristic time scales. We attribute the former to the electron-phonon relaxation and the latter to the spin-lattice relaxation. We use this distinction to quantify the relative contribution of the scattering by spin fluctuations to the resistivity of CrO$_2$: we find that they contribute less than one half of all scattering events below room temperature. This contribution rises to $\sim70$ % as the temperature approaches $T_C$=390 K. The small effect of spin fluctuations on the resistivity is unexpected in the light of the proposed double-exchange nature of the electronic and magnetic properties of CrO$_2$.

preprint2015arXiv

Static magnetic proximity effect in Pt/NiFe2O4 and Pt/Fe bilayers investigated by x-ray resonant magnetic reflectivity

The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity was measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio for Pt/Fe bilayers are independent of the Pt thickness between 1.8 and 20 nm. By comparison with ab initio calculations, the maximum magnetic moment per spin polarized Pt atom at the interface is determined to be $(0.6\pm0.1)\,μ_{B}$ for Pt/Fe. For Pt/NiFe2O4 the asymmetry ratio drops below the sensitivity limit of $0.02\,μ_{B}$ per Pt atom. Therefore, we conclude, that the longitudinal spin Seebeck effect recently observed in Pt/NiFe2O4 is not influenced by a proximity induced anomalous Nernst effect.

preprint2014arXiv

Longitudinal spin Seebeck effect contribution in transverse spin Seebeck effect experiments in Pt/YIG and Pt/NFO

We investigate the inverse spin Hall voltage of a 10nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 (YIG) and NiFe2O4 (NFO) with a temperature gradient in the film plane. We observe characteristics typical of the spin Seebeck effect, although we do not observe a change of sign of the voltage at the Pt strip when it is moved from hot to cold side, which is believed to be the most striking feature of the transverse spin Seebeck effect. Therefore, we relate the observed voltages to the longitudinal spin Seebeck effect generated by a parasitic out-of-plane temperature gradient, which can be simulated by contact tips of different material and heat conductivities and by tip heating. This work gives new insights into the interpretation of transverse spin Seebeck effect experiments, which are still under discussion.

preprint2013arXiv

Electronic Structure of Magnetic Semiconductor CdCr_2Te_4: A Possible Spin-Dependent Symmetry Filter

We present a theoretical investigation of the electronic and magnetic structure of spinel CdCr_2Te_4 using density functional theory, its extensions via onsite Hubbard U interactions, and a screened-hybrid-functional exchange potential. We find that the ground state is semiconducting within the latter approach, and within this magnetic-semiconducting system we compute the complex band structure, finding a slowly decaying evanescent $\tildeΔ_1$ state possibly suitable for realizing a spin-dependent symmetry filter effect.

preprint2013arXiv

Epitaxial Growth of Spinel Cobalt Ferrite Films on MgAl$_2$O$_4$ Substrates by Direct Liquid Injection Chemical Vapor Deposition

The direct liquid injection chemical vapor deposition (DLI-CVD) technique has been used for the growth of cobalt ferrite (CFO) films on (100)-oriented MgAl$_2$O$_4$ (MAO) substrates. Smooth and highly epitaxial cobalt ferrite thin films, with the epitaxial relationship $\mathrm{MAO} (100)\:[001] \parallel \mathrm{CFO} (100)\:[001]$, are obtained under optimized deposition conditions. The films exhibit bulk-like structural and magnetic properties with an out-of-plane lattice constant of $8.370\;\mathrmÅ$ and a saturation magnetization of $420\;\mathrm{kA/m}$ at room temperature. The Raman spectra of films on MgAl$_2$O$_4$ support the fact that the Fe$^{3+}$- and the Co$^{2+}$-ions are distributed in an ordered fashion on the B-site of the inverse spinel structure. The DLI-CVD technique has been extended for the growth of smooth and highly oriented cobalt ferrite thin films on a variety of other substrates, including MgO, and piezoelectric lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate substrates.

preprint2013arXiv

Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering

We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial growth and low roughness and a similar quality as in films grown by pulsed laser deposition. Electrical conductivity measurements showed high room temperature resistivity (12 Ohmm), but low activation energy, indicating an extrinsic transport mechanism. A band gap of about 1.55 eV was found by optical spectroscopy. Detailed x-ray spectroscopy studies confirmed the samples to be ferrimagnetic with fully compensated Fe moments. By comparison with multiplet calculations of the spectra we found that the cation valencies are to a large extent Ni2+ and Fe3+.

preprint2013arXiv

Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet, and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin mixing conductance of $4\times10^{14}\;\mathrm{Ω^{-1}m^{-2}}$ we obtain a spin Hall angle of $0.11\pm0.08$ and a spin diffusion length of $(1.5\pm0.5)\;\mathrm{nm}$ for Pt in our thin film samples.

preprint2013arXiv

Thermally driven spin and charge currents in thin NiFe2O4/Pt films

We present results on the longitudinal spin Seebeck effect (LSSE) shown by semiconducting ferrimagnetic NiFe2O4/Pt films from room temperature down to 50K base temperature. To the best of our knowledge, this is the first observation of spin caloric effect in NiFe2O4 thin films. The temperature dependence of the conductivity has been studied in parallel to obtain information about the origin of the electric potentials detected at the Pt coverage of the ferrimagnet in order to distinguish the LSSE from the anomalous Nernst effect. Furthermore, the dependence of the LSSE on temperature gradients as well as the influence of an external magnetic field direction is investigated.

preprint2010arXiv

Ferroelectric domain scaling and electronic properties in ultrathin BiFeO3 films on vicinal substrates

We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3 bottom layer using pulsed laser deposition technique. These films have fractal domain patterns and the domain width scales closely with the square root of film thickness, in accordance with the Landau-Lifschitz-Kittel (LLK) law. The Switching Spectroscopy Piezo-response Force Microscopy provides clear evidence for the ferroelectric switching behavior in all the films. Using Quasi-particle Self-consistent GW (QPGW) approximation we have investigated physical parameters relevant for direct tunneling behavior, namely the effective mass and effective barrier height of electrons. For rhombohedral BFO, we report a large effective barrier height value of 3.6 eV, which is in reasonable agreement with nanoscale transport measurements. QPGW investigations into the tetragonal BFO structure with P4mm symmetry revealed a barrier height of 0.38 eV, significantly lower compared to its rhombohedral counterpart. This difference has very significant implications on the transport properties of nearly tetragonal BFO phase.

preprint2010arXiv

Nanoscale switching characteristics of nearly tetragonal BiFeO3 thin films

We have investigated the nanoscale switching properties of strain-engineered BiFeO3 thin films deposited on LaAlO3 substrates using a combination of scanning probe techniques. Polarized Raman spectral analysis indicate that the nearly-tetragonal films have monoclinic (Cc) rather than P4mm tetragonal symmetry. Through local switching-spectroscopy measurements and piezoresponse force microscopy we provide clear evidence of ferroelectric switching of the tetragonal phase but the polarization direction, and therefore its switching, deviates strongly from the expected (001) tetragonal axis. We also demonstrate a large and reversible, electrically-driven structural phase transition from the tetragonal to the rhombohedral polymorph in this material which is promising for a plethora of applications.