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Robert G. Elliman

Robert G. Elliman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2022arXiv

Characterization and modeling of spiking and bursting in experimental NbOx neuron

Hardware spiking neural networks hold the promise of realizing artificial intelligence with high energy efficiency. In this context, solid-state and scalable memristors can be used to mimic biological neuron characteristics. However, these devices show limited neuronal behaviors and have to be integrated in more complex circuits to implement the rich dynamics of biological neurons. Here we studied a NbOx memristor neuron that is capable of emulating numerous neuronal dynamics, including tonic spiking, stochastic spiking, leaky-integrate-and-fire features, spike latency, temporal integration. The device also exhibits phasic bursting, a property that has scarcely been observed and studied in solid-state nano-neurons. We show that we can reproduce and understand this particular response through simulations using non-linear dynamics. These results show that a single NbOx device is sufficient to emulate a collection of rich neuronal dynamics that paves a path forward for realizing scalable and energy-efficient neuromorphic computing paradigms.

preprint2020arXiv

Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they exhibit a smooth S-type characteristic and have a temperature-dependent device resistance characterised by an activation energy of 0.25 eV, consistent with conduction in polycrystalline VO2, while for high-compliance currents they exhibit an abrupt snap-back characteristic and a resistance characterised by an activation energy of 0.025 eV, consistent with conduction in oxygen deficient VOx. In both cases, the temperature dependence of the switching voltage implies that the conductivity change is due to the insulator-metal transition in VO2. From this analysis it is concluded that electroforming at low currents creates a conductive filament comprised largely of polycrystalline VO2, while electroforming at high currents creates a composite structure comprised of VO2 and a conductive halo of oxygen deficient VOx. The effect of electroforming on the NDR mode is then explained with reference to a lumped element model of filamentary conduction that includes the effect of a parallel resistance created by the halo. These results provide new insight into the NDR response of vanadium-oxide-based devices and a basis for designing devices with specific characteristics.

preprint2014arXiv

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination

Bismuth donors ion-implanted in $^{28}$Si and $^\text{nat}$Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transition, at which the linewidth is significantly narrowed, is observed for the bismuth donors. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a bismuth donor and a spin dependent recombination readout center, including the effect of hyperfine and Zeeman interactions.