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R. Naik

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con physics.optics quant-ph

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preprint2020arXiv

Role of thermal and photo annealing on nonlinear optical response of Ge30Se55Bi15 thin films

In this article, we employed nanosecond Z-scan technique to demonstrate the nonlinear optical response in Ge30Se55Bi15 thin films after thermal and photo annealing. The intensity dependent open aperture Z-scan traces reveal that for all the samples, i.e. as-prepared, thermal and photo annealed thin films exhibit reverse saturable absorption (RSA). The experimental results indicate that both thermal and photo annealing can be efficiently used to enhance the nonlinear absorption coefficient compared to as-prepared sample. We further demonstrate that beta value of thermally annealed and as-prepared samples increase significantly at higher intensities. On the contrary, beta for photo annealed sample does not exhibit appreciable changes against the intensity variation.

preprint2013arXiv

In-Plane Magnetic Field Tolerance of a Dispersive Aluminum Nanobridge SQUID Magnetometer

We characterize the flux sensitivity of a dispersive 3D aluminum nanobridge SQUID magnetometer as a function of applied in-plane magnetic field. In zero field, we observe an effective flux noise of 17 n$Φ_0$/Hz$^{1/2}$ with 25 MHz of bandwidth. Flux noise increased by less than a factor of three with parallel magnetic fields up to 61 mT. Operation in higher fields may be possible by decreasing the dimensions of the shunt capacitor in the magnetometer circuit. These devices are thus well suited for observing high-speed dynamics in nanoscale magnets, even in the presence of moderate bias magnetic fields.

preprint2013arXiv

Influence of excitation frequency on Raman modes of In1-xGaxN thin films

Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity of various Raman modes. For those In1-xGaxN alloys whose bandgap energy is close to the red laser, a huge enhancement in the intensities of A1(LO) mode and its 2A1(LO) replica is observed when excited with red laser as compared to the green laser excitation. We found that the energies of longitudinal optical modes (A1 (LO) and 2A1 (LO)) vary nonlinearly unlike the E2 mode with increasing Ga atomic fraction. A Raman mode ~ 540 cm-1 was observed in all In1-xGaxN films with low energy red laser excitation but was absent with green laser excitation. We attribute this mode to A1(TO) mode of the underneath GaN buffer layer.

preprint2012arXiv

Quantum feedback control of a superconducting qubit: Persistent Rabi oscillations

The act of measurement bridges the quantum and classical worlds by projecting a superposition of possible states into a single, albeit probabilistic, outcome. The time-scale of this "instantaneous" process can be stretched using weak measurements so that it takes the form of a gradual random walk towards a final state. Remarkably, the interim measurement record is sufficient to continuously track and steer the quantum state using feedback. We monitor the dynamics of a resonantly driven quantum two-level system -- a superconducting quantum bit --using a near-noiseless parametric amplifier. The high-fidelity measurement output is used to actively stabilize the phase of Rabi oscillations, enabling them to persist indefinitely. This new functionality shows promise for fighting decoherence and defines a path for continuous quantum error correction.

preprint2008arXiv

Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.