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Researcher profile

R. G. Mani

R. G. Mani contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

12 published item(s)

preprint2016arXiv

Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory

We present an experimental study of the microwave power and the linear polarization angle dependence of the microwave-induced magnetoresistance oscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system. Experimental results show the sinusoidal dependence of the oscillatory magnetoresistance extrema as a function of the polarization angle. Yet, as the microwave power increases, the angular dependence includes additional harmonic content, and it begins to resemble the absolute value of the cosine function. We present a theory to explain such peculiar behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3

This study examines the magnetotransport response observed in flakes of the 3D topological insulator (TI) Bi2Te3, including indium superconducting electrodes, and demonstrates two critical transitions in the magnetoresistive response with decreasing temperatures below T = 3.4K. The first transition is attributed to superconductivity in the indium electrodes, and the second transition, with a critical field exceeding the transition field of indium, is attributed to a proximity effect at the 2D planar interface of this hybrid TI/superconductor structure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices

We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium temperatures. The diagonal resistance was measured with the magnetic field fixed at the extrema of the radiation-induced magnetoresistance oscillations, as the microwave power was varied at a number of microwave polarization angles. The results indicate a nonlinear relation between the oscillatory peak or valley magnetoresistance and the microwave power, as well as a cosine square relation between the oscillatory peak or valley magnetoresistance and the microwave polarization angle. The main features are briefly compared with the predictions of existing models.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power

We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. Diagonal resistance $R_{xx}$ was measured at fixed magnetic fields corresponding to the photo-excited oscillatory extrema of $R_{xx}$ as a function of both the microwave power, $P$, and the linear polarization angle, $θ$. Color contour plots of such measurements demonstrate the evolution of the $R_{xx}$ versus $θ$ line shape with increasing microwave power. We report that the non-linear power dependence of the amplitude of the radiation-induced magnetoresistance oscillations distorts the cosine-square relation between $R_{xx}$ and $θ$ at high power.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation

Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking- property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic electronic state is not yet fully understood since it is rarely encountered in experiment. The microwave-radiation-induced zero-resistance state in the high mobility GaAs/AlGaAs 2D electron system is believed to be an example where negative magneto-conductivity/resistivity is responsible for the observed phenomena. Here, we examine the magneto-transport characteristics of this negative conductivity/resistivity state in the microwave photo-excited two-dimensional electron system (2DES) through a numerical solution of the associated boundary value problem. The results suggest, surprisingly, that a bare negative diagonal conductivity/resistivity state in the 2DES under photo-excitation should yield a positive diagonal resistance with a concomitant sign reversal in the Hall voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations

Light-matter coupling is investigated by rotating, by an angle θ, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a strong sinusoidal variation in the diagonal resistance R_{xx} vs. θat the oscillatory extrema, indicating a linear polarization sensitivity in the microwave radiation-induced magnetoresistance oscillations. Surprisingly, the phase shift θ_{0} for maximal oscillatory R_{xx} response under photoexcitation appears dependent upon the radiation-frequency f, the extremum in question, and the magnetic field orientation or sgn(B).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitudes of the magnetoresistance oscillations are remarkably responsive to the relative orientation between the microwave antenna and the current-axis in the specimen. The results suggest a striking linear-polarization-sensitivity in the radiation-induced magnetoresistance oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the detection, characterization, and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical-response and dual microwave-induced resonances in the dc-resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time, and the sub-lattice degeneracy-splitting at zero-magnetic-field.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microwave-induced electron heating in the regime of radiation-induced magnetoresistance oscillations

We examine the influence of microwave photoexcitation on the amplitude of Shubnikov-de Haas (SdH) oscillations in a two dimensional GaAs/AlGaAs electron system in a regime where the cyclotron frequency, $ω_{c}$, and the microwave angular frequency, $ω$, satisfy $2 ω\le ω_{c} \le 3.5 ω$. A SdH lineshape analysis indicates that increasing the incident microwave power has a weak effect on the amplitude of the SdH oscillations, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photoexcitation, in good agreement with theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations

We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider's group, compare their characteristics with similar oscillations in V. Umansky's material, and describe the lineshape variation vs. the radiation power, $P$, in the two systems. We find that the radiation-induced oscillatory $ΔR_{xx}$, in both materials, can be described by $ΔR_{xx} = -A exp(-λ/B)sin(2 πF/B)$, where $A$ is the amplitude, $λ$ is the damping parameter, and $F$ is the oscillation frequency. Both $λ$ and $F$ turn out to be insensitive to $P$. On the other hand, $A$ grows nonlinearly with $P$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Sub-linear radiation power dependence of photo-excited resistance oscillations in two-dimensional electron systems

We find that the amplitude of the $R_{xx}$ radiation-induced magnetoresistance oscillations in GaAs/AlGaAs system grows nonlinearly as $A \propto P^α$ where $A$ is the amplitude and the exponent $α< 1$. %, with $α\rightarrow 1/2$ in %the low temperature limit. This striking result can be explained with the radiation-driven electron orbits model, which suggests that the amplitude of resistance oscillations depends linearly on the radiation electric field, and therefore on the square root of the power, $P$. We also study how this sub-linear power law varies with lattice temperature and radiation frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transport study of Berry&#39;s phase, the resistivity rule, and quantum Hall effect in graphite

Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry&#39;s phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - ΔR_{xx}$. This feature is consistent with the observed relative phases of the oscillatory $R_{xx}$ and $R_{xy}$.

0 citations0 reviewsNo code linkedOpen access