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Michael Jetter

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Published work

12 published item(s)

preprint2022arXiv

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match the telecom C-band [4] stands out, while source brightness and high single-photon purity are key features in virtually any quantum implementation [5, 6]. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9MHz for an excitation repetition rate of 228MHz (first-lens collection efficiency ca. 17% for NA = 0.6), while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. Moreover, the compatibility with temperatures of up to 40K attainable with compact cryo coolers, further underlines the suitability for out-of-the-lab implementations.

preprint2022arXiv

Observation of ultrafast interfacial Meitner-Auger energy transfer in a van der Waals heterostructure

Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe$_2$/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe$_2$ is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe$_2$. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe$_2$ to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.

preprint2022arXiv

Semiconductor waveguide quantum well lasers

Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record lasing thresholds as low as 60 mW of pump power. We study the emission of single lasers and arrays of lasers in the sub-mm range. We are able to create waveguide laser arrays with modal widths of approximately 5-10 μm separated by 10-20 μm, using real and reciprocal space imaging we study their emission characteristics and find that they maintain their mutual coherence while operating on either single or multiple longitudinal modes per lasing cavity.

preprint2022arXiv

Wavelength-tunable open double-microcavity to enhance two closely spaced optical transitions

Microcavities have long been recognized as indispensable elements in quantum photonic research due to their usefulness for enhanced light extraction and light-matter interaction. A conventional high-Q cavity structure typically allows only a single optical transition to be tuned into resonance with a specific mode. The transition to a more advanced double-cavity structure, however, introduces new and interesting possibilities such as enhancing two spectrally close optical transitions at the same time with two distinct cavity modes. Here, we investigate a cavity structure composed of a monolithic planar cavity enclosed between two semiconductor distributed Bragg reflectors (DBR) and a top dielectric mirror deposited on a fiber tip. While the bottom cavity is formed by the two DBRs, the mirror on the fiber tip and the top DBR of the semiconductor chip create a second tunable cavity. These coupled cavities exhibit mode hybridization when tuned into resonance and their splitting can be adjusted to match with the spectral separation of closely spaced optical transitions by a suitable sample design. Furthermore, we report on the simultaneous resonance tuning of the exciton and biexciton transition of a semiconductor quantum dot, each to a separate mode of the open fiber-based double cavity. Decay time measurements at simultaneous resonance showed a Purcell-factor of $F_P^X$=1.9$\pm$0.4 for the exciton transition.

preprint2021arXiv

Optical Charge Injection and Full Coherent Control of Spin-Qubit in the Telecom C-band Emitting Quantum Dot

Solid-state quantum emitters with manipulable spin-qubits are promising platforms for quantum communication applications. Although such light-matter interfaces could be realized in many systems only a few allow for light emission in the telecom bands necessary for long-distance quantum networks. Here, we propose and implement a new optically active solid-state spin-qubit based on a hole confined in a single InAs/GaAs quantum dot grown on an InGaAs metamorphic buffer layer emitting photons in the C-band. We lift the hole spin-degeneracy using an external magnetic field and demonstrate hole injection, initialization, read-out and complete coherent control using picosecond optical pulses. These results showcase a new solid-state spin-qubit platform compatible with preexisting optical fibre networks.

preprint2014arXiv

Monolithic on-chip integration of semiconductor waveguides, beamsplitters and single-photon sources

The implementation of a fully integrated Hadamard gate on one single chip is currently one of the major goals in the quantum computation and communication community. Prerequisites for such a chip are the integration of single-photon sources and detectors into waveguide structures such as photonic crystals or slab and ridge waveguide. Here, we present an implementation of a single-photon on-chip experiment based on a III-V semiconductor platform. Individual semiconductor quantum dots were used as pulsed single-photon sources integrated in ridge waveguides, and on-chip waveguide-beamsplitter operation is verified on the single-photon level by performing off-chip photon cross-correlation measurements between the two output ports of the beamsplitter. A careful characterization of the waveguide propagation losses (~ 0.0068 dB/um) documents the applicability of such GaAs-based waveguide structures in more complex photonic integrated circuits. The presented work marks an important step towards the realization of fully integrated photonic quantum circuits including on-demand single-photon sources.

preprint2013arXiv

Post-selected indistinguishable single-photon emission from the Mollow triplet sidebands of a resonantly excited quantum dot

Applying high power continuous-wave resonant s-shell excitation to a single self-assembled In- GaAs quantum dot, we demonstrate the generation of post-selected single-indistinguishable photons from the Mollow triplet sidebands. A sophisticated spatial filtering technique based on a double Michelson interferometer enabled us to separate the spectrally close lying individual Mollow components and perform almost background free two-photon interference measurements. Showing high consistency with the results of an independent determination of the emission coherence of 250 +/- 30 ps, our analysis reveals a close to ideal visibility contrast of up to 97 %. Due to their easy spectral tunability and their distinct advantage of cascaded photon emission between the individual Mollow sidebands, they resemble a versatile tool for quantum information applications.

preprint2012arXiv

Detuning-Dependent Mollow Triplet of a Coherently-Driven Single Quantum Dot

We present both experimental and theoretical investigations of a laser-driven quantum dot (QD) in the dressed-state regime of resonance fluorescence. We explore the role of phonon scattering and pure dephasing on the detuning-dependence of the Mollow triplet and show that the triplet sidebands may spectrally broaden or narrow with increasing detuning. Based on a polaron master equation approach which includes electron-phonon interaction nonperturbatively, we derive a fully analytical expression for the spectrum. With respect to detuning dependence, we identify a crossover between the regimes of spectral sideband narrowing or broadening. A comparison of the theoretical predictions to detailed experimental studies on the laser detuning-dependence of Mollow triplet resonance emission from single In(Ga)As QDs reveals excellent agreement.

preprint2012arXiv

The phase boundary of superconducting niobium thin films with antidot arrays fabricated with microsphere photolithography

The experimental investigation of the $I_c(B)$--$T_c(B)$ phase boundary of superconducting niobium films with large area quasihexagonal hole arrays is reported. The hole arrays were patterned with microsphere photolithography. We investigate the perforated niobium films by means of electrical directed current transport measurements close to the transition temperature $T_c$ in perpendicularly applied magnetic fields. We find pronounced modulations of the critcal current with applied magnetic field, which we interpret as a consequence of commensurable states between the Abrikosov vortex lattice and the quasihexagonal pinning array. Furthermore, we observe Little-Parks oscillations in the critical temperature vs magnetic field.

preprint2012arXiv

Visible-to-telecom quantum frequency conversion of light from a single quantum emitter

Quantum frequency conversion (QFC), a nonlinear optical process in which the frequency of a quantum light field is altered while conserving its non-classical correlations, was first demonstrated 20 years ago. Meanwhile, it is considered an essential tool for the implementation of quantum repeaters since it allows for interfacing quantum memories with telecom-wavelength photons as quantum information carriers. Here we demonstrate efficient (>30%) QFC of visible single photons (711 nm) emitted by a quantum dot (QD) to a telecom wavelength (1,313 nm). Analysis of the first and second-order coherence before and after wavelength conversion clearly proves that important properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with QFC as a promising technique for quantum repeater schemes.

preprint2011arXiv

Heralded Single-Photon Emission from the Mollow Triplet Sidebands of a Quantum Dot

Emission from a resonantly excited quantum emitter is a fascinating research topic within quantum optics and a useful source for different types of quantum light fields. The resonance spectrum consists of a single spectral line below saturation of a quantum emitter which develops into a triplet at powers above saturation of the emitter. The spectral properties of the triplet strongly depends on pump power and detuning of the excitation laser. The three closely spaced photon channels from the resonance fluorescence have different photon statistical signatures. We present a detailed photon-statistics analysis of the resonance fluorescence emission triplet from a solid state-based artificial atom, i.e. a semiconductor quantum dot. The photon correlation measurements demonstrate both 'single' and 'heralded' photon emission from the Mollow triplet sidebands. The ultra-bright and narrowband emission (5.9 MHz into the first lens) can be conveniently frequency-tuned by laser detuning over 15 times its linewidth ({Δν} \approx 1.0 GHz). These unique properties make the Mollow triplet sideband emission a valuable light source for, e.g.quantum light spectroscopy and quantum information applications.

preprint2008arXiv

InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations

Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al0.50Ga0.50InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers.