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Raman Sharma

Raman Sharma contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

3D intrinsic shapes of quiescent galaxies in observations and simulations

We study the intrinsic 3D shapes of quiescent galaxies over the last half of cosmic history based on their axial ratio distribution. To this end, we construct a sample of unprecedented size, exploiting multi-wavelength $u$-to-$K_s$ photometry from the deep wide area surveys KiDS+VIKING paired with high-quality $i$-band imaging from HSC-SSP. Dependencies of the shapes on mass, redshift, photometric bulge prominence and environment are considered. For comparison, the intrinsic shapes of quenched galaxies in the IllustrisTNG simulations are analyzed and contrasted to their formation history. We find that over the full $0<z<0.9$ range, and in both simulations and observations, spheroidal 3D shapes become more abundant at $M_* > 10^{11}\ M_{\odot}$, with the effect being most pronounced at lower redshifts. In TNG, the most massive galaxies feature the highest ex-situ stellar mass fractions, pointing to violent relaxation via mergers as the mechanism responsible for their 3D shape transformation. Larger differences between observed and simulated shapes are found at low to intermediate masses. At any mass, the most spheroidal quiescent galaxies in TNG feature the highest bulge mass fractions, and conversely observed quiescent galaxies with the highest bulge-to-total ratios are found to be intrinsically the roundest. Finally, we detect an environmental influence on galaxy shape, at least at the highest masses, such that at fixed mass and redshift quiescent galaxies tend to be rounder in denser environments.

preprint2022arXiv

Cool outflows in MaNGA: a systematic study and comparison to the warm phase

This paper investigates the neutral gas phase of galactic winds via the Na I D$λλ5890,5895$Å feature within $z \sim 0.04$ MaNGA galaxies, and directly compares their incidence and strength to the ionized winds detected within the same parent sample. We find evidence for neutral outflows in 127 galaxies ($\sim 5$ per cent of the analysed line-emitting sample). Na I D winds are preferentially seen in galaxies with dustier central regions and both wind phases are more often found in systems with elevated SFR surface densities, especially when there has been a recent upturn in the star formation activity according to the SFR$_{5Myr}$/SFR$_{800Myr}$ parameter. We find the ionized outflow kinematics to be in line with what we measure in the neutral phase. This demonstrates that, despite their small contributions to the total outflow mass budget, there is value to collecting empirical measurements of the ionized wind phase to provide information on the bulk motion in the outflow. Depending on dust corrections applied to the ionized gas diagnostics, the neutral phase has $\sim 1.2 - 1.8$ dex higher mass outflow rates ($\dot{M}_{out}$), on average, compared to the ionized phase. We quantify scaling relations between $\dot{M}_{out}$ and the strengths of the physical wind drivers (SFR, $L_{AGN}$). Using a radial-azimuthal stacking method, and by considering inclination dependencies, we find results consistent with biconical outflows orthogonal to the disk plane. Our work complements other multi-phase outflow studies in the literature which consider smaller samples, more extreme objects, or proceed via stacking of larger samples.

preprint2020arXiv

Optical Anisotropy in Tellurene and its Janus Allotropes -- A first principle Study

Here, we present first principle study of structural, electronic, and optical properties of pristine and janus tellurene allotropes using density functional theory (DFT). The $α$, $β$, $δ$, and $η$ allotrope of pristine tellurene exhibit indirect band gap while $γ$ and $σ$ allotropes are metallic. The bandgap shows tunability in janus tellurene compared to pristine tellurene. A metallic to semiconductor transition occurs in janus $γ$, $σ$ and its allotropes. Dirac cone-like interesting feature has been observed for pristine $σ$ tellurene which remains preserved with the opening in energy gap for janus allotrope. In optical properties, imaginary part dielectric function and electron energy loss spectra show a blue shift in janus tellurene as compared to pristine form. Static dielectric constant is tunable in janus tellurene. All allotropes of tellurene are optically active in UV-Vis region with optical anisotropy in all three directions. We believe that our findings will provide useful pointers in the experimental fabrication of devices based on janus tellurene.

preprint2019arXiv

A theory of resistivity in Kondo lattice materials: the memory function approach

We theoretically analyse D.C. resistivity($ρ$) in the Kondo-lattice model using the powerful memory function approach. The complete temperature evolution of $ρ$ is investigated using the Wölfle-Götze expansion of the memory function. The resistivity in this model originates due to spin-flip magnetic scattering of conduction $s$-electron off the quasi-localized $d$ or $f$ electron spins. We find the famous resistivity upturn at lower temperature regime ($k_B T<<μ_d$), where $μ_d$ is the effective chemical potential of $d$-electrons. In the high temperature regime $(μ_d<<k_B T)$ we discover that $ρ\propto T^{\frac{3}{2}}$. The worked out theory is quantitatively compared with experimental data and reasonably good agreement is found.

preprint2019arXiv

Electronic Structure and Carrier Mobilities of Twisted Graphene Helix

We have investigated the effect of twisting on electronic band structure, effective mass and carrier mobilities of three prototypes of AGNRs (N=6, 7 & 8) using Density functional theory combined with Deformation potential theory and Effective mass approximation. It is shown that the influence of twisted modes electron-phonon interaction is smaller than stretching modes, nonetheless, twisting has a profound effect on effective mass and mobilities. Similar to earlier reported conclusion in which the ideal N=3n wide HAGNR potentially exhibit an electron mobility comparable to intrinsic graphene, we also found that the ideal N=3n+2 HAGNRs hole mobility reside more closely to intrinsic graphene which could be increased further through Fluorine passivation. Thus, the control of the ribbon width along with passivation and extent of deformation are of paramount importance for determining the n-type or p-type of ribbons. Also, because of strong response to torsional strain, the N=8 F passivated AGNRs are the most appropriate for mechanical and high frequency switching. Our results suggest that twisting a ribbon can be considered as a good alternative way for controlled manipulation of the band structure and carrier mobilities for applications in mechanical switching devices.