Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite

preprint2010arXivOpen access

Abstract

Transport measurements indicate strong oscillations in the Hall-,RxyR_{xy}, and the diagonal-, RxxR_{xx}, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting Hg0.8Cd0.2TeHg_{0.8}Cd_{0.2}Te, and some other systems. Finally, we observe the transport data to follow B×dRxy/dB≈−ΔRxxB\times dR_{xy}/dB \approx - ΔR_{xx}. This feature is consistent with the observed relative phases of the oscillatory RxxR_{xx} and RxyR_{xy}.

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