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Roberto D'Agosta

Roberto D'Agosta contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Thermoelectric transport within density functional theory

A new formalism to describe steady-state electronic and thermal transport in the framework of density functional theory is presented. A one-to-one correspondence is proven between the three basic variables of the theory, i.e., the density on as well as the electrical and heat currents through the junction, and the three basic potentials, i.e., the local potential in as well as the DC bias and thermal gradient across the junction. Consequently, the Kohn-Sham system of the theory requires three exchange-correlations potentials. In linear response, the new formalism leads to exact expressions for the many-body transport coefficients (both electrical and thermal conductances and Seebeck coefficient) in terms of both the corresponding Kohn-Sham coefficients and derivatives of the exchange-correlations potentials. The theory is applied to the Single Impurity Anderson Model, and an accurate analytic parametrization for these derivatives in the Coulomb blockade regime is constructed through reverse engineering.

preprint2020arXiv

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.