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Himani Arora

Himani Arora contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Electrochemical investigation of MoSeTe as an anode for sodium-ion batteries

Sodium ion batteries (SIBs) are considered as an efficient alternative for lithium-ion batteries (LIBs) owing to the natural abundance and low cost of sodium than lithium. In this context, the anode materials play a vital role in rechargeable batteries to acquire high energy and power density. In order to demonstrate transition metal dichalcogenide (TMD) as potential anode materials, we have synthesized MoSeTe sample by conventional flux method, and the structure and morphology are characterized using x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy. These characterisations confirm the hexagonal crystal symmetry with p63/mmc space group and layered morphology of MoSeTe. We investigate the electrochemical performance of a MoSeTe as a negative electrode (anode) for SIBs in the working potential range of 0.01 to 3.0~V. In a half-cell configuration, the MoSeTe as an anode and Na metal as counter/reference electrode exhibits significant initial specific discharge capacities of around 475 and 355 mAhg$^{-1}$ at current densities of 50 and 100 mAg$^{-1}$, respectively. However, the capacity degraded significantly like $\approx$200~mAhg$^{-1}$ in 2nd cycle, but having $\approx$100\% Coulombic efficiency, which suggest for further modification in this material to improve its stability. The cyclic voltammetry (CV) study reveals the reversibility of the material after 1st cycle, resulting no change in the initial peak positions. The electrochemical impedance spectroscopy (EIS) measurements affirms the smaller charge transfer resistance of fresh cells than the cells after 10th cycle. Moreover, the extracted diffusion coefficient is found to be of the order of 10$^{-14}$ cm$^2$s$^{-1}$.

preprint2022arXiv

Terahertz control of photoluminescence emission in few-layer InSe

A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators.

preprint2020arXiv

Autocorrected Off-axis Holography of 2D Materials

The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.

preprint2020arXiv

Photoluminescence dynamics in few-layer InSe

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations.