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C. Cojocaru

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Published work

3 published item(s)

preprint2020arXiv

Harmonic generation from gold nanolayers: an old problem under a new light

Understanding how light interacts at the nanoscale with metals, semiconductors, or ordinary dielectrics is pivotal if one is to properly engineer nano-antennas, filters and, more generally, devices that aim to harness the effects of new physical phenomena that manifest themselves at the nanoscale. We presently report experimental results on second and third harmonic generation from 20nm- and 70nm-thick gold layers, for TE- and TM-polarized incident light pulses. We highlight and discuss for the first time the relative roles bound electrons and an intensity dependent free electron density (hot electrons) play in third harmonic generation. While planar structures are generally the simplest to fabricate, metal layers that are only a few nanometers thick and partially transparent are almost never studied. Yet, transmission offers an additional reference point for comparison, which through relatively simple experimental measurements affords the opportunity to test the accuracy of available theoretical models. Our experimental results are explained well within the context of the microscopic hydrodynamic model that we employ to simulate second and third harmonic conversion efficiencies, and to simultaneously and uniquely predict the nonlinear dispersive properties of a gold nanolayer under pulsed illumination. Using our experimental observations and our model, based solely on the measured third harmonic power conversion efficiencies we predict |chi3|~10^(-18)-10^(-17)(m/V)^2, triggered mostly by hot electrons, without resorting to the implementation of a z-scan set-up.

preprint2010arXiv

Generation Efficiency of the Second Harmonic Inhomogeneous Component

In this letter we experimentally demonstrate second harmonic conversion in the opaque region of a GaAs cavity with efficiencies of the order of 0.1% at 612nm, using 3ps pump pulses having peak intensities of order of 10MW/cm2. We show that the conversion efficiency of the inhomogeneous, phase-locked second harmonic component is a quadratic function of the cavity factor Q.

preprint2009arXiv

Field Localization and Enhancement of Phase Locked Second and Third Harmonic Generation in Absorbing Semiconductor Cavities

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650nm and 433nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics become localized inside the cavity leading to relatively large conversion efficiencies. Field localization plays a pivotal role and ushers in a new class of semiconductor-based devices in the visible and UV ranges.