Source author record

Radhe Agarwal

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

Catalog footprint

Research overview

2works
1topics
4close collaborators

Published work

2 publications

preprint2020arXiv

The shift photovoltaic current and magnetically-induced bulk photocurrent in piezoelectric sillenite crystals

Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi12_{12}GeO20_{20} and Bi12_{12}SiO20_{20} can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi12_{12}SiO20_{20}, excited by linearly- and circularly-polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. We demonstrate that the magneto-photovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi12_{12}SiO20_{20} under specific experimental conditions.

preprint2015arXiv

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt-(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3-LaNiO3 heterostructures

We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206) microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We believe that Schottky barrier modulation by polarization flipping at Pt BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt BSFHO LNO heterostructures.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.