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In this letter we experimentally demonstrate second harmonic conversion in the opaque region of a GaAs cavity with efficiencies of the order of 0.1% at 612nm, using 3ps pump pulses having peak intensities of order of 10MW/cm2. We show that the conversion efficiency of the inhomogeneous, phase-locked second harmonic component is a quadratic function of the cavity factor Q.
We demonstrate that a Doppler broadened two-level medium can be made transparent to a laser pulse by an appropriate adiabatic variation of the laser field amplitude and its nominal detuning. This new technique of adiabatic self-induced transparency (ASIT) is compared with the well known self-induced transparency (SIT) phenomenon, showing that the adiabatic method is much more robust to variations of the system parameters. We also discuss a possible experimental implementation of ASIT using 87-Rb atoms.
We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650nm and 433nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics become localized inside the cavity leading to relatively large conversion efficiencies. Field localization plays a pivotal role and ushers in a new class of semiconductor-based devices in the visible and UV ranges.
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