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Researcher profile

R. Batabyal

R. Batabyal contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

3 published item(s)

preprint2014arXiv

Evolution of Fermi Level State Density in Ultrathin Films Near the Two Dimensional Limit: Experiment and Theory

Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theory as well as our density functional theory (DFT) calculations. DFT results also show that in the proximity of the interface the DOS values of the film and the substrate are mutually affected by each other.

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preprint2013arXiv

Crossover regimes in lower dimensional structures

Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of states (DOS) at Fermi level (Ef) keeps on changing as the size of the system changes. DOS at Ef determines many properties of materials, such as electronic specific heat, spin susceptibility etc. Keeping the importance of DOS at Ef in mind, we determine their values and other details of electronic structure of lower dimensional structures of metals, in the 0-D to 1-D, 1-D to 2-D, 2-D to 3-D, 0-D to 2-D, 0-D to 3-Dand 1-D to 3-Dcrossover regimes, in a simple free electron model. We compare our results with analytical theory and experimental results, wherever available. We also present some results obtained by scanning tunneling spectroscopy measurements on Ag islands on Si(111) evolving from a 0-D to a 2-D structure. This simple model is quite useful in understanding lower dimensional structures in the crossover regimes.

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preprint2012arXiv

Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)

We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.

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