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Researcher profile

Ramtin Zand

Ramtin Zand contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging TechnologiesMachine LearningComputer Vision

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Published work

4 published item(s)

preprint2022arXiv

MRAM-based Analog Sigmoid Function for In-memory Computing

We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x less power, and occupies 2.5-4931x smaller area, compared to the state-of-the-art analog and digital implementations. Moreover, the developed neuron can be readily integrated with memristive crossbars without requiring any intermediate signal conversion units. The architecture-level analyses show that a fully-analog in-memory computing (IMC) circuit that use our SOT-MRAM neuron along with an SOT-MRAM based crossbar can achieve more than 1.1x, 12x, and 13.3x reduction in power, latency, and energy, respectively, compared to a mixed-signal implementation with analog memristive crossbars and digital neurons. Finally, through cross-layer analyses, we provide a guide on how varying the device-level parameters in our neuron can affect the accuracy of multilayer perceptron (MLP) for MNIST classification.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation

Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal structures in Deep Belief Networks (DBNs), the impact of reducing the Magnetic Tunnel Junction's (MTJ's) energy barrier is assessed and optimized for the resulting stochasticity present in the learning system. This can mitigate the process variation sensitivity of stochastic DBNs which encounter a sharp drop-off when energy barriers exceed near-zero kT. As evaluated for the MNIST dataset for energy barriers at near-zero kT to 2.0 kT in increments of 0.5 kT, it is shown that the stability factor changes by 5 orders of magnitude. The self-compensating circuit developed herein provides a compact, and low complexity approach to mitigating process variation impacts towards practical implementation and fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures

In this paper, the intrinsic physical characteristics of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons in neuromorphic architectures. Performance comparisons with the previous power- and area-efficient sigmoidal neuron circuits exhibit 74x and 12x reduction in power-area-product values for the proposed SOT-MRAM based neuron. To verify the functionally of the proposed neuron within larger scale designs, we have implemented a circuit realization of a 784x16x10 SOT-MRAM based multiplayer perceptron (MLP) for MNIST pattern recognition application using SPICE circuit simulation tool. The results obtained exhibit that the proposed SOT-MRAM based MLP can achieve accuracies comparable to an ideal binarized MLP architecture implemented on GPU, while realizing orders of magnitude increase in processing speed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

TSV Extrusion Morphology Classification Using Deep Convolutional Neural Networks

In this paper, we utilize deep convolutional neural networks (CNNs) to classify the morphology of through-silicon via (TSV) extrusion in three dimensional (3D) integrated circuits (ICs). TSV extrusion is a crucial reliability concern which can deform and crack interconnect layers in 3D ICs and cause device failures. Herein, the white light interferometry (WLI) technique is used to obtain the surface profile of the extruded TSVs. We have developed a program that uses raw data obtained from WLI to create a TSV extrusion morphology dataset, including TSV images with 54x54 pixels that are labeled and categorized into three morphology classes. Four CNN architectures with different network complexities are implemented and trained for TSV extrusion morphology classification application. Data augmentation and dropout approaches are utilized to realize a balance between overfitting and underfitting in the CNN models. Results obtained show that the CNN model with optimized complexity, dropout, and data augmentation can achieve a classification accuracy comparable to that of a human expert.

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