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Jonathan E. Spanier

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cond-mat.mtrl-sci

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preprint2020arXiv

The shift photovoltaic current and magnetically-induced bulk photocurrent in piezoelectric sillenite crystals

Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi$_{12}$GeO$_{20}$ and Bi$_{12}$SiO$_{20}$ can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi$_{12}$SiO$_{20}$, excited by linearly- and circularly-polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. We demonstrate that the magneto-photovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi$_{12}$SiO$_{20}$ under specific experimental conditions.

preprint2016arXiv

Surface- and strain-tuning of the optical dielectric function in epitaxially grown CaMnO3

We report a strong thickness dependence of the complex frequency-dependent optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001), LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the imaginary part of the dielectric function and spectral shifts of 0.5 eV for a given magnitude of absorption are observed. On the basis of the experimental data and first-principles density functional theory calculations of the dielectric function, its evolution with thickness from 4 to 63 nm has several regimes. In the thinnest, strain-coherent films, the response is characterized by a significant contribution from the free surface that dominates strain effects. However, at intermediate and larger thicknesses approaching the bulk-like film, strain coherence and partial strain relaxation persist and in influence the dielectric function.

preprint2015arXiv

A Comprehensive Multiphonon Spectral Analysis in MoS2

We present a comprehensive multiphonon Raman and complementary infrared analysis for bulk and monolayer MoS2.For the bulk the analysis consists of symmetry assignment from which we obtain a broad set of allowed second order transitions at the high symmetry M,K and gamma Brillouin zone points. The attribution of about 80 transitions of up to fifth order Raman processes are proposed in the low temperature(95K)resonant Raman spectrum measured with the excitation energy of 1.96 eV,which is slightly shifted from the A exciton. We propose that the main contributions come from four phonons:A1g(M),E12g(M2),E22g(M1)(TA'(M))and E22g (M2)(LA'(M)). The last three are single degenerate phonons at M with an origin of the E12g(gamma)and E22g(gamma)phonons. Among the four phonons, we identify in the resonant Raman spectra all(but one) of the second order overtones,combination and difference bands and many of the third order bands. Consistent with the expectation that at the M point only combinations with the same inversion symmetry (g or u)are Raman allowed, the contribution of combinations with the LA(M)phonon can not be considered with the above four phonons. Although minor,contribution from K point and possibly gamma point phonons are also evident. The "2LA band",measured at ~460 cm-1 is reassigned.Supported by the striking similarity between this band, measured under off resonant conditions, and recently published two phonon density of states, we propose that the lower part of the band,previously attributed to 2LA(M),is due to a van Hove singularity between K and M. The higher part,previously attributed exclusively to the A2u(gamma)phonon,is mostly due to the LA and LA' phonons at M. For the monolayer MoS2, the second order phonon processes from M and gamma Brillouin zone points are also analyzed and are discussed within similar framework to that of the bulk.

preprint2013arXiv

Normal Mode Determination of Perovskite Crystal Structures with Octahedral Rotations: Theory and Applications

Nuclear site analysis methods are used to enumerate the normal modes of $ABX_{3}$ perovskite polymorphs with octahedral rotations. We provide the modes of the fourteen subgroups of the cubic aristotype describing the Glazer octahedral tilt patterns, which are obtained from rotations of the $BX_{6}$ octahedra with different sense and amplitude about high symmetry axes. We tabulate all normal modes of each tilt system and specify the contribution of each atomic species to the mode displacement pattern, elucidating the physical meaning of the symmetry unique modes. We have systematically generated 705 schematic atomic displacement patterns for the normal modes of all 15 (14 rotated + 1 unrotated) Glazer tilt systems. We show through some illustrative examples how to use these tables to identify the octahedral rotations, symmetric breathing, and first-order Jahn-Teller anti-symmetric breathing distortions of the $BX_{6}$ octahedra, and the associated Raman selection rules. We anticipate that these tables and schematics will be useful in understanding the lattice dynamics of bulk perovskites and would serve as reference point in elucidating the atomic origin of a wide range of physical properties in synthetic perovskite thin films and superlattices.