BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Jian-Min Zuo

Jian-Min Zuo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2022arXiv

Structural and Magnetic Properties of Pt/Co/Mn-Based Multilayers

Magnetic multilayers are a rich class of materials systems with numerous highly tunable physical parameters that determine both their magnetic and electronic properties. Here we present a comprehensive experimental study of a novel system, Pt/Co/Mn, which extends the group of Pt/Co/X ($\mathrm{X}=$ metal) multilayers that have been investigated thus far. We demonstrate that an increasing Co layer thickness changes the magnetic anisotropy from out-of-plane to in-plane, whereas the deposition of thicker Mn layers leads to a decrease in the saturation magnetization. Temperature-dependent magnetometry measurements reinforce the hypothesis of antiferromagnetic coupling at the Co/Mn interfaces being responsible for the observed Mn thickness dependence of the magnetization reversal. Moreover, magneto-optical imaging experiments indicate systematic changes in magnetic domain patterns as a function of the Co and Mn layer thickness, suggesting the existence of bubble-like domains -- potentially even magnetic skyrmions -- in the case of sufficiently thick Mn layers, which are expected to contribute to a sizeable Dzyaloshinskii-Moriya interaction in the multilayer stacks. We identify Pt/Co/Mn as a highly complex multilayer system with strong potential for further fundamental studies and possible applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cepstral Scanning Transmission Electron Microscopy Imaging of Severe Lattice Distortions

The development of four-dimensional (4D) scanning transmission electron microscopy (STEM) using fast detectors has opened-up new avenues for addressing some of long-standing challenges in electron imaging. One of these challenges is how to image severely distorted crystal lattices, such as at a dislocation core. Here we introduce a new 4D-STEM technique, called Cepstral STEM, for imaging disordered crystals using electron diffuse scattering. Local fluctuations of diffuse scattering are captured by scanning electron nanodiffraction (SEND) using a coherent probe. The harmonic signals in electron diffuse scattering are detected through Cepstral analysis and used for imaging. By integrating Cepstral analysis with 4D-STEM, we demonstrate that information about the distortive part of electron scattering potential can be separated and imaged at nm spatial resolution. We apply our technique to the analysis of a dislocation core in SiGe and lattice distortions in high entropy alloy.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Training artificial neural networks for precision orientation and strain mapping using 4D electron diffraction datasets

Techniques for training artificial neural networks (ANNs) and convolutional neural networks (CNNs) using simulated dynamical electron diffraction patterns are described. The premise is based on the following facts. First, given a suitable crystal structure model and scattering potential, electron diffraction patterns can be simulated accurately using dynamical diffraction theory. Secondly, using simulated diffraction patterns as input, ANNs can be trained for the determination of crystal structural properties, such as crystal orientation and local strain. Further, by applying the trained ANNs to four-dimensional diffraction datasets (4D-DD) collected using the scanning electron nanodiffraction (SEND) or 4D scanning transmission electron microscopy (4D-STEM) techniques, the crystal structural properties can be mapped at high spatial resolution. Here, we demonstrate the ANN-enabled possibilities for the analysis of crystal orientation and strain at high precision and benchmark the performance of ANNs and CNNs by comparing with previous methods. A factor of thirty improvement in angular resolution at 0.009 degrees (0.16 mrad) for orientation mapping, sensitivity at 0.04% or less for strain mapping, and improvements in computational performance are demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Doped NiO: the Mottness of a charge transfer insulator

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap.

0 citations0 reviewsNo code linkedOpen access