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Researcher profile

R. Suryanarayanan

R. Suryanarayanan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2012arXiv

Electronic confinement and ordering instabilities in colossal magnetoresistive bilayer manganites

We present angle-resolved photoemission studies of (La1-zPrz)2-2xSr1+2xMn2O7 with x=0.4 and z=0.1,0.2 and 0.4 along with density functional theory calculations and x-ray scattering data. Our results show that the bilayer splitting in the ferromagnetic metallic phase of these materials is small, if not completely absent. The charge carriers are therefore confined to a single MnO2-layer, which in turn results in a strongly nested Fermi surface. In addition to this, the spectral function also displays clear signatures of an electronic ordering instability well below the Fermi level. The increase of the corresponding interaction strength with z and its magnitude of ~400 meV make the coupling to a bare phonon highly unlikely. Instead we conclude that fluctuating order, involving electronic and lattice degrees of freedom, cause the observed renormalisation of the spectral features.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of pressure on the magnetic, transport, and thermal-transport properties of the electron-doped manganite CaMn$_{1-x}$Sb$_{x}$O$_{3}$

We have demonstrated the effect of hydrostatic pressure on magnetic and transport properties, and thermal transport properties in electron-doped manganites CaMn$_{1-x}$Sb$_{x}$O$_{3}$. The substitution of Sb$^{5+}$ ion for Mn $^{4+}$site of the parent matrix causes one-electron doping with the chemical formula CaMn$^{4+}_{1-2x}$Mn$^{3+}_{x}$Sb$^{5+}_{x}$O$_{3}$ accompanied by a monotonous increase in unit cell volume as a function of $x$. Upon increasing the doping level of Sb, the magnitudes of both electrical resistivity and negative Seebeck coefficient are suppressed at high temperatures, indicating the electron doping. Anomalous diamagnetic behaviors at $x=0.05$ and 0.08 are clearly observed in field cooled dc magnetization. The effect of hydrostatic pressure on dc magnetization is in contrast to the chemical pressure effect due to Sb doping. The dynamical effect of ac magnetic susceptibility measurement points to the formation of the magnetically frustrated clusters such as FM clusters embedded in canted AFM matrix.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Effect of suppression of local distortion on magnetic, electrical and thermal transport properties of Cr substituted bi-layer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$

We have investigated magnetic, electrical and thermal transport properties (Seebeck effect and thermal conductivity) of LaSr$_{2}$Mn$_{2-y}$Cr$_{y}$O$_{7}$ polycrystalline samples ($y$=0.1, 0.2, 0.4 and 0.6). The Cr$^{3+}$ substitution for Mn$^{3+}$ sites causes a removal of $d_{x^2-y^2}$ orbital of $e_g$-electron resulting in a volume shrinkage of lattice. Magnetic measurements reveal the appearance of a glassy behavior for Cr-doped samples, accompanied by both a collapse of the A-type antiferromagnetic structure and the growth of ferromagnetic clusters. Cr-doping effect on electrical transport strongly enhances an insulating behavior over a wide range of temperature, while it suppresses a local minimum of thermoelectric power at lower temperatures. The phonon thermal conduction gradually rises with increasing Cr content, which is contradictory to a typical impurity effect on thermal conductivity. We attribute this to a suppression of local lattice distortion through the introduction of Jahn-Teller inactive ions of Cr$^{3+}$.

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preprint2004arXiv

Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)

We report on the structural, frequency dependent ac susceptibility, dc magnetization and magnetoresistance (MR) measurements on polycrystalline samples of La0.86Ca0.14Mn1-yCryO3(y = 0, 0.1 and 0.2) prepared by sol-gel technique. For y = 0, a paramagnetic to ferromagnetic transition was observed at TC = 185 K. For y = 0.1, the value of TC = 200 K, an increase of 15 K and for y = 0.2, the TC = 195 K, an increase of 10 K. The imaginary part of the ac susceptibility of all the three samples shows a secondary transition at Tf < TC. For y = 0, there is no definite law to account for the frequency dependence of Tf and is attributed to a transition arising out of a canted structure. However, in the case of y = 0.1 and 0.2, the frequency dependence indicate the presence of a reentrant spin glass transition at Tf. Though all the three samples show a semi-conducting behavior between 300 and 5 K, a negative MR was observed corresponding to TC and Tf. The value of MR decreased for the Cr substituted samples.

0 citations0 reviewsNo code linkedOpen access