BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Rajendra S. Dhaka

Rajendra S. Dhaka appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciphysics.chem-phcond-mat.str-elphysics.app-ph

Catalog footprint

What is connected

4works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2026arXiv

Case study of an exploratory high voltage NASICON-based Na$_4$NiCr(PO$_4$)$_3$ cathode material for sodium-ion batteries

We examine a new NASICON-type Na$_4$NiCr(PO$_4$)$_3$ material designed for high-voltage and multi-electron reactions for the sodium-ion batteries (SIBs). The Rietveld refinement of the X-ray diffraction pattern, using the R$\bar{3}$c space group, confirmed the stabilization of the rhombohedral NASICON framework. Furthermore, the Raman and Fourier transform infrared spectroscopy are employed to probe the structure and chemical bonding. The core-level photoemission analysis reveals the Cr$^{3+}$ and mixed Ni$^{2+}$/Ni$^{3+}$ oxidation states in the sample. Moreover, the bond valence energy landscape (BVEL) analysis, based on the refined structure, revealed a three-dimensional network of well-connected sodium sites with a migration energy barrier of 0.468 eV. The material delivered a good charge capacity at around 4.5 V, but showed no sodium-ion intercalation during discharge, resulting in negligible discharge capacity. The post-mortem analysis confirmed that the crystal structure remained intact. The calculated energy barrier values indicated a reversal in sodium site stability after cycling, though the barriers can still permit feasible ion migration. This suggests that ion transport alone cannot explain the lack of reversibility, which likely arises from intrinsically poor electronic conductivity. These findings highlight key challenges in achieving stable, reversible capacity in this system and underscore the need for doping, structural modification, and electrolyte optimization to realize its full potential as a high-voltage SIB cathode.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electrochemical investigation of MoSeTe as an anode for sodium-ion batteries

Sodium ion batteries (SIBs) are considered as an efficient alternative for lithium-ion batteries (LIBs) owing to the natural abundance and low cost of sodium than lithium. In this context, the anode materials play a vital role in rechargeable batteries to acquire high energy and power density. In order to demonstrate transition metal dichalcogenide (TMD) as potential anode materials, we have synthesized MoSeTe sample by conventional flux method, and the structure and morphology are characterized using x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy. These characterisations confirm the hexagonal crystal symmetry with p63/mmc space group and layered morphology of MoSeTe. We investigate the electrochemical performance of a MoSeTe as a negative electrode (anode) for SIBs in the working potential range of 0.01 to 3.0~V. In a half-cell configuration, the MoSeTe as an anode and Na metal as counter/reference electrode exhibits significant initial specific discharge capacities of around 475 and 355 mAhg$^{-1}$ at current densities of 50 and 100 mAg$^{-1}$, respectively. However, the capacity degraded significantly like $\approx$200~mAhg$^{-1}$ in 2nd cycle, but having $\approx$100\% Coulombic efficiency, which suggest for further modification in this material to improve its stability. The cyclic voltammetry (CV) study reveals the reversibility of the material after 1st cycle, resulting no change in the initial peak positions. The electrochemical impedance spectroscopy (EIS) measurements affirms the smaller charge transfer resistance of fresh cells than the cells after 10th cycle. Moreover, the extracted diffusion coefficient is found to be of the order of 10$^{-14}$ cm$^2$s$^{-1}$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High temperature dielectric and impedance spectroscopy study of LaCo$_{0.7}$Nb$_{0.3}$O$_3$

We report the high temperature dielectric and {\it ac} impedance spectroscopy investigation of Nb substituted LaCo$_{0.7}$Nb$_{0.3}$O$_3$ polycrystalline sample. The maximum dielectric constant value was observed $\approx$1400 at around 400~K where the peak value shows a decreasing trend at higher temperatures and frequency. Similar variation was reflected in the dielectric loss (tan$δ$) behavior with temperature, which shows the thermal activation of the charge carriers in the material. The analysis of high temperature impedance spectroscopy data shows the grain and grain boundary contributions by fitting the Nyquist plots to the equivalent circuit. From the analysis of the impedance and modulus spectra, it was possible to discern between the effects of overlapping grains, grain boundaries, and electrode interfaces. The relaxation time decreases with an increase in the temperature and the activation energy changes from 0.44~eV to 0.56~eV at around 400~K, which is due to involvement of thermal activation in the conduction of charge carriers. The conductivity is found to be increased with temperature for a given frequency, which again shows the semiconducting behavior. Whereas the conductivity increases with increase in frequency at lower temperatures. Also, the conductivity almost saturates with frequency at high temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Structural, magnetic and transport properties of Co$_2$CrAl epitaxial thin films

We report the physical properties of Co$_2$CrAl Heusler alloy epitaxial thin films grown on single crystalline MgO(001) substrate using pulsed laser deposition technique. The x-ray diffraction pattern in $θ$-2$θ$ mode showed the film growth in single phase B2-type ordered cubic structure with the presence of (002) and (004) peaks, and the film oriented along the MgO(001) direction. The $ϕ$~scan along the (220) plane confirms the four-fold symmetry and the epitaxial growth relation found to be Co$_2$CrAl(001)[100]$\vert$$\vert$MgO(001)[110]. The thickness of about 12~nm is extracted through the analysis of x-ray reflectivity data. The isothermal magnetization (M--H) curves confirm the ferromagnetic (FM) nature of the thin film having significant hysteresis at 5 and 300~K. From the in-plane M--H curves, the saturation magnetization values are determined to be 2.1~$μ$$_{\rm B}$/f.u.~at 5~K and 1.6~$μ$$_{\rm B}$/f.u. at 300~K, which suggests the soft FM behavior in the film having the coercive field $\approx$ 522~Oe at 5~K. The thermo-magnetization measurements at 500~Oe magnetic field show the bifurcation between field-cooled and zero-field-cooled curves below about 100~K. The normalized field-cooled magnetization curve follows the T$^2$ dependency, and the analysis reveal the Curie temperature around 335$\pm$11~K. Moreover, the low-temperature resistivity indicates semiconducting behavior with the temperature, and we find a negative temperature coefficient of resistivity (5.2 $\times$ 10$^{-4}$ /K).

0 citations0 reviewsNo code linkedOpen access