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Researcher profile

Ranran Zhang

Ranran Zhang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-phquant-ph

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Published work

3 published item(s)

preprint2022arXiv

Regulate the direct-indirect electronic band gap transition by electron-phonon interaction in BaSnO3

The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-doping Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-doping played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.

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preprint2020arXiv

Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

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preprint2019arXiv

Persistent Insulator: Avoidance of Metallization at Megabar Pressures in Strongly Spin-Orbit-Coupled Sr2IrO4

It is commonly anticipated that an insulating state collapses in favor of an emergent metallic state at high pressures as the unit cell shrinks and the electronic bandwidth broadens to fill the insulating energy band gap. Here we report a rare insulating state that persists up to at least 185 GPa in the antiferromagnetic iridate Sr2IrO4, which is the archetypical spin-orbit-driven Jeff = 1/2 insulator. This study shows the electrical resistance of single-crystal Sr2IrO4 initially decreases with applied pressure, reaches a minimum in the range, 32 - 38 GPa, then abruptly rises to fully recover the insulating state with further pressure increases up to 185 GPa. Our synchrotron x-ray diffraction and Raman scattering data show the onset of the rapid increase in resistance is accompanied by a structural phase transition from the native tetragonal I41/acd phase to an orthorhombic Pbca phase (with much reduced symmetry) at 40.6 GPa. The clear-cut correspondence of these two anomalies is key to understanding the stability of the insulating state at megabar pressures: Pressure-induced, severe structural distortions prevent the expected metallization, despite the 26% volume compression attained at the highest pressure accessed in this study. Moreover, the resistance of Sr2IrO4 remains stable while the applied pressure is tripled from 61 GPa to 185 GPa. These results suggest that a novel type of electronic Coulomb correlation compensates the anticipated band broadening in strongly spin-orbit-coupled materials at megabar pressures.

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