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Ranjit Pati

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Published work

2 published item(s)

preprint2011arXiv

Massively parallel computing on an organic molecular layer

Current computers operate at enormous speeds of ~10^13 bits/s, but their principle of sequential logic operation has remained unchanged since the 1950s. Though our brain is much slower on a per-neuron base (~10^3 firings/s), it is capable of remarkable decision-making based on the collective operations of millions of neurons at a time in ever-evolving neural circuitry. Here we use molecular switches to build an assembly where each molecule communicates-like neurons-with many neighbors simultaneously. The assembly's ability to reconfigure itself spontaneously for a new problem allows us to realize conventional computing constructs like logic gates and Voronoi decompositions, as well as to reproduce two natural phenomena: heat diffusion and the mutation of normal cells to cancer cells. This is a shift from the current static computing paradigm of serial bit-processing to a regime in which a large number of bits are processed in parallel in dynamically changing hardware.

preprint2011arXiv

Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction

We propose a new orbital controlled model to explain the gate field induced switching of current in a semiconducting PbS-nanowire junction. A single particle scattering formalism in conjunction with a posteriori density functional approach involving hybrid functional is used to study the electronic current; both first and higher order Stark effects are explicitly treated in our model. Our calculation reveals that after a threshold gate-voltage, orbital mixing produces p-components at the S atoms in the participating orbitals. This results in an inter-layer orbital interaction that allows electron to delocalize along the channel axis. As a consequence a higher conductance state is found. A similar feature is also found in a PbSe nanowire junction, which suggests that this model can be used universally to explain the gate field induced switching of current in lead-chalcogenide nanowire junctions.