Researcher profile

R. Scheuermann

R. Scheuermann contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2014arXiv

Direct spectroscopic observation of a shallow hydrogen-like donor state in insulating SrTiO$_{3}$

We present a direct spectroscopic observation of a shallow hydrogen-like muonium state in SrTiO$_3$ which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below $\sim 70$ K. From the temperature dependence we estimate an activation energy of $\sim 50$ meV in the bulk and $\sim 23$ meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO$_3$. The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO$_{3}$-based oxide interface systems.

preprint2013arXiv

Behaviour of a muonic atom as an acceptor centre in diamond

Polarized negative muons were used to study the behaviour of the boron acceptor centre in synthetic diamond produced by the chemical vapour deposition (CVD) method. The negative muon substitutes one of the electrons in a carbon atom, and this muonic atom imitates the boron acceptor impurity in diamond. The temperature dependence of the muon spin relaxation rate and spin precession frequency were measured in the range of 20 - 330 K in a transverse magnetic field of 14 kOe. For the first time a negative shift of the muon spin precession was observed in diamond. It is tentatively attributed to an anisotropic hyperfine interaction in the boron acceptor. The magnetic measurements showed that the magnetic susceptibility of the CVD sample was close to that of the purest natural diamond.

preprint2013arXiv

Photo-induced persistent inversion of germanium in a 200-nm-deep surface region

The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a persistent inversion from n- to p-type in a 200-nm-thick surface layer of a germanium wafer by illumination with white and blue light. We induce the inversion with a half-life of ~12 hours at a temperature of 220 K which disappears above 280 K. The photo-induced inversion is absent for a sample with a 20-nm-thick gold capping layer providing a Schottky barrier at the interface. This indicates that charge accumulation at the surface is essential to explain the observed inversion. The contactless change of carrier concentration is potentially interesting for device applications in opto-electronics where the gate electrode and gate oxide could be replaced by the semiconductor surface.

preprint2011arXiv

A lens-coupled scintillation counter in cryogenic environment

In this work we present an elegant solution for a scintillation counter to be integrated into a cryogenic system. Its distinguishing feature is the absence of a continuous light guide coupling the scintillation and the photodetector parts, operating at cryogenic and room temperatures respectively. The prototype detector consists of a plastic scintillator with glued-in wavelength-shifting fiber located inside a cryostat, a Geiger-mode Avalanche Photodiode (G-APD) outside the cryostat, and a lens system guiding the scintillation light re-emitted by the fiber to the G-APD through optical windows in the cryostat shields. With a 0.8mm diameter multiclad fiber and a 1mm active area G-APD the coupling efficiency of the "lens light guide" is about 50%. A reliable performance of the detector down to 3K is demonstrated.

preprint2011arXiv

A time-resolution study with a plastic scintillator read out by a Geiger-mode Avalanche Photodiode

In this work we attempt to establish the best time resolution attainable with a scintillation counter consisting of a plastic scintillator read out by a Geiger-mode Avalanche Photodiode. The measured time resolution is inversely proportional to the square root of the energy deposited in the scintillator, and scales to 18ps (sigma) at 1MeV. This result competes with the best ones reported for photomultiplier tubes.

preprint2011arXiv

Behaviour of muonium in synthetic diamond

The probabilities of finding the muon in various states in synthetic single crystal and polycrystalline diamond were studied. In the IIa-type single-crystal sample at 150 K the contributions of the diamagnetic muon, `normal', and `anomalous' muonium were observed to be 1.5 %, 57 % and 8.1 %, respectively. The missing fraction of muon polarization was 33.4 %, which is approximately two times smaller than in the Ia-type natural diamond, and two or three times greater than in the IIa- and IIb-type natural diamonds. The muon spin relaxation rates at the `normal' and `anomalous' muonium states in the synthetic and natural samples of IIa- and IIb-type are similar.

preprint2010arXiv

Probing the magnetic ground state of the molecular Dysprosium triangle

We present zero field muon spin lattice relaxation measurements of a Dysprosium triangle molecular magnet. The local magnetic fields sensed by the implanted muons indicate the coexistence of static and dynamic internal magnetic fields below $T^* ~35$ K. Bulk magnetization and heat capacity measurements show no indication of magnetic ordering below this temperature. We attribute the static fields to the slow relaxation of the magnetization in the ground state of Dy3. The fluctuation time of the dynamic part of the field is estimated to be ~0.55 $μ$s at low temperatures