Researcher profile

Ranjit Pati

Ranjit Pati contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2011arXiv

Massively parallel computing on an organic molecular layer

Current computers operate at enormous speeds of ~10^13 bits/s, but their principle of sequential logic operation has remained unchanged since the 1950s. Though our brain is much slower on a per-neuron base (~10^3 firings/s), it is capable of remarkable decision-making based on the collective operations of millions of neurons at a time in ever-evolving neural circuitry. Here we use molecular switches to build an assembly where each molecule communicates-like neurons-with many neighbors simultaneously. The assembly's ability to reconfigure itself spontaneously for a new problem allows us to realize conventional computing constructs like logic gates and Voronoi decompositions, as well as to reproduce two natural phenomena: heat diffusion and the mutation of normal cells to cancer cells. This is a shift from the current static computing paradigm of serial bit-processing to a regime in which a large number of bits are processed in parallel in dynamically changing hardware.

preprint2011arXiv

Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction

We propose a new orbital controlled model to explain the gate field induced switching of current in a semiconducting PbS-nanowire junction. A single particle scattering formalism in conjunction with a posteriori density functional approach involving hybrid functional is used to study the electronic current; both first and higher order Stark effects are explicitly treated in our model. Our calculation reveals that after a threshold gate-voltage, orbital mixing produces p-components at the S atoms in the participating orbitals. This results in an inter-layer orbital interaction that allows electron to delocalize along the channel axis. As a consequence a higher conductance state is found. A similar feature is also found in a PbSe nanowire junction, which suggests that this model can be used universally to explain the gate field induced switching of current in lead-chalcogenide nanowire junctions.