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R. Schott

R. Schott appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallmath-phmath.MPmath.RTcond-mat.mtrl-scimath.CAmath.FAmath.PR

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Published work

7 published item(s)

preprint2021arXiv

Optical detection of single electron transport dynamics

The unpredictability of a single quantum event lies at the very core of quantum mechanics. Physical information is therefore drawn from a statistical evaluation of many such processes. Nevertheless, recording each single quantum event in a time trace the "random telegraph signal" is of great value, as it allows insight into the underlying physical system. Here, quantum dots have proven to be well suited systems, as they exhibit both single photon emission and single electron charge transport. While single photon emission is generally studied on self-assembled quantum dots, single electron transport studies are focused on gate-defined structures. We investigate, on a single self-assembled quantum dot, the single electron transport in the optical telegraph signal with high bandwidth and observe in the full counting statistics the interplay between charge and spin dynamics in a noninvasive way. In particular, we are able to identify the spin relaxation of the Zeeman-split quantum-dot level in the charge statistics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.

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preprint2015arXiv

Focused ion beam induced growth of monocrystalline InAs nanowires

We investigate monocrystalline InAs nanowires (NWs) which are grown by molecular beam epitaxy (MBE) and induced by focused ion beam (FIB) implanted Au spots. With this unique combination of methods an increase of the aspect ratio, i.e. the length to width ratio, of the grown NWs up to 300 was achieved. To control the morphology and crystalline structure of the NWs, the growth parameters like temperature, flux ratios and implantation fluence are varied and optimized. Furthermore, the influence of the used molecular arsenic species, in particular the As$_2$ to As$_4$ ratio, is investigated and adjusted. In addition to the high aspect ratio, this optimization results in the growth of monocrystalline InAs NWs with a negligible number of stacking faults. Single NWsx were placed site-controlled by FIB implantation, which supplements the working field of area growth.

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preprint2010arXiv

Dynamic Random Walks on Motion Groups

In this note, we give an original convergence result for products of independent random elements of motion group. Then we consider dynamic random walks which are inhomogeneous Markov chains whose transition probability of each step is, in some sense, time dependent. We show, briefly, how Central Limit theorem and Local Limit theorems can be derived from the classical case and provide new results when the rotations are mutually commuting. To the best of our knowledge, this work represents the first investigation of dynamic random walks on the motion group.

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preprint2006arXiv

Operator calculus approach to solving analytic systems

Solving analytic systems using inversion can be implemented in a variety of ways. One method is to use Lagrange inversion and variations. Here we present a different approach, based on dual vector fields. For a function analytic in a neighborhood of the origin in the complex plane, we associate a vector field and its dual, an operator version of Fourier transform. The construction extends naturally to functions of several variables. We illustrate with various examples and present an efficient algorithms readily implemented symbolically in Maple while suitable as well for numerical computations using languages such as C or Java.

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preprint2000arXiv

Berezin quantization of the Schrodinger algebra

We examine the Schrodinger algebra in the framework of Berezin quantization. First, the Heisenberg-Weyl and sl(2) algebras are studied. Then the Berezin representation of the Schrodinger algebra is computed. In fact, the sl(2) piece of the Schrodinger algebra can be decoupled from the Heisenberg component. This is accomplished using a special realization of the sl(2) component that is built from the Heisenberg piece as the quadratic elements in the Heisenberg-Weyl enveloping algebra. The structure of the Schrodinger algebra is revealed in a lucid way by the form of the Berezin representation.

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preprint2000arXiv

Representations of the Schrodinger algebra and Appell systems

We investigate the structure of the Schrodinger algebra and its representations in a Fock space realized in terms of canonical Appell systems. Generalized coherent states are used in the construction of a Hilbert space of functions on which certain commuting elements act as self-adjoint operators. This yields a probabilistic interpretation of these operators as random variables. An interesting feature is how the structure of the Lie algebra is reflected in the probability density function. A Leibniz function and orthogonal basis for the Hilbert space is found. Then Appell systems connected with certain evolution equations, analogs of the classical heat equation, on this algebra are computed.

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