Researcher profile

Renliang Yuan

Renliang Yuan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Cepstral Scanning Transmission Electron Microscopy Imaging of Severe Lattice Distortions

The development of four-dimensional (4D) scanning transmission electron microscopy (STEM) using fast detectors has opened-up new avenues for addressing some of long-standing challenges in electron imaging. One of these challenges is how to image severely distorted crystal lattices, such as at a dislocation core. Here we introduce a new 4D-STEM technique, called Cepstral STEM, for imaging disordered crystals using electron diffuse scattering. Local fluctuations of diffuse scattering are captured by scanning electron nanodiffraction (SEND) using a coherent probe. The harmonic signals in electron diffuse scattering are detected through Cepstral analysis and used for imaging. By integrating Cepstral analysis with 4D-STEM, we demonstrate that information about the distortive part of electron scattering potential can be separated and imaged at nm spatial resolution. We apply our technique to the analysis of a dislocation core in SiGe and lattice distortions in high entropy alloy.

preprint2021arXiv

Training artificial neural networks for precision orientation and strain mapping using 4D electron diffraction datasets

Techniques for training artificial neural networks (ANNs) and convolutional neural networks (CNNs) using simulated dynamical electron diffraction patterns are described. The premise is based on the following facts. First, given a suitable crystal structure model and scattering potential, electron diffraction patterns can be simulated accurately using dynamical diffraction theory. Secondly, using simulated diffraction patterns as input, ANNs can be trained for the determination of crystal structural properties, such as crystal orientation and local strain. Further, by applying the trained ANNs to four-dimensional diffraction datasets (4D-DD) collected using the scanning electron nanodiffraction (SEND) or 4D scanning transmission electron microscopy (4D-STEM) techniques, the crystal structural properties can be mapped at high spatial resolution. Here, we demonstrate the ANN-enabled possibilities for the analysis of crystal orientation and strain at high precision and benchmark the performance of ANNs and CNNs by comparing with previous methods. A factor of thirty improvement in angular resolution at 0.009 degrees (0.16 mrad) for orientation mapping, sensitivity at 0.04% or less for strain mapping, and improvements in computational performance are demonstrated.