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Robert Sittig

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Published work

2 published item(s)

preprint2022arXiv

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match the telecom C-band [4] stands out, while source brightness and high single-photon purity are key features in virtually any quantum implementation [5, 6]. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9MHz for an excitation repetition rate of 228MHz (first-lens collection efficiency ca. 17% for NA = 0.6), while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. Moreover, the compatibility with temperatures of up to 40K attainable with compact cryo coolers, further underlines the suitability for out-of-the-lab implementations.

preprint2022arXiv

Wavelength-tunable open double-microcavity to enhance two closely spaced optical transitions

Microcavities have long been recognized as indispensable elements in quantum photonic research due to their usefulness for enhanced light extraction and light-matter interaction. A conventional high-Q cavity structure typically allows only a single optical transition to be tuned into resonance with a specific mode. The transition to a more advanced double-cavity structure, however, introduces new and interesting possibilities such as enhancing two spectrally close optical transitions at the same time with two distinct cavity modes. Here, we investigate a cavity structure composed of a monolithic planar cavity enclosed between two semiconductor distributed Bragg reflectors (DBR) and a top dielectric mirror deposited on a fiber tip. While the bottom cavity is formed by the two DBRs, the mirror on the fiber tip and the top DBR of the semiconductor chip create a second tunable cavity. These coupled cavities exhibit mode hybridization when tuned into resonance and their splitting can be adjusted to match with the spectral separation of closely spaced optical transitions by a suitable sample design. Furthermore, we report on the simultaneous resonance tuning of the exciton and biexciton transition of a semiconductor quantum dot, each to a separate mode of the open fiber-based double cavity. Decay time measurements at simultaneous resonance showed a Purcell-factor of $F_P^X$=1.9$\pm$0.4 for the exciton transition.