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R. E. Butera

R. E. Butera contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Multiple Andreev Reflection Effects in Asymmetric STM Josephson Junctions

We have examined the electrical behavior of Josephson junctions formed by a scanning tunneling microscope (STM) with a Nb sample and a Nb tip, with normal-state resistances Rn varying between 1 kOhm and 10 MOhm. Current-voltage characteristics were obtained as a function of Rn by varying the distance between the tip and sample at temperatures of 50 mK and 1.5 K. Rn decreases as the tip-sample separation is reduced, and the junction evolves from a phase-diffusion regime to an underdamped small junction regime, and then to a point contact regime. The subgap structure exhibits pronounced multiple Andreev reflection (MAR) features whose amplitudes and onset energies depend sensitively on junction transparency and gap asymmetry. To interpret these spectra, we generalize the Averin-Bardas MAR theory to superconductors with unequal gap magnitudes, providing a quantitative model appropriate for asymmetric STM junctions. The resulting fits yield the superconducting gaps of the electrodes, barrier transparency, and number of conduction channels as a function of Rn. Combining this analysis with Josephson junction dynamics, we further account for the observed switching and retrapping currents and the finite resistance of the supercurrent branch. Our results demonstrate that incorporating intrinsic electrode asymmetry is essential for reliably extracting transport parameters in STM-based superconducting weak links.

preprint2021arXiv

Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)

Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leverage the self-assembled c(4x2) structure formed on Br- and I-Si(100) and investigate molecular precursor adsorption into the generated array of single-dimer window (SDW) adsorption sites with density functional theory (DFT). The adsorption of several technologically relevant dopant precursors (PH$_3$, BCl$_3$, AlCl$_3$, GaCl$_3$) into SDWs formed with various resists (H, Cl, Br, I) are explored to identify the effects of steric interactions. PH$_3$ adsorbed without barrier on all resists studied, while BCl$_3$ exhibited the largest adsorption barrier, 0.34 eV, with an I resist. Dense arrays of AlCl$_3$ were found to form within experimentally realizable conditions demonstrating the potential for the proposed use of guided self-assembly for atomically precise fabrication of dopant-based devices.

preprint2021arXiv

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$_2$H$_6$), boron trichloride (BCl$_3$), and aluminum trichloride in both monomer (AlCl$_3$) and dimer forms (Al$_2$Cl$_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

preprint2020arXiv

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.