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Amritesh Rai

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2020arXiv

Stacking Order Driven Optical Properties and Carrier Dynamics in ReS2

Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principle calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm-1 for AA stacking, and 20 cm-1 for AB stacking, making a simple tool for determining the stacking orders in ReS2. Polarized photoluminescence (PL) reveals that AB stacking possesses blue-shifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. Our findings underscore the stacking-order driven optical properties and carrier dynamics of ReS2, mediate many seemingly contradictory results in literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.

preprint2020arXiv

Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films

Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning tunneling microscopy indicate a flat smooth film growth along the c-axis, and is very similar to that from a hexagonal surface. X-ray diffraction pattern confirms the growth along the c-axis with c-axis lattice constant of 17.39 Å. The grown film is semiconducting, having a small band gap of about 0.034 eV, as calculated from the temperature dependent resistivity. Antiferromagnetic nature of the film with a Néel temperature of about 40 K is estimated from the magnetic exchange bias measurements. A larger out-of-plane exchange bias, along with a smaller in-plane exchange bias is observed below 40 K. Exchange bias training effects are analyzed based on different models and are observed to be following a modified power-law decay behavior.

preprint2016arXiv

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact resistance of ~ $180$ $Ω.μm$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ $μA/μm$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this doping technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the doping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated doping as seen in the case of $high-κ$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-κ$ dielectric environment.

preprint2016arXiv

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS$_2$ on oxide

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional based simulations, we consider the effects of near-interface O vacancies in the oxide slab, and Mo or S vacancies in the MoS$_2$ layer. Band structures and atom-projected densities of states for each system and with differing oxide terminations were calculated, as well as those for the defect-free MoS$_2$-dielectrics system and for isolated dielectric layers for reference. Among our results, we find that with O vacancies, both the Hf-terminated HfO$_2$-MoS$_2$ system, and the O-terminated and H-passivated Al$_2$O$_3$-MoS$_2$ systems appear metallic due to doping of the oxide slab followed by electron transfer into the MoS$_2$, in manner analogous to modulation doping. The n-type doping of monolayer MoS$_2$ by high-k oxides with oxygen vacancies then is experimentally demonstrated by electrically and spectroscopically characterizing back-gated monolayer MoS$_2$ field effect transistors encapsulated by oxygen deficient alumina and hafnia.

preprint2015arXiv

Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films

Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport properties of (001)-oriented Cr$_2$Te$_3$ thin films grown on Al$_2$O$_3$(0001) and Si(111)-(7$\times$7) surfaces by molecular beam epitaxy (MBE). Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic having the Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magneto-transport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the $c$-axis.