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Researcher profile

Arunava Gupta

Arunava Gupta contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Electronic Structure of Magnetic Semiconductor CdCr_2Te_4: A Possible Spin-Dependent Symmetry Filter

We present a theoretical investigation of the electronic and magnetic structure of spinel CdCr_2Te_4 using density functional theory, its extensions via onsite Hubbard U interactions, and a screened-hybrid-functional exchange potential. We find that the ground state is semiconducting within the latter approach, and within this magnetic-semiconducting system we compute the complex band structure, finding a slowly decaying evanescent $\tildeΔ_1$ state possibly suitable for realizing a spin-dependent symmetry filter effect.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ferroelectric domain scaling and electronic properties in ultrathin BiFeO3 films on vicinal substrates

We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3 bottom layer using pulsed laser deposition technique. These films have fractal domain patterns and the domain width scales closely with the square root of film thickness, in accordance with the Landau-Lifschitz-Kittel (LLK) law. The Switching Spectroscopy Piezo-response Force Microscopy provides clear evidence for the ferroelectric switching behavior in all the films. Using Quasi-particle Self-consistent GW (QPGW) approximation we have investigated physical parameters relevant for direct tunneling behavior, namely the effective mass and effective barrier height of electrons. For rhombohedral BFO, we report a large effective barrier height value of 3.6 eV, which is in reasonable agreement with nanoscale transport measurements. QPGW investigations into the tetragonal BFO structure with P4mm symmetry revealed a barrier height of 0.38 eV, significantly lower compared to its rhombohedral counterpart. This difference has very significant implications on the transport properties of nearly tetragonal BFO phase.

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preprint2010arXiv

Nanoscale switching characteristics of nearly tetragonal BiFeO3 thin films

We have investigated the nanoscale switching properties of strain-engineered BiFeO3 thin films deposited on LaAlO3 substrates using a combination of scanning probe techniques. Polarized Raman spectral analysis indicate that the nearly-tetragonal films have monoclinic (Cc) rather than P4mm tetragonal symmetry. Through local switching-spectroscopy measurements and piezoresponse force microscopy we provide clear evidence of ferroelectric switching of the tetragonal phase but the polarization direction, and therefore its switching, deviates strongly from the expected (001) tetragonal axis. We also demonstrate a large and reversible, electrically-driven structural phase transition from the tetragonal to the rhombohedral polymorph in this material which is promising for a plethora of applications.

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