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Researcher profile

R. Schönemann

R. Schönemann contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2016arXiv

Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2

Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier densities and of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and non-saturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below $T \sim 40$ K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase-transition around this temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Critical exponents and intrinsic broadening of the field-induced transition in NiCl$_2$$\cdot$4SC(NH$_2$)$_2$

The field-induced ordering transition in the quantum spin system NiCl$_2$$\cdot$4SC(NH$_2$)$_2$ is studied by means of neutron diffraction, AC magnetometry and relaxation calorimetry. The interpretation of the data is strongly influenced by a finite distribution of transition fields in the samples, which was present but disregarded in previous studies. Taking this effect into account, we find that the order-parameter critical exponent is inconsistent with the BEC universality class even at temperatures below 100 mK. All results are discussed in comparison with previous measurements and with recent similar studies of disordered Ni(Cl$_{1-x}$Br$_x$)$_2$$\cdot$4SC(NH$_2$)$_2$.

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preprint2014arXiv

On the low-field Hall coefficient of graphite

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.

0 citations0 reviewsNo code linkedOpen access