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Ranran Zhang

Ranran Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-elphysics.app-phquant-ph

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Published work

7 published item(s)

preprint2022arXiv

Regulate the direct-indirect electronic band gap transition by electron-phonon interaction in BaSnO3

The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-doping Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-doping played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.

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preprint2020arXiv

Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

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preprint2019arXiv

Persistent Insulator: Avoidance of Metallization at Megabar Pressures in Strongly Spin-Orbit-Coupled Sr2IrO4

It is commonly anticipated that an insulating state collapses in favor of an emergent metallic state at high pressures as the unit cell shrinks and the electronic bandwidth broadens to fill the insulating energy band gap. Here we report a rare insulating state that persists up to at least 185 GPa in the antiferromagnetic iridate Sr2IrO4, which is the archetypical spin-orbit-driven Jeff = 1/2 insulator. This study shows the electrical resistance of single-crystal Sr2IrO4 initially decreases with applied pressure, reaches a minimum in the range, 32 - 38 GPa, then abruptly rises to fully recover the insulating state with further pressure increases up to 185 GPa. Our synchrotron x-ray diffraction and Raman scattering data show the onset of the rapid increase in resistance is accompanied by a structural phase transition from the native tetragonal I41/acd phase to an orthorhombic Pbca phase (with much reduced symmetry) at 40.6 GPa. The clear-cut correspondence of these two anomalies is key to understanding the stability of the insulating state at megabar pressures: Pressure-induced, severe structural distortions prevent the expected metallization, despite the 26% volume compression attained at the highest pressure accessed in this study. Moreover, the resistance of Sr2IrO4 remains stable while the applied pressure is tripled from 61 GPa to 185 GPa. These results suggest that a novel type of electronic Coulomb correlation compensates the anticipated band broadening in strongly spin-orbit-coupled materials at megabar pressures.

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preprint2016arXiv

Pressure induced re-emergence of superconductivity in superconducting topological insulator Sr0.065Bi2Se3

The recent-discovered Sr$_x$Bi$_2$Se$_3$ superconductor provides an alternative and ideal material base for investigating possible topological superconductivity. Here, we report that in Sr$_{0.065}$Bi$_{2}$Se$_3$, the ambient superconducting phase is gradually depressed upon the application of external pressure. At high pressure, a second superconducting phase emerges at above 6 GPa, with a maximum $T_c$ value of $\sim$8.3 K. The joint investigations of the high-pressure synchrotron x-ray diffraction and electrical transport properties reveal that the re-emergence of superconductivity in Sr$_{0.065}$Bi$_{2}$Se$_3$ is closely related to the structural phase transition from ambient rhombohedral phase to high-pressure monoclinic phase around 6 GPa, and further to another high-pressure tetragonal phase above 25 GPa.

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preprint2016arXiv

Superconductivity and Charge Density Wave in ZrTe$_{3-x}$Se$_{x}$

Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe$_{3}$ when the long range CDW order is gradually suppressed. Superconducting critical temperature $T_c(x)$ in ZrTe$_{3-x}$Se$_x$ (${0\leq}x\leq0.1$) increases up to 4 K plateau for $0.04$$\leq$$x$$\leq$$0.07$. Further increase in Se content results in diminishing $T_{c}$ and filametary superconductivity. The CDW modes from Raman spectra are observed in $x$ = 0.04 and 0.1 crystals, where signature of ZrTe$_{3}$ CDW order in resistivity vanishes. The electronic-scattering for high $T_{c}$ crystals is dominated by local CDW fluctuations at high temperures, the resistivity is linear up to highest measured $T=300K$ and contributes to substantial in-plane anisotropy.

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preprint2015arXiv

A new topological semimetal with iso-energetic Weyl fermions in TaAs under high pressure

TaAs as one of the experimentally discovered topological Weyl semimetal has attracted intense interests recently. The ambient TaAs has two types of Weyl nodes which are not on the same energy level. As an effective way to tune lattice parameters and electronic interactions, high pressure is becoming a significant tool to explore new materials as well as their exotic states. Therefore, it is highly interesting to investigate the behaviors of topological Weyl fermions and possible structural phase transitions in TaAs under pressure. Here, with a combination of ab initio calculations and crystal structure prediction techniques, a new hexagonal P-6m2 phase is predicted in TaAs at pressure around 14 GPa. Surprisingly, this new phase is a topological semimetal with only single set of Weyl nodes exactly on the same energy level. The phase transition pressure from the experimental measurements, including electrical transport measurements and Raman spectroscopy, agrees with our theoretical prediction reasonably. Moreover, the P-6m2 phase seems to be quenched recoverable to ambient pressure, which increases the possibilities of further study on the exotic behaviors of single set of Weyl fermions, such as the interplay between surface states and other properties.

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preprint2015arXiv

Pressure-induced semimetal to superconductor transition in a three-dimensional topological material ZrTe5

As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Utilizing resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges surprisingly. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement and theoretical calculations enable a complete understanding of the emerging exotic properties in three-dimensional topological materials happened under extreme environments.

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