Researcher profile

Robert J Cava

Robert J Cava contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Observation of three superconducting transitions in the pressurized CDW-bearing compound TaTe2

Transition metal dichalcogenides host a wide variety of lattice and electronic structures, as well as corresponding exotic physical properties, especially under certain tuning conditions. Here, we are the first to report the observation of pressure-induced three superconducting transitions in TaTe2, a charge density wave (CDW) - bearing layered transition-metal dichalcogenide that is metallic but not superconducting at ambient pressure. We find that its CDW state can be easily suppressed upon increasing pressure up to ~ 1 GPa. A superconducting state then emerges from the suppressed CDW state and persists to the pressure about 7 GPa. Unexpectedly, another superconducting state appears at ~ 11 GPa within the same monoclinic (M) structure of its ambient-pressure one. Upon further compression to 21 GPa, a third superconducting state with higher Tc appears from a high-pressure (HP) phase. Our experimental results suggest that the pressure-induced three superconducting transitions in TaTe2 are respectively driven by the suppression of the CDW state, the change of the angle in the M phase and the transition of M-to-HP phase. These results demonstrate not only the versatile nature of this correlated electron system, but also the first experimental example that shows the pressure-induced evolution from a CDW state to three superconducting states driven by different mechanisms.

preprint2021arXiv

Erbium-Implanted Materials for Quantum Communication Applications

Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.