Researcher profile

R. Islam

R. Islam contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Integration and Packaging

Vertically integrated (3D) combinations of sensors and electronics provide the ability to fabricate small, fine pitch pixels with very small total capacitance monolithically integrated with complex circuitry. The small capacitance, enabled by the fine pixel pitch and low interconnect capacitance available in 3D hybrid bonding, provides excellent signal/noise with moderate power. This combination enables fabrication of integrated sensors and electronics with both excellent position and time resolution. In this white paper a discussion will be presented on 3D integration advantages, ongoing projects and prospects in high energy physics and beyond.

preprint2021arXiv

A new approach to achieving high granularity for silicon diode detectors with impact ionization gain

Low Gain Avalanche Diodes (LGADs) are thin (20-50 $μm$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the millimeter scale due to the need to include protection structures at the boundaries of the readout pads to avoid premature breakdown due to large local electric fields. In this paper we present a new approach -- the Deep-Junction LGAD (DJ-LGAD) -- that decouples the high-field gain region from the readout plane. This approach is expected to improve the achievable LGAD granularity to the tens-of-micron scale while maintaining direct charge collection on the segmented electrodes.