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Benjamin S. Flavel

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.optics

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preprint2022arXiv

Absolute Quantification of sp$^{3}$ Defects in Semiconducting Single-Wall Carbon Nanotubes by Raman Spectroscopy

The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp$^{3}$ defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G$^{+}$ signal ratios and defect densities as extracted from PLQY measurements. Corroborated by a statistical analysis of single-nanotube emission spectra at cryogenic temperature, this method enables the quantitative evaluation of sp$^{3}$ defect densities in (6,5) SWCNTs with an error of $\pm$ 3 defects per micrometer and the determination of oscillator strengths for different defect types. The developed protocol requires only standard Raman spectroscopy and is independent of the defect configuration, dispersion solvent and nanotube length.

preprint2016arXiv

Chiral-Index Resolved Length Mapping of Carbon Nanotubes in Solution Using Electric-Field Induced Differential Absorption Spectroscopy

The length of single-walled carbon nanotubes (SWCNTs) is an important metric for the integration of SWCNTs into devices and for the performance of SWCNT-based electronic or optoelectronic applications. In this work we propose a rather simple method based on electric-field induced differential absorption spectroscopy (EFIDAS) to measure the chiral-index-resolved average length of SWCNTs in dispersions. The method takes advantage of the electric-field induced length-dependent dipole moment of nanotubes and has been verified and calibrated by atomic force microscopy. This method not only provides a low cost, in-situ approach for length measurements of SWCNTs in dispersion, but due to the sensitivity of the method to the SWCNT chiral index, the chiral index dependent average length of fractions obtained by chromatographic sorting can also be derived. Also, the determination of the chiral-index resolved length distribution seems to be possible using this method.

preprint2016arXiv

Light emission, light detection and strain sensing with nanocrystalline graphene

Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end we explore in this work the feasibility of replacing graphene by nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman, X-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.

preprint2013arXiv

Waveguide-integrated electroluminescent carbon nanotubes

Carbon based optoelectronic devices promise to revolutionize modern integrated circuits by combining outstanding electrical and optical properties into a unified technology. By coupling nanoelectronic devices to nanophotonic structures functional components such as nanoscale light emitting diodes, narrow-band thermal emitters, cavity controlled detectors and wideband electro optic modulators can be realized for chipscale information processing. These devices not only allow the light-matter interaction of low-dimensional systems to be studied, but also provide fundamental building blocks for high bandwidth on-chip communication. Here we demonstrate how light from an electrically-driven carbon-nanotube can be coupled directly into a photonic waveguide architecture. We realize wafer scale, broadband sources integrated with nanophotonic circuits allowing for propagation of light over centimeter distances. Moreover, we show that the spectral properties of the emitter can be controlled directly on chip with passive devices using Mach-Zehnder interferometers and grating structures. The direct, near-field coupling of electrically generated light into a waveguide, opposed to far-field fiber coupling of external light sources, opens new avenues for compact optoelectronic systems in a CMOS compatible framework.