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Rituraj Sharma

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cond-mat.mtrl-sci physics.optics

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preprint2022arXiv

Dynamic disorder in Bi sub-lattice of $δ$-Bi$_2$O$_3$

$δ$-Bi$_2$O$_3$ is one of the fastest known solid oxide ion conductors owing to its intrinsically defective fluorite-like structure with 25\% vacant sites in the O sub-lattice. Numerous diffraction measurements and molecular dynamics simulations indicate that the Bi ions construct a cubic, fcc lattice, and the O ions are %distributing and migrating through it. Nonetheless, in this study we present Raman scattering measurements that clearly show that the Bi sub-lattice preserves the monoclinic symmetry of the low temperature phase ($α$-Bi$_2$O$_3$) up to the melting temperature of the crystal. The apparent contradiction between our observations and previous findings suggests that Bi ions oscillate between local minima of the effective potential energy surface. These minima represent the monoclinic phase while the time-averaged structure is the cubic phase. We discuss the implication of these low-frequency oscillations on ion conduction.

preprint2020arXiv

The tetragonal phase of CH$_{3}$NH$_{3}$PbI$_{3}$ is strongly anharmonic

Halide perovskite (HP) semiconductors exhibit unique strong coupling between the electronic and structural dynamics. The high-temperature cubic phase of HPs is known to be entropically stabilized, with imaginary frequencies in the calculated phonon dispersion relation. Similar calculations, based on the static average crystal structure, predict a stable tetragonal phase with no imaginary modes. This work shows that in contrast to standard theory predictions, the room-temperature tetragonal phase of CH$_{3} $NH$_{3} $PbI$_{3}$ is strongly anharmonic. We use Raman polarization-orientation (PO) measurements and \textit{ab initio} molecular dynamics (AIMD) to investigate the origin and temperature evolution of the strong structural anharmonicity throughout the tetragonal phase. Raman PO measurements reveal a new spectral feature that resembles a soft mode. This mode shows an unusual continuous increase in damping with temperature which is indicative of an anharmonic potential surface. The analysis of AIMD trajectories identifies two major sources of anharmonicity: the orientational unlocking of the [CH$_{3} $NH$_{3}$]$^+$ ions and large amplitude octahedral tilting that continuously increases with temperature. Our work suggests that the standard phonon picture cannot describe the structural dynamics of tetragonal CH$_{3} $NH$_{3} $PbI$_{3}$.

preprint2019arXiv

Halide perovskites under polarized light: Vibrational symmetry analysis using polarized Raman

In the last decade, hybrid organic-inorganic halide perovskites have emerged as a new type of semiconductor for photovoltaics and other optoelectronic applications. Unlike standard, tetrahedrally bonded semiconductors (e.g. Si and GaAs), the ionic thermal fluctuations in the halide perovskites (i.e. structural dynamics) are strongly coupled to the electronic dynamics. Therefore, it is crucial to obtain accurate and detailed knowledge about the nature of atomic motions within the crystal. This has proved to be challenging due to low thermal stability and the complex, temperature dependent structural phase sequence of the halide perovskites. Here, these challenges are overcome and a detailed analysis of the mode symmetries is provided in the low-temperature orthorhombic phase of methylammonium-lead iodide. Raman measurements using linearly- and circularly- polarized light at 1.16 eV excitation are combined with density functional perturbation theory (DFPT). By performing an iterative analysis of Raman polarization-orientation dependence and DFPT mode analysis, the crystal orientation is determined. Subsequently, accounting for birefringence effects detected using circularly polarized light excitation, the symmetries of all the observed Raman-active modes at 10 K are assigned.

preprint2015arXiv

First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films

Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K for continuous illumination of ~ 3 hours. Strikingly, the temporal evolution of PD/PB show distinct characteristics at the temperatures of illumination and provide valuable information on the light induced structural changes. Further, structure specific far infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the lightinduced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge25As10Se65 ChG thin films.