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Paper detail

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.

preprint2020arXivOpen access
S. TyagiM. DreyerD. BowenD. HinkelP. J. TaylorA. L. FriedmanR. E. ButeraC. KrafftI. Mayergoyz
cond-mat.mes-hall
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S. TyagiM. DreyerD. BowenD. HinkelP. J. TaylorA. L. FriedmanR. E. ButeraC. KrafftI. Mayergoyz

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