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Satyajit Sahu contributes to research discovery and scholarly infrastructure.
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Published work
Lower-dimensional TMDC materials are suitable for thermoelectric applications for their specific quantum confinement and being distinct in the density of states (DOS). Here we investigated thermoelectric parameters of the 2D TMDC monolayer of ZrXY ((X=O, S,) (Y=S, Se)) by using Density Functional Theory (DFT) combined with Boltzmann Transport Equation (BTE)
For high efficiency thermoelectric power conversion not only improvement of materials properties but also prediction and synthesis of new thermoelectric materials is needed. Here we have carried out a systematic investigation on thermoelectric performance of newly predicted two dimensional (2D) semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using density functional theory (DFT) and Boltzmann transport equation (BTE). Our computed values of lattice thermal conductivity (kph) are ultralow which result very high thermoelectric figure of merit (ZT) value of 0.78 (0.80) at 500K in SiS2 (SiSe2) monolayer. The ultralow values of kph are attributed to phonon-phonon coupling of acoustic and low frequency optical branches which leads to larger scattering, low group velocity, smaller mean free path and shorter lifetime of phonons. It is also found from our investigation that p-type doping is more effective than n-type doping to get optimal power factor (PF) and ZT. Our theoretical investigation suggests that newly predicted semiconducting SiS2 and SiSe2 monolayers can be very promising thermoelectric materials for fabrication of high efficiency thermoelectric power generator to convert wastage heat into electricity.
Two-dimensional (2D) metal halides have received more attention because of their electronic and optoelectronic properties. Recently, researchers are interested to investigate the thermoelectric properties of metal halide monolayers because of their ultralow lattice conductivity, high Seebeck coefficient and figure of merit. Here, we have investigated thermoelectric and optoelectronic properties of XI$_2$ (X=Sn and Si) monolayers with the help of density functional theory and Boltzmann transport equation. The structural parameters have been optimized with relaxation of atomic positions. Excellent thermoelectric and optical properties have been obtained for both SnI$_2$ and SiI$_2$ monolayers. For SnI$_2$ an indirect bandgap of 2.06 eV was observed and the absorption peak was found at 4.68 eV. For this the highest ZT value of 0.84 for p-type doping at 600K has been calculated. Similarly, for SiI$_2$ a comparatively low indirect bandgap of 1.63 eV was observed, and the absorption peak was obtained at 4.86 eV. The calculated ZT product for SiI$_2$ was 0.87 at 600K. Both the crystals having high absorbance and ZT value suggest that they can be promising candidates for optoelectronic and thermoelectric devices.
Two-dimensional transition metal di-chalcogenides (TMDCs) have shown great potential as good quality thermoelectric materials at high temperature since past few years due to their suitable band gap tunabilty, low dimensionality and fantastic combination of electrical conductivity and lattice thermal conductivity. Here, a first principles calculations of electronic and thermoelectric performance of two dimensional monolayer HfS 2 , HfSe 2 and their Janus monolayer HfSSe has been performed with the help of density functional theory and Boltzmann transport equation. Thermodynamical stability of all three structures has been confirmed from phonon dispersion curves. The thermoelectric parameters such as Seebeck coefficient, power factor and electrical conductivity have been calculated at 300K, 400K and 500K. The lattice thermal conductivity at room temperature has been found very low in monolayer HfS 2 , HfSe 2 and HfSSe Janus monolayer as compared to very popular TMDCs such as MoS 2 and WS 2 . An ultralow value of lattice thermal conductivity of the value of 0.36 W/mK at room temperature in Janus monolayer HfSSe has been found which is lower than that of monolayer HfS 2 and HfSe 2 because of the very low group velocity and short phonon lifetime in HfSSe. This ultralow lattice thermal conductivity in Janus monolayer HfSSe results a very high thermoelectric figure of merit close to the value of 1 at room temperature. By constructing the Janus monolayer of HfS 2 and HfSe 2 the thermoelectric performances significantly enhanced. Our theoretical investigation predicts that Janus monolayer HfSSe can be a revolutionary candidate for the fabrication of next generation wearable thermoelectric power generator to convert human body heat into electricity.