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R. Bhandari

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4 publications

preprint2022arXiv

Identification of a potential ultra-low Q value electron capture decay branch in 75^{75}Se via a precise Penning trap measurement of the mass of 75^{75}As

Background: Low energy ββ and electron capture (EC) decays are important systems in neutrino mass determination experiments. An isotope with an ultra-low Q value ββ-decay to an excited state in the daughter with Qes < 1 keV could provide a promising alternative candidate for future experiments. 75^{75}Se EC and 75^{75}Ge ββ-decay represent such candidates, but a more precise determination of the mass of the common daughter, 75^{75}As, is required to evaluate whether their potential decay branches are energetically allowed and ultra-low. Purpose: Perform a precise atomic mass measurement of 75^{75}As and combine the result with the precisely known atomic masses of 75^{75}Se and 75^{75}Ge, along with nuclear energy level data for 75^{75}As to evaluate potential ultra-low Q value decay branches in the EC decay of 75^{75}Se and the ββ-decay of 75^{75}Ge. Method: The LEBIT Penning trap mass spectrometer at the Facility for Rare Isotope Beams was used to perform a high-precision measurement of the atomic mass of 75^{75}As via cyclotron frequency ratio measurements of 75^{75}As+^{+} to a 12^{12}C6+_{6}^{+} reference ion. Results: The 75^{75}As mass excess was determined to be ME(75^{75}As)= -73 035.98(43) keV, from which the ground-state to ground-state Q values for 75^{75}Se EC and 75^{75}Ge ββ-decay were determined to be 866.50(44) keV and 1179.01(44) keV, respectively. These results were compared to energies of excited states in 75^{75}As at 865.4(5) keV and 1172.0(6) keV to determine Q values of 1.1(7) keV and 7.0(7) keV for the potential ultra-low EC and ββ-decay branches of 75^{75}Se and 75^{75}Ge, respectively. Conclusion: The 75^{75}Se EC decay to the 865.4 keV excited state in 75^{75}As is potentially ultra-low with Qes ≈\approx 1 keV. However, a more precise determination of the 865.4(5) keV level in 75^{75}As is required.

preprint2011arXiv

Trapping Surface Electrons on Graphene Layers and Islands

We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.

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