Researcher profile

A. N. Ramanayaka

A. N. Ramanayaka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

Trust snapshot

Quick read

Trust 19 - Baseline

5works

0followers

3topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2015arXiv

Evidence for universal relationship between the measured 1/f permittivity noise and loss tangent created by tunneling atoms

Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tangent in two film types containing different TS densities. The noise reveals an intrinsic value as well as the crossover to power-saturated noise. The intrinsic $1/f$ noise fits to the temperature dependence $1/T^{1+μ}$ where $0.2\leμ\le0.7$, which is related to previous studies and strongly interacting TS. An analysis of the noise normalized by the loss tangent and temperature is quantitatively identical for two film types, despite a factor of 5 difference in their loss tangent. Following from the broad applicability of the TS model, the data supports a universal relationship for amorphous-solid produced permittivity noise. The quantity of the observed noise particularly supports a recent model in which noise is created by weak TS-TS interactions.

preprint2014arXiv

Superconducting TiN Films Sputtered over a Large Range of Substrate DC Bias

We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting in stoichiometric TiN. Over the range of bias, variations of the stress from slightly tensile to highly compressive were measured and correlated to crystallinity of the (200) growth. The films exhibited highly uniform thickness and resistivity, and show the potential for yielding reproducible low-temperature devices. Finally, coplanar resonators fabricated with the films exhibited high kinetic inductance and quality factor, where the latter was obtained in part from temperature-dependent frequency shifts.

preprint2012arXiv

Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations

Light-matter coupling is investigated by rotating, by an angle θ, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a strong sinusoidal variation in the diagonal resistance R_{xx} vs. θat the oscillatory extrema, indicating a linear polarization sensitivity in the microwave radiation-induced magnetoresistance oscillations. Surprisingly, the phase shift θ_{0} for maximal oscillatory R_{xx} response under photoexcitation appears dependent upon the radiation-frequency f, the extremum in question, and the magnetic field orientation or sgn(B).

preprint2012arXiv

Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitudes of the magnetoresistance oscillations are remarkably responsive to the relative orientation between the microwave antenna and the current-axis in the specimen. The results suggest a striking linear-polarization-sensitivity in the radiation-induced magnetoresistance oscillations.

preprint2011arXiv

Microwave-induced electron heating in the regime of radiation-induced magnetoresistance oscillations

We examine the influence of microwave photoexcitation on the amplitude of Shubnikov-de Haas (SdH) oscillations in a two dimensional GaAs/AlGaAs electron system in a regime where the cyclotron frequency, $ω_{c}$, and the microwave angular frequency, $ω$, satisfy $2 ω\le ω_{c} \le 3.5 ω$. A SdH lineshape analysis indicates that increasing the incident microwave power has a weak effect on the amplitude of the SdH oscillations, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photoexcitation, in good agreement with theoretical predictions.